The interaction of point defects with a 90 'GRAUS' partial dislocation in Si (2003)
- Authors:
- USP affiliated author: FAZZIO, ADALBERTO - IF
- School: IF
- Subject: SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Publisher: Elsevier Science
- Place of publication: Amsterdam
- Date published: 2003
- Source:
- Título do periódico: Book of Abstracts II (Poster)
- Volume/Número/Paginação/Ano: Amsterdam : Elsevier Science, 2003
- Conference title: International Conference on Defects in Semiconductors
-
ABNT
SCHMIDT, T M e ARANTES JUNIOR, Jeverson Teodoro e FAZZIO, Adalberto. The interaction of point defects with a 90 'GRAUS' partial dislocation in Si. 2003, Anais.. Amsterdam: Elsevier Science, 2003. . Acesso em: 03 jul. 2022. -
APA
Schmidt, T. M., Arantes Junior, J. T., & Fazzio, A. (2003). The interaction of point defects with a 90 'GRAUS' partial dislocation in Si. In Book of Abstracts II (Poster). Amsterdam: Elsevier Science. -
NLM
Schmidt TM, Arantes Junior JT, Fazzio A. The interaction of point defects with a 90 'GRAUS' partial dislocation in Si. Book of Abstracts II (Poster). 2003 ;[citado 2022 jul. 03 ] -
Vancouver
Schmidt TM, Arantes Junior JT, Fazzio A. The interaction of point defects with a 90 'GRAUS' partial dislocation in Si. Book of Abstracts II (Poster). 2003 ;[citado 2022 jul. 03 ] - Theoretical study of natives defects in BN-nanotubes
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- Ab initio studyof '90 IND.0' partial dislocation in silicon
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- Theoretical study of "NH IND.3" sensors based on "CN IND.x" nanotubes
- Surpresas na física do estado solído
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- Carrier-mediated magnetism in transition metal doped 'BI' IND. 2''SE' IND. 3' topological insulator
- Topological phases in 2D-graphene