The interaction of point defects with a 90 'GRAUS' partial dislocation in Si (2003)
- Authors:
- Autor USP: FAZZIO, ADALBERTO - IF
- Unidade: IF
- Assunto: SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Publisher: Elsevier Science
- Publisher place: Amsterdam
- Date published: 2003
- Source:
- Título do periódico: Book of Abstracts II (Poster)
- Volume/Número/Paginação/Ano: Amsterdam : Elsevier Science, 2003
- Conference titles: International Conference on Defects in Semiconductors
-
ABNT
SCHMIDT, T M; ARANTES JUNIOR, Jeverson Teodoro; FAZZIO, Adalberto. The interaction of point defects with a 90 'GRAUS' partial dislocation in Si. Anais.. Amsterdam: Elsevier Science, 2003. -
APA
Schmidt, T. M., Arantes Junior, J. T., & Fazzio, A. (2003). The interaction of point defects with a 90 'GRAUS' partial dislocation in Si. In Book of Abstracts II (Poster). Amsterdam: Elsevier Science. -
NLM
Schmidt TM, Arantes Junior JT, Fazzio A. The interaction of point defects with a 90 'GRAUS' partial dislocation in Si. Book of Abstracts II (Poster). 2003 ; -
Vancouver
Schmidt TM, Arantes Junior JT, Fazzio A. The interaction of point defects with a 90 'GRAUS' partial dislocation in Si. Book of Abstracts II (Poster). 2003 ; - H2O and CO2 confined in cement based materials: an ab initio molecular dynamics study with van der Waals interactions
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