A physically-based continuous model for graded-channel SOI MOSFET (2002)
Source: Microelectronics Technology and Devices SBMICRO 2002. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
ABNT
PAVANELLO, Marcelo Antonio et al. A physically-based continuous model for graded-channel SOI MOSFET. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 09 out. 2024.APA
Pavanello, M. A., Iniguez, B., Martino, J. A., & Flandre, D. (2002). A physically-based continuous model for graded-channel SOI MOSFET. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.NLM
Pavanello MA, Iniguez B, Martino JA, Flandre D. A physically-based continuous model for graded-channel SOI MOSFET. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2024 out. 09 ]Vancouver
Pavanello MA, Iniguez B, Martino JA, Flandre D. A physically-based continuous model for graded-channel SOI MOSFET. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2024 out. 09 ]