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Artigo de periodico
Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate (2006)
Pacheco-Salazar, D G; Leite, J. R.; Cerdeira, F; Meneses, E A; Li, S F; As, D J; Lischka, K
Source: Semiconductor Science and Technology. Unidade: IF
Subjects: MATÉRIA CONDENSADA, ESPALHAMENTO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PACHECO-SALAZAR, D G et al. Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate. Semiconductor Science and Technology, v. 21, n. 7, p. 846-851, 2006Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/21/7/003. Acesso em: 10 out. 2024.
APA
Pacheco-Salazar, D. G., Leite, J. R., Cerdeira, F., Meneses, E. A., Li, S. F., As, D. J., & Lischka, K. (2006). Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate. Semiconductor Science and Technology, 21( 7), 846-851. doi:10.1088/0268-1242/21/7/003
NLM
Pacheco-Salazar DG, Leite JR, Cerdeira F, Meneses EA, Li SF, As DJ, Lischka K. Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate [Internet]. Semiconductor Science and Technology. 2006 ; 21( 7): 846-851.[citado 2024 out. 10 ] Available from: https://doi.org/10.1088/0268-1242/21/7/003
Vancouver
Pacheco-Salazar DG, Leite JR, Cerdeira F, Meneses EA, Li SF, As DJ, Lischka K. Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate [Internet]. Semiconductor Science and Technology. 2006 ; 21( 7): 846-851.[citado 2024 out. 10 ] Available from: https://doi.org/10.1088/0268-1242/21/7/003
Artigo de periodico
Micro-raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate (1999)
Tabata, A.; Lima, A. P.; Leite, J. R.; Lemos, V.; Schikora, D.; Schottker, B.; Kohler, U.; As, D. J.; Lischka, K.
Source: Semiconductor Science and Technology. Unidade: IF
Assunto: ENGENHARIA MECÂNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TABATA, A. et al. Micro-raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate. Semiconductor Science and Technology, v. 14, n. 4, p. 318-322, 1999Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/14/4/005. Acesso em: 10 out. 2024.
APA
Tabata, A., Lima, A. P., Leite, J. R., Lemos, V., Schikora, D., Schottker, B., et al. (1999). Micro-raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate. Semiconductor Science and Technology, 14( 4), 318-322. doi:10.1088/0268-1242/14/4/005
NLM
Tabata A, Lima AP, Leite JR, Lemos V, Schikora D, Schottker B, Kohler U, As DJ, Lischka K. Micro-raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate [Internet]. Semiconductor Science and Technology. 1999 ; 14( 4): 318-322.[citado 2024 out. 10 ] Available from: https://doi.org/10.1088/0268-1242/14/4/005
Vancouver
Tabata A, Lima AP, Leite JR, Lemos V, Schikora D, Schottker B, Kohler U, As DJ, Lischka K. Micro-raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate [Internet]. Semiconductor Science and Technology. 1999 ; 14( 4): 318-322.[citado 2024 out. 10 ] Available from: https://doi.org/10.1088/0268-1242/14/4/005
Artigo de periodico
Miniband structures and effective masses of n-type 'delta'-doping superlattices in 'GaN' (1998)
Rodrigues, S C P; Rosa, A L; Scolfaro, Luísa Maria Ribeiro; Beliaev, Dmitri; Leite, J. R.; Enderlein, R; Alves, J L A
Source: Semiconductor Science and Technology. Unidade: IF
Assunto: ENGENHARIA MECÂNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
RODRIGUES, S C P et al. Miniband structures and effective masses of n-type 'delta'-doping superlattices in 'GaN'. Semiconductor Science and Technology, v. 13, p. 981-988, 1998Tradução . . Acesso em: 10 out. 2024.
APA
Rodrigues, S. C. P., Rosa, A. L., Scolfaro, L. M. R., Beliaev, D., Leite, J. R., Enderlein, R., & Alves, J. L. A. (1998). Miniband structures and effective masses of n-type 'delta'-doping superlattices in 'GaN'. Semiconductor Science and Technology, 13, 981-988.
