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Trabalho de evento-anais periodico
Trends on 3d transition metal impurities in diamond (2009)
Assali, L. V. C. ; Machado, Wanda Valle Marcondes; Justo Filho, João Francisco
Source: Physica B: Condensed Matter. Conference titles: International Conference on Defects in Semiconductors. Unidades: IF, EP
Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA
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ASSALI, L. V. C. e MACHADO, Wanda Valle Marcondes e JUSTO FILHO, João Francisco. Trends on 3d transition metal impurities in diamond. Physica B: Condensed Matter. Amsterdam: Elsevier Science. Disponível em: https://doi.org/10.1016/j.physb.2009.08.109. Acesso em: 04 nov. 2024. , 2009
APA
Assali, L. V. C., Machado, W. V. M., & Justo Filho, J. F. (2009). Trends on 3d transition metal impurities in diamond. Physica B: Condensed Matter. Amsterdam: Elsevier Science. doi:10.1016/j.physb.2009.08.109
NLM
Assali LVC, Machado WVM, Justo Filho JF. Trends on 3d transition metal impurities in diamond [Internet]. Physica B: Condensed Matter. 2009 ; 404( 23-24): 4515-4517.[citado 2024 nov. 04 ] Available from: https://doi.org/10.1016/j.physb.2009.08.109
Vancouver
Assali LVC, Machado WVM, Justo Filho JF. Trends on 3d transition metal impurities in diamond [Internet]. Physica B: Condensed Matter. 2009 ; 404( 23-24): 4515-4517.[citado 2024 nov. 04 ] Available from: https://doi.org/10.1016/j.physb.2009.08.109
Trabalho de evento-anais periodico
A model for the stabilization of atomic hydrogen centers in borate glasses (2009)
Pontuschka, W. M.; Isotani, Sadao
Source: Physica B: Condensed Matter. Conference titles: International Conference on Defects in Semiconductors. Unidade: IF
Subjects: SEMICONDUTORES, RESSONÂNCIA PARAMAGNÉTICA DE SPIN
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PONTUSCHKA, W. M. e ISOTANI, Sadao. A model for the stabilization of atomic hydrogen centers in borate glasses. Physica B: Condensed Matter. Amsterdam: Elsevier Science. Disponível em: http://www.sciencedirect.com/science/journal/09214526. Acesso em: 04 nov. 2024. , 2009
APA
Pontuschka, W. M., & Isotani, S. (2009). A model for the stabilization of atomic hydrogen centers in borate glasses. Physica B: Condensed Matter. Amsterdam: Elsevier Science. Recuperado de http://www.sciencedirect.com/science/journal/09214526
NLM
Pontuschka WM, Isotani S. A model for the stabilization of atomic hydrogen centers in borate glasses [Internet]. Physica B: Condensed Matter. 2009 ; 404( 21): 4312-4317.[citado 2024 nov. 04 ] Available from: http://www.sciencedirect.com/science/journal/09214526
Vancouver
Pontuschka WM, Isotani S. A model for the stabilization of atomic hydrogen centers in borate glasses [Internet]. Physica B: Condensed Matter. 2009 ; 404( 21): 4312-4317.[citado 2024 nov. 04 ] Available from: http://www.sciencedirect.com/science/journal/09214526
Trabalho de evento-resumo
Electronic properties of organic polymer films (2003)
Ferretti, A; Bussi, G; Ruini, A; Molinari, E; Caldas, Marília Junqueira
Source: Book of Abstracts I (Oral). Conference titles: International Conference on Defects in Semiconductors. Unidade: IF
Subjects: SEMICONDUTORES, LUMINESCÊNCIA, POLÍMEROS (MATERIAIS)
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FERRETTI, A et al. Electronic properties of organic polymer films. 2003, Anais.. Amsterdam: Elsevier Science, 2003. . Acesso em: 04 nov. 2024.
APA
Ferretti, A., Bussi, G., Ruini, A., Molinari, E., & Caldas, M. J. (2003). Electronic properties of organic polymer films. In Book of Abstracts I (Oral). Amsterdam: Elsevier Science.
