Raman probing of the wave function of collective excitations in the presence of disorder (2001)
- Authors:
- USP affiliated authors: POUSSEP, IOURI - IFSC ; LEITE, JOSE ROBERTO - IF
- Unidades: IFSC; IF
- DOI: 10.1016/S0921-4526(01)00835-3
- Assunto: FÍSICA DA MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: Elsevier Science
- Publisher place: Amsterdam
- Date published: 2001
- Source:
- Conference titles: International Conference on Defects in Semiconductors
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
PUSEP, Yuri A. et al. Raman probing of the wave function of collective excitations in the presence of disorder. Physica B. Amsterdam: Elsevier Science. Disponível em: https://doi.org/10.1016/S0921-4526(01)00835-3. Acesso em: 19 abr. 2024. , 2001 -
APA
Pusep, Y. A., Sokolov, S. S., Fortunato, W., Galzerani, J. C., & Leite, J. R. (2001). Raman probing of the wave function of collective excitations in the presence of disorder. Physica B. Amsterdam: Elsevier Science. doi:10.1016/S0921-4526(01)00835-3 -
NLM
Pusep YA, Sokolov SS, Fortunato W, Galzerani JC, Leite JR. Raman probing of the wave function of collective excitations in the presence of disorder [Internet]. Physica B. 2001 ;308-310 772-775.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1016/S0921-4526(01)00835-3 -
Vancouver
Pusep YA, Sokolov SS, Fortunato W, Galzerani JC, Leite JR. Raman probing of the wave function of collective excitations in the presence of disorder [Internet]. Physica B. 2001 ;308-310 772-775.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1016/S0921-4526(01)00835-3 - Raman probing of spatial extended collective excitations
- Vertical longitudinal magnetoresistance of semiconductor superlattices
- Transition from localized to extended states below the Fermi level in GaAs/AlGaAs multiple quantum well heterostructures
- Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure
- Plasmon- like oscillations of the electrons localized by the DX centers in doped 'Al IND.X''Ga IND.1-X'As
- Quantum interference and localization in disordered GaAs/AlGaAs superlattices
- Coherency of elementary excitations in disordered electron system
- Miniband effects in short-period InGaAs/InP superlattices
- Coherence of elementary excitations in disordered electron systems
- Conduction mechanisms in GaAs nanowire photovoltaics
Informações sobre o DOI: 10.1016/S0921-4526(01)00835-3 (Fonte: oaDOI API)
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