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Trabalho de evento
An improved current model in saturation for trapezoidal finfets (2008)
Martins, Gustavo; Giacomini, Renato Camargo; Martino, João Antonio (orient.)
Source: SBMICRO 2008: Anais. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MARTINS, Gustavo e GIACOMINI, Renato Camargo. An improved current model in saturation for trapezoidal finfets. 2008, Anais.. Pennington: The Electrochemical Society, 2008. . Acesso em: 13 nov. 2024.
APA
Martins, G., & Giacomini, R. C. (2008). An improved current model in saturation for trapezoidal finfets. In SBMICRO 2008: Anais. Pennington: The Electrochemical Society.
NLM
Martins G, Giacomini RC. An improved current model in saturation for trapezoidal finfets. SBMICRO 2008: Anais. 2008 ;[citado 2024 nov. 13 ]
Vancouver
Martins G, Giacomini RC. An improved current model in saturation for trapezoidal finfets. SBMICRO 2008: Anais. 2008 ;[citado 2024 nov. 13 ]
Trabalho de evento
Sidewall angle influence on the finFET analog parameters (2007)
Giacomini, Renato Camargo; Martino, João Antonio ; Pavanello, Marcelo Antonio
Source: SBMicro 2007. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GIACOMINI, Renato Camargo e MARTINO, João Antonio e PAVANELLO, Marcelo Antonio. Sidewall angle influence on the finFET analog parameters. 2007, Anais.. Pennington: The Electrochemical Society, 2007. . Acesso em: 13 nov. 2024.
APA
Giacomini, R. C., Martino, J. A., & Pavanello, M. A. (2007). Sidewall angle influence on the finFET analog parameters. In SBMicro 2007. Pennington: The Electrochemical Society.
NLM
Giacomini RC, Martino JA, Pavanello MA. Sidewall angle influence on the finFET analog parameters. SBMicro 2007. 2007 ;[citado 2024 nov. 13 ]
Vancouver
Giacomini RC, Martino JA, Pavanello MA. Sidewall angle influence on the finFET analog parameters. SBMicro 2007. 2007 ;[citado 2024 nov. 13 ]
Trabalho de evento
A simple method to model nonrectangular-gate layout in SOI MOSFETs (2005)
Giacomini, Renato Camargo; Martino, João Antonio
Source: Microelectronics Technology and Devices SBMICRO 2005. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GIACOMINI, Renato Camargo e MARTINO, João Antonio. A simple method to model nonrectangular-gate layout in SOI MOSFETs. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 13 nov. 2024.
APA
Giacomini, R. C., & Martino, J. A. (2005). A simple method to model nonrectangular-gate layout in SOI MOSFETs. In Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society.
NLM
Giacomini RC, Martino JA. A simple method to model nonrectangular-gate layout in SOI MOSFETs. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2024 nov. 13 ]
Vancouver
Giacomini RC, Martino JA. A simple method to model nonrectangular-gate layout in SOI MOSFETs. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2024 nov. 13 ]
Trabalho de evento
An improved model for the triangular SOI misalignment test structure (2004)
Giacomini, Renato Camargo; Martino, João Antonio
Source: Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Conference titles: Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Subjects: MICROELETRÔNICA, ELETROQUÍMICA, CIRCUITOS INTEGRADOS MOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GIACOMINI, Renato Camargo e MARTINO, João Antonio. An improved model for the triangular SOI misalignment test structure. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 13 nov. 2024.
APA
Giacomini, R. C., & Martino, J. A. (2004). An improved model for the triangular SOI misalignment test structure. In Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Pennington: The Electrochemical Society.
NLM
Giacomini RC, Martino JA. An improved model for the triangular SOI misalignment test structure. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2024 nov. 13 ]
Vancouver
Giacomini RC, Martino JA. An improved model for the triangular SOI misalignment test structure. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2024 nov. 13 ]
Trabalho de evento
A simple model for a new SOI MOSFET with asymmetric trapezoidal gate (2003)
Giacomini, Renato Camargo; Martino, João Antonio
Source: Proceedings. Conference titles: Workshop IBERSHIP. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GIACOMINI, Renato Camargo e MARTINO, João Antonio. A simple model for a new SOI MOSFET with asymmetric trapezoidal gate. 2003, Anais.. Havana: Escola Politécnica, Universidade de São Paulo, 2003. . Acesso em: 13 nov. 2024.
APA
Giacomini, R. C., & Martino, J. A. (2003). A simple model for a new SOI MOSFET with asymmetric trapezoidal gate. In Proceedings. Havana: Escola Politécnica, Universidade de São Paulo.
NLM
Giacomini RC, Martino JA. A simple model for a new SOI MOSFET with asymmetric trapezoidal gate. Proceedings. 2003 ;[citado 2024 nov. 13 ]
Vancouver
Giacomini RC, Martino JA. A simple model for a new SOI MOSFET with asymmetric trapezoidal gate. Proceedings. 2003 ;[citado 2024 nov. 13 ]
Parte de monografia/livro
An improved current model for edgeless SOI MOSFETs (2003)
Giacomini, Renato Camargo; Martino, João Antonio
Source: Microelectronic Technology and Devices SBMicro 2003. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GIACOMINI, Renato Camargo e MARTINO, João Antonio. An improved current model for edgeless SOI MOSFETs. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 13 nov. 2024.
APA
Giacomini, R. C., & Martino, J. A. (2003). An improved current model for edgeless SOI MOSFETs. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Giacomini RC, Martino JA. An improved current model for edgeless SOI MOSFETs. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 nov. 13 ]
Vancouver
Giacomini RC, Martino JA. An improved current model for edgeless SOI MOSFETs. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 nov. 13 ]

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