NLM
Rodrigues SCP, Rosa AL, Scolfaro LMR, Beliaev D, Leite JR, Enderlein R, Alves JLA. Miniband structures and effective masses of n-type 'delta'-doping superlattices in 'GaN'. Semiconductor Science and Technology. 1998 ; 13 981-988.[citado 2024 out. 10 ]
Vancouver
Rodrigues SCP, Rosa AL, Scolfaro LMR, Beliaev D, Leite JR, Enderlein R, Alves JLA. Miniband structures and effective masses of n-type 'delta'-doping superlattices in 'GaN'. Semiconductor Science and Technology. 1998 ; 13 981-988.[citado 2024 out. 10 ]
Artigo de periodico
Photoreflectance spectra from GaAs HEMT structures reinvestigated: solution of an old controversy (1998)
Soares, J A N T; Enderlein, R; Beliaev, D; Leite, J. R.; Saito, M
Source: Semiconductor Science and Technology. Unidade: IF
Subjects: ENGENHARIA MECÂNICA, MATÉRIA CONDENSADA, MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SOARES, J A N T et al. Photoreflectance spectra from GaAs HEMT structures reinvestigated: solution of an old controversy. Semiconductor Science and Technology, v. 13, n. 12, p. 1418-1425, 1998Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/13/12/015. Acesso em: 10 out. 2024.
APA
Soares, J. A. N. T., Enderlein, R., Beliaev, D., Leite, J. R., & Saito, M. (1998). Photoreflectance spectra from GaAs HEMT structures reinvestigated: solution of an old controversy. Semiconductor Science and Technology, 13( 12), 1418-1425. doi:10.1088/0268-1242/13/12/015
NLM
Soares JANT, Enderlein R, Beliaev D, Leite JR, Saito M. Photoreflectance spectra from GaAs HEMT structures reinvestigated: solution of an old controversy [Internet]. Semiconductor Science and Technology. 1998 ; 13( 12): 1418-1425.[citado 2024 out. 10 ] Available from: https://doi.org/10.1088/0268-1242/13/12/015
Vancouver
Soares JANT, Enderlein R, Beliaev D, Leite JR, Saito M. Photoreflectance spectra from GaAs HEMT structures reinvestigated: solution of an old controversy [Internet]. Semiconductor Science and Technology. 1998 ; 13( 12): 1418-1425.[citado 2024 out. 10 ] Available from: https://doi.org/10.1088/0268-1242/13/12/015
Artigo de periodico
New theoretical model for optical transitions in the photoreflectance spectrum from 'GHAMA'-doped structures (1993)
Beliaev, D; Scolfaro, L M R; Leite, J. R.
Source: Semiconductor Science and Technology. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BELIAEV, D e SCOLFARO, L M R e LEITE, J. R. New theoretical model for optical transitions in the photoreflectance spectrum from 'GHAMA'-doped structures. Semiconductor Science and Technology, v. 8 , p. 1479, 1993Tradução . . Acesso em: 10 out. 2024.
APA
Beliaev, D., Scolfaro, L. M. R., & Leite, J. R. (1993). New theoretical model for optical transitions in the photoreflectance spectrum from 'GHAMA'-doped structures. Semiconductor Science and Technology, 8 , 1479.
NLM
Beliaev D, Scolfaro LMR, Leite JR. New theoretical model for optical transitions in the photoreflectance spectrum from 'GHAMA'-doped structures. Semiconductor Science and Technology. 1993 ;8 1479.[citado 2024 out. 10 ]
Vancouver
Beliaev D, Scolfaro LMR, Leite JR. New theoretical model for optical transitions in the photoreflectance spectrum from 'GHAMA'-doped structures. Semiconductor Science and Technology. 1993 ;8 1479.[citado 2024 out. 10 ]

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