NLM
Ferretti A, Bussi G, Ruini A, Molinari E, Caldas MJ. Electronic properties of organic polymer films. Book of Abstracts I (Oral). 2003 ;[citado 2024 nov. 04 ]
Vancouver
Ferretti A, Bussi G, Ruini A, Molinari E, Caldas MJ. Electronic properties of organic polymer films. Book of Abstracts I (Oral). 2003 ;[citado 2024 nov. 04 ]
Trabalho de evento-resumo
Fe and Mn atoms interacting with carbon nanotubes (2003)
Fagan, Solange B; Mota, R; Silva, Antonio Jose Roque da; Fazzio, Adalberto
Source: Book of Abstracts I (Oral). Conference titles: International Conference on Defects in Semiconductors. Unidade: IF
Subjects: SEMICONDUTORES, NANOTECNOLOGIA
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FAGAN, Solange B et al. Fe and Mn atoms interacting with carbon nanotubes. 2003, Anais.. Amsterdam: Elsevier Science, 2003. . Acesso em: 04 nov. 2024.
APA
Fagan, S. B., Mota, R., Silva, A. J. R. da, & Fazzio, A. (2003). Fe and Mn atoms interacting with carbon nanotubes. In Book of Abstracts I (Oral). Amsterdam: Elsevier Science.
NLM
Fagan SB, Mota R, Silva AJR da, Fazzio A. Fe and Mn atoms interacting with carbon nanotubes. Book of Abstracts I (Oral). 2003 ;[citado 2024 nov. 04 ]
Vancouver
Fagan SB, Mota R, Silva AJR da, Fazzio A. Fe and Mn atoms interacting with carbon nanotubes. Book of Abstracts I (Oral). 2003 ;[citado 2024 nov. 04 ]
Trabalho de evento-resumo
New opportunities in X-ray characterization of semiconductors (2003)
Morelhão, Sérgio Luiz
Source: Book of Abstracts. Conference titles: International Conference on Defects in Semiconductors. Unidade: IF
Subjects: SEMICONDUTORES, RAIOS X
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MORELHÃO, Sérgio Luiz. New opportunities in X-ray characterization of semiconductors. 2003, Anais.. Amsterdam: Elsevier Science, 2003. . Acesso em: 04 nov. 2024.
APA
Morelhão, S. L. (2003). New opportunities in X-ray characterization of semiconductors. In Book of Abstracts. Amsterdam: Elsevier Science.
NLM
Morelhão SL. New opportunities in X-ray characterization of semiconductors. Book of Abstracts. 2003 ;[citado 2024 nov. 04 ]
Vancouver
Morelhão SL. New opportunities in X-ray characterization of semiconductors. Book of Abstracts. 2003 ;[citado 2024 nov. 04 ]
Trabalho de evento-resumo
A comparative study on titanium impurities in silicon, diamond and silicon carbide (2003)
Assali, L. V. C. ; Machado, Wanda Valle Marcondes; Justo Filho, João Francisco
Source: Book of Abstracts. Conference titles: International Conference on Defects in Semiconductors. Unidades: IF, EP
Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA, PROPRIEDADES DOS MATERIAIS
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ASSALI, L. V. C. e MACHADO, Wanda Valle Marcondes e JUSTO FILHO, João Francisco. A comparative study on titanium impurities in silicon, diamond and silicon carbide. 2003, Anais.. Amsterdam: Elsevier Science, 2003. . Acesso em: 04 nov. 2024.
APA
Assali, L. V. C., Machado, W. V. M., & Justo Filho, J. F. (2003). A comparative study on titanium impurities in silicon, diamond and silicon carbide. In Book of Abstracts. Amsterdam: Elsevier Science.
NLM
Assali LVC, Machado WVM, Justo Filho JF. A comparative study on titanium impurities in silicon, diamond and silicon carbide. Book of Abstracts. 2003 ;[citado 2024 nov. 04 ]
Vancouver
Assali LVC, Machado WVM, Justo Filho JF. A comparative study on titanium impurities in silicon, diamond and silicon carbide. Book of Abstracts. 2003 ;[citado 2024 nov. 04 ]
Trabalho de evento-resumo
Heavy- and light-hole subband anti-crossing in GaAs/AlGaAs quantum wells under tensile biaxial strain (2003)
Gomes, Paulo F; Godoy, M P F; Nakaema, M K K; Iikawa, F; Lamas, T. E.; Quivy, A. A.
Source: Book of Abstracts. Conference titles: International Conference on Defects in Semiconductors. Unidade: IF
Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA
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GOMES, Paulo F et al. Heavy- and light-hole subband anti-crossing in GaAs/AlGaAs quantum wells under tensile biaxial strain. 2003, Anais.. Amsterdam: Elsevier Science, 2003. . Acesso em: 04 nov. 2024.
APA
Gomes, P. F., Godoy, M. P. F., Nakaema, M. K. K., Iikawa, F., Lamas, T. E., & Quivy, A. A. (2003). Heavy- and light-hole subband anti-crossing in GaAs/AlGaAs quantum wells under tensile biaxial strain. In Book of Abstracts. Amsterdam: Elsevier Science.
NLM
Gomes PF, Godoy MPF, Nakaema MKK, Iikawa F, Lamas TE, Quivy AA. Heavy- and light-hole subband anti-crossing in GaAs/AlGaAs quantum wells under tensile biaxial strain. Book of Abstracts. 2003 ;[citado 2024 nov. 04 ]
Vancouver
Gomes PF, Godoy MPF, Nakaema MKK, Iikawa F, Lamas TE, Quivy AA. Heavy- and light-hole subband anti-crossing in GaAs/AlGaAs quantum wells under tensile biaxial strain. Book of Abstracts. 2003 ;[citado 2024 nov. 04 ]
Trabalho de evento-resumo
Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN (2003)
Alves, H W Leite; Alves, J L A; Santos, A M; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.
Source: Book of Abstracts. Conference titles: International Conference on Defects in Semiconductors. Unidade: IF
Assunto: SEMICONDUTORES
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ALVES, H W Leite et al. Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN. 2003, Anais.. Amsterdam: Elsevier Science, 2003. . Acesso em: 04 nov. 2024.
APA
Alves, H. W. L., Alves, J. L. A., Santos, A. M., Scolfaro, L. M. R., & Leite, J. R. (2003). Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN. In Book of Abstracts. Amsterdam: Elsevier Science.
NLM
Alves HWL, Alves JLA, Santos AM, Scolfaro LMR, Leite JR. Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN. Book of Abstracts. 2003 ;[citado 2024 nov. 04 ]
Vancouver
Alves HWL, Alves JLA, Santos AM, Scolfaro LMR, Leite JR. Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN. Book of Abstracts. 2003 ;[citado 2024 nov. 04 ]
Trabalho de evento-resumo
Manganese and iron impurities in gallium nitride (2003)
Assali, L. V. C. ; Ayres, F; Machado, Wanda Valle Marcondes; Justo Filho, João Francisco
Source: Book of Abstracts II (POSTER). Conference titles: International Conference on Defects in Semiconductors. Unidades: IF, EP
Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA, PROPRIEDADES DOS MATERIAIS
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ASSALI, L. V. C. et al. Manganese and iron impurities in gallium nitride. 2003, Anais.. Amsterdam: Elsevier Science, 2003. . Acesso em: 04 nov. 2024.
APA
Assali, L. V. C., Ayres, F., Machado, W. V. M., & Justo Filho, J. F. (2003). Manganese and iron impurities in gallium nitride. In Book of Abstracts II (POSTER). Amsterdam: Elsevier Science.
