Chemical and morphological properties of amorphous silicon oxynitride films deposited by plasma enhanced chemical vapor deposition (2001)
- Authors:
- USP affiliated authors: TABACNIKS, MANFREDO HARRI - IF ; FANTINI, MARCIA CARVALHO DE ABREU - IF ; ALVAREZ, INES PEREYRA DE - EP
- Unidades: IF; EP
- DOI: 10.1016/s0022-3093(01)00608-1
- Subjects: MATÉRIA CONDENSADA (PROPRIEDADES MECÂNICAS); MATERIAIS; MATERIAIS; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Journal of Non-Crystalline Solids
- ISSN: 0022-3093
- Volume/Número/Paginação/Ano: v. 288, n. 1-3, p. 88-95, 2001
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
SCOPEL, Wanderla Luis et al. Chemical and morphological properties of amorphous silicon oxynitride films deposited by plasma enhanced chemical vapor deposition. Journal of Non-Crystalline Solids, v. 288, n. 1-3, p. 88-95, 2001Tradução . . Disponível em: https://doi.org/10.1016/s0022-3093(01)00608-1. Acesso em: 20 abr. 2024. -
APA
Scopel, W. L., Cuzinatto, R. R., Tabacniks, M. H., Fantini, M. C. de A., Alayo Chávez, M. I., & Pereyra, I. (2001). Chemical and morphological properties of amorphous silicon oxynitride films deposited by plasma enhanced chemical vapor deposition. Journal of Non-Crystalline Solids, 288( 1-3), 88-95. doi:10.1016/s0022-3093(01)00608-1 -
NLM
Scopel WL, Cuzinatto RR, Tabacniks MH, Fantini MC de A, Alayo Chávez MI, Pereyra I. Chemical and morphological properties of amorphous silicon oxynitride films deposited by plasma enhanced chemical vapor deposition [Internet]. Journal of Non-Crystalline Solids. 2001 ; 288( 1-3): 88-95.[citado 2024 abr. 20 ] Available from: https://doi.org/10.1016/s0022-3093(01)00608-1 -
Vancouver
Scopel WL, Cuzinatto RR, Tabacniks MH, Fantini MC de A, Alayo Chávez MI, Pereyra I. Chemical and morphological properties of amorphous silicon oxynitride films deposited by plasma enhanced chemical vapor deposition [Internet]. Journal of Non-Crystalline Solids. 2001 ; 288( 1-3): 88-95.[citado 2024 abr. 20 ] Available from: https://doi.org/10.1016/s0022-3093(01)00608-1 - Improvements on the local order of amorphous hydrogenated silicon carbide films
- Thin films of a-'Si IND.1-X''C IND.X':H deposited by PECVD: the r.f. power and 'H IND.2' dilution role
- On the nitrogen and oxygen incorporation in plasma-enhanced chemical vapor deposition (PECVD) SiOxNy films
- Structural investigation of Si-rich amorphous silicon oxynitride films
- Carbon incorporation in 'PECVD''A-SI IND. 1-X''C ind. X': 'H' in the low power density regime
- Analise do espectro vibracional de ligas de silicio-carbono de composicao variavel
- Study of the structural properties of the PECVD SiOxNy dielectric layers obtained with different RF powers by XANES and EXAFS analysis
- Nano-crystalline "Si IND.1-x" "C IND.x" :H thin films deposited by PECVD for SiC-on-insulator application
- Control of the refractive index in PECVD SiOxNy films
- SAXS de filmes finos homogêneos de a-SiC:H
Informações sobre o DOI: 10.1016/s0022-3093(01)00608-1 (Fonte: oaDOI API)
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