NLM
Assali LVC, Ayres F, Machado WVM, Justo Filho JF. Manganese and iron impurities in gallium nitride. Book of Abstracts II (POSTER). 2003 ;[citado 2024 nov. 04 ]
Vancouver
Assali LVC, Ayres F, Machado WVM, Justo Filho JF. Manganese and iron impurities in gallium nitride. Book of Abstracts II (POSTER). 2003 ;[citado 2024 nov. 04 ]
Trabalho de evento-resumo
Mn impurities in Si: stability on bulk and on surface (2003)
Dalpian, G. M.; Silva, Antonio Jose Roque da; Fazzio, Adalberto
Source: Book of Abstracts II (Poster). Conference titles: International Conference on Defects in Semiconductors. Unidade: IF
Subjects: SEMICONDUTORES, FERROMAGNETISMO
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DALPIAN, G. M. e SILVA, Antonio Jose Roque da e FAZZIO, Adalberto. Mn impurities in Si: stability on bulk and on surface. 2003, Anais.. Amsterdam: Elsevier Science, 2003. . Acesso em: 04 nov. 2024.
APA
Dalpian, G. M., Silva, A. J. R. da, & Fazzio, A. (2003). Mn impurities in Si: stability on bulk and on surface. In Book of Abstracts II (Poster). Amsterdam: Elsevier Science.
NLM
Dalpian GM, Silva AJR da, Fazzio A. Mn impurities in Si: stability on bulk and on surface. Book of Abstracts II (Poster). 2003 ;[citado 2024 nov. 04 ]
Vancouver
Dalpian GM, Silva AJR da, Fazzio A. Mn impurities in Si: stability on bulk and on surface. Book of Abstracts II (Poster). 2003 ;[citado 2024 nov. 04 ]
Trabalho de evento-resumo
Structural and electronic properties of Ni-related active centers in diamond (2003)
Larico, R; Justo Filho, João Francisco ; Machado, Wanda Valle Marcondes; Assali, L. V. C.
Source: Book of Abstracts. Conference titles: International Conference on Defects in Semiconductors. Unidades: EP, IF
Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA, PROPRIEDADES DOS MATERIAIS
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LARICO, R et al. Structural and electronic properties of Ni-related active centers in diamond. 2003, Anais.. Amsterdam: Elsevier Science, 2003. . Acesso em: 04 nov. 2024.
APA
Larico, R., Justo Filho, J. F., Machado, W. V. M., & Assali, L. V. C. (2003). Structural and electronic properties of Ni-related active centers in diamond. In Book of Abstracts. Amsterdam: Elsevier Science.
NLM
Larico R, Justo Filho JF, Machado WVM, Assali LVC. Structural and electronic properties of Ni-related active centers in diamond. Book of Abstracts. 2003 ;[citado 2024 nov. 04 ]
Vancouver
Larico R, Justo Filho JF, Machado WVM, Assali LVC. Structural and electronic properties of Ni-related active centers in diamond. Book of Abstracts. 2003 ;[citado 2024 nov. 04 ]
Trabalho de evento-resumo
Large InAs/GaAs quantum dots optically active in the long-wavelength region (2003)
Silva, M J da; Martini, S; Lamas, T. E.; Quivy, A. A.; Silva, Euzi Conceicao Fernandes da; Leite, J. R.
Source: Book of Abstracts. Conference titles: International Conference on Defects in Semiconductors. Unidade: IF
Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA
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SILVA, M J da et al. Large InAs/GaAs quantum dots optically active in the long-wavelength region. 2003, Anais.. Amsterdam: Elsevier Science, 2003. . Acesso em: 04 nov. 2024.
APA
Silva, M. J. da, Martini, S., Lamas, T. E., Quivy, A. A., Silva, E. C. F. da, & Leite, J. R. (2003). Large InAs/GaAs quantum dots optically active in the long-wavelength region. In Book of Abstracts. Amsterdam: Elsevier Science.
NLM
Silva MJ da, Martini S, Lamas TE, Quivy AA, Silva ECF da, Leite JR. Large InAs/GaAs quantum dots optically active in the long-wavelength region. Book of Abstracts. 2003 ;[citado 2024 nov. 04 ]
Vancouver
Silva MJ da, Martini S, Lamas TE, Quivy AA, Silva ECF da, Leite JR. Large InAs/GaAs quantum dots optically active in the long-wavelength region. Book of Abstracts. 2003 ;[citado 2024 nov. 04 ]
Trabalho de evento-resumo
Electronic and structural properties of intrinsic and extrinsic defects in red mercuric iodide (2003)
Ayres, F; Machado, Wanda Valle Marcondes; Justo Filho, João Francisco ; Assali, L. V. C.
Source: Books of Abstracts II (POSTER). Conference titles: International Conference on Defects in Semiconductors. Unidades: IF, EP
Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA, PROPRIEDADES DOS MATERIAIS
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AYRES, F et al. Electronic and structural properties of intrinsic and extrinsic defects in red mercuric iodide. 2003, Anais.. Amsterdam: Elsevier Science, 2003. . Acesso em: 04 nov. 2024.
APA
Ayres, F., Machado, W. V. M., Justo Filho, J. F., & Assali, L. V. C. (2003). Electronic and structural properties of intrinsic and extrinsic defects in red mercuric iodide. In Books of Abstracts II (POSTER). Amsterdam: Elsevier Science.
NLM
Ayres F, Machado WVM, Justo Filho JF, Assali LVC. Electronic and structural properties of intrinsic and extrinsic defects in red mercuric iodide. Books of Abstracts II (POSTER). 2003 ;[citado 2024 nov. 04 ]
Vancouver
Ayres F, Machado WVM, Justo Filho JF, Assali LVC. Electronic and structural properties of intrinsic and extrinsic defects in red mercuric iodide. Books of Abstracts II (POSTER). 2003 ;[citado 2024 nov. 04 ]
Trabalho de evento-resumo
Raman spectroscopy of n-GaN in cubic phase (2003)
Anjos, Virgílio de Carvalho dos; Bell, M J V; Leite, J. R.
Source: Book of Abstracts. Conference titles: International Conference on Defects in Semiconductors. Unidade: IF
Subjects: SEMICONDUTORES, ESPECTROSCOPIA RAMAN
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ANJOS, Virgílio de Carvalho dos e BELL, M J V e LEITE, J. R. Raman spectroscopy of n-GaN in cubic phase. 2003, Anais.. Amsterdam: Elsevier Science, 2003. . Acesso em: 04 nov. 2024.
APA
Anjos, V. de C. dos, Bell, M. J. V., & Leite, J. R. (2003). Raman spectroscopy of n-GaN in cubic phase. In Book of Abstracts. Amsterdam: Elsevier Science.
NLM
Anjos V de C dos, Bell MJV, Leite JR. Raman spectroscopy of n-GaN in cubic phase. Book of Abstracts. 2003 ;[citado 2024 nov. 04 ]
Vancouver
Anjos V de C dos, Bell MJV, Leite JR. Raman spectroscopy of n-GaN in cubic phase. Book of Abstracts. 2003 ;[citado 2024 nov. 04 ]
Trabalho de evento-resumo
Vacancies in amorphous silicon: a first principles study (2003)
Miranda, C R; Antonelli, A; Silva, Antonio Jose Roque da; Fazzio, Adalberto
Source: Book of Abstracts II (Poster). Conference titles: International Conference on Defects in Semiconductors. Unidade: IF
Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA, PROPRIEDADES DOS MATERIAIS
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ABNT
MIRANDA, C R et al. Vacancies in amorphous silicon: a first principles study. 2003, Anais.. Amsterdam: Elsevier Science, 2003. . Acesso em: 04 nov. 2024.
APA
Miranda, C. R., Antonelli, A., Silva, A. J. R. da, & Fazzio, A. (2003). Vacancies in amorphous silicon: a first principles study. In Book of Abstracts II (Poster). Amsterdam: Elsevier Science.
NLM
Miranda CR, Antonelli A, Silva AJR da, Fazzio A. Vacancies in amorphous silicon: a first principles study. Book of Abstracts II (Poster). 2003 ;[citado 2024 nov. 04 ]
Vancouver
Miranda CR, Antonelli A, Silva AJR da, Fazzio A. Vacancies in amorphous silicon: a first principles study. Book of Abstracts II (Poster). 2003 ;[citado 2024 nov. 04 ]
Trabalho de evento-resumo
The interaction of point defects with a 90 'GRAUS' partial dislocation in Si (2003)
Schmidt, T M; Arantes Junior, Jeverson Teodoro; Fazzio, Adalberto
Source: Book of Abstracts II (Poster). Conference titles: International Conference on Defects in Semiconductors. Unidade: IF
Assunto: SEMICONDUTORES
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SCHMIDT, T M e ARANTES JUNIOR, Jeverson Teodoro e FAZZIO, Adalberto. The interaction of point defects with a 90 'GRAUS' partial dislocation in Si. 2003, Anais.. Amsterdam: Elsevier Science, 2003. . Acesso em: 04 nov. 2024.
APA
Schmidt, T. M., Arantes Junior, J. T., & Fazzio, A. (2003). The interaction of point defects with a 90 'GRAUS' partial dislocation in Si. In Book of Abstracts II (Poster). Amsterdam: Elsevier Science.
NLM
Schmidt TM, Arantes Junior JT, Fazzio A. The interaction of point defects with a 90 'GRAUS' partial dislocation in Si. Book of Abstracts II (Poster). 2003 ;[citado 2024 nov. 04 ]
Vancouver
Schmidt TM, Arantes Junior JT, Fazzio A. The interaction of point defects with a 90 'GRAUS' partial dislocation in Si. Book of Abstracts II (Poster). 2003 ;[citado 2024 nov. 04 ]
Trabalho de evento-anais periodico
EDMR of MEH-PPV LEDs (2001)
Silva, G. B.; Santos, L. F.; Faria, Roberto Mendonça ; Graeff, Carlos Frederico de Oliveira
Source: Physica B. Conference titles: International Conference on Defects in Semiconductors. Unidades: IFSC, FFCLRP
Subjects: FÍSICA DA MATÉRIA CONDENSADA, POLÍMEROS (QUÍMICA ORGÂNICA)
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ABNT
SILVA, G. B. et al. EDMR of MEH-PPV LEDs. Physica B. Amsterdam: Elsevier Science. Disponível em: https://doi.org/10.1016/S0921-4526(01)00859-6. Acesso em: 04 nov. 2024. , 2001
APA
Silva, G. B., Santos, L. F., Faria, R. M., & Graeff, C. F. de O. (2001). EDMR of MEH-PPV LEDs. Physica B. Amsterdam: Elsevier Science. doi:10.1016/S0921-4526(01)00859-6
NLM
Silva GB, Santos LF, Faria RM, Graeff CF de O. EDMR of MEH-PPV LEDs [Internet]. Physica B. 2001 ;308-310 1078-1080.[citado 2024 nov. 04 ] Available from: https://doi.org/10.1016/S0921-4526(01)00859-6
Vancouver
Silva GB, Santos LF, Faria RM, Graeff CF de O. EDMR of MEH-PPV LEDs [Internet]. Physica B. 2001 ;308-310 1078-1080.[citado 2024 nov. 04 ] Available from: https://doi.org/10.1016/S0921-4526(01)00859-6
Trabalho de evento-anais periodico
Plasmon-like oscillations of the electrons localized by the DX centers in doped 'Al IND.x''Ga IND.1-x'As (2001)
Pusep, Yuri A ; Chiquito, A. J.; Fortunato, W.; Galzerani, Jose Carlos
Source: Physica B. Conference titles: International Conference on Defects in Semiconductors. Unidade: IFSC
Assunto: FÍSICA DA MATÉRIA CONDENSADA
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PUSEP, Yuri A et al. Plasmon-like oscillations of the electrons localized by the DX centers in doped 'Al IND.x''Ga IND.1-x'As. Physica B. Amsterdam: Elsevier Science. Disponível em: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=09214526&issue=v308-310inone&article=843_pooteltdcida&form=pdf&file=file.pdf. Acesso em: 04 nov. 2024. , 2001
APA
Pusep, Y. A., Chiquito, A. J., Fortunato, W., & Galzerani, J. C. (2001). Plasmon-like oscillations of the electrons localized by the DX centers in doped 'Al IND.x''Ga IND.1-x'As. Physica B. Amsterdam: Elsevier Science. Recuperado de http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=09214526&issue=v308-310inone&article=843_pooteltdcida&form=pdf&file=file.pdf
NLM
Pusep YA, Chiquito AJ, Fortunato W, Galzerani JC. Plasmon-like oscillations of the electrons localized by the DX centers in doped 'Al IND.x''Ga IND.1-x'As [Internet]. Physica B. 2001 ;308-310 843-845.[citado 2024 nov. 04 ] Available from: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=09214526&issue=v308-310inone&article=843_pooteltdcida&form=pdf&file=file.pdf
Vancouver
Pusep YA, Chiquito AJ, Fortunato W, Galzerani JC. Plasmon-like oscillations of the electrons localized by the DX centers in doped 'Al IND.x''Ga IND.1-x'As [Internet]. Physica B. 2001 ;308-310 843-845.[citado 2024 nov. 04 ] Available from: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=09214526&issue=v308-310inone&article=843_pooteltdcida&form=pdf&file=file.pdf
Trabalho de evento-anais periodico
Raman probing of the wave function of collective excitations in the presence of disorder (2001)
Pusep, Yuri A ; Sokolov, S. S.; Fortunato, W.; Galzerani, Jose Carlos; Leite, José Roberto
Source: Physica B. Conference titles: International Conference on Defects in Semiconductors. Unidades: IFSC, IF
Assunto: FÍSICA DA MATÉRIA CONDENSADA
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ABNT
PUSEP, Yuri A et al. Raman probing of the wave function of collective excitations in the presence of disorder. Physica B. Amsterdam: Elsevier Science. Disponível em: https://doi.org/10.1016/S0921-4526(01)00835-3. Acesso em: 04 nov. 2024. , 2001
APA
Pusep, Y. A., Sokolov, S. S., Fortunato, W., Galzerani, J. C., & Leite, J. R. (2001). Raman probing of the wave function of collective excitations in the presence of disorder. Physica B. Amsterdam: Elsevier Science. doi:10.1016/S0921-4526(01)00835-3
NLM
Pusep YA, Sokolov SS, Fortunato W, Galzerani JC, Leite JR. Raman probing of the wave function of collective excitations in the presence of disorder [Internet]. Physica B. 2001 ;308-310 772-775.[citado 2024 nov. 04 ] Available from: https://doi.org/10.1016/S0921-4526(01)00835-3
Vancouver
Pusep YA, Sokolov SS, Fortunato W, Galzerani JC, Leite JR. Raman probing of the wave function of collective excitations in the presence of disorder [Internet]. Physica B. 2001 ;308-310 772-775.[citado 2024 nov. 04 ] Available from: https://doi.org/10.1016/S0921-4526(01)00835-3
Trabalho de evento-resumo
Plasmon- like oscillations of the electrons localized by the DX centers in doped 'Al IND.X''Ga IND.1-X'As (2001)
Pusep, Yuri A ; Chiquito, A. J.; Fortunato, W.; Galzerani, J. C.
Source: Proceedings. Conference titles: International Conference on Defects in Semiconductors. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
PUSEP, Yuri A et al. Plasmon- like oscillations of the electrons localized by the DX centers in doped 'Al IND.X''Ga IND.1-X'As. 2001, Anais.. Giessen: Instituto de Física de São Carlos, Universidade de São Paulo, 2001. . Acesso em: 04 nov. 2024.
APA
Pusep, Y. A., Chiquito, A. J., Fortunato, W., & Galzerani, J. C. (2001). Plasmon- like oscillations of the electrons localized by the DX centers in doped 'Al IND.X''Ga IND.1-X'As. In Proceedings. Giessen: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Pusep YA, Chiquito AJ, Fortunato W, Galzerani JC. Plasmon- like oscillations of the electrons localized by the DX centers in doped 'Al IND.X''Ga IND.1-X'As. Proceedings. 2001 ;[citado 2024 nov. 04 ]
Vancouver
Pusep YA, Chiquito AJ, Fortunato W, Galzerani JC. Plasmon- like oscillations of the electrons localized by the DX centers in doped 'Al IND.X''Ga IND.1-X'As. Proceedings. 2001 ;[citado 2024 nov. 04 ]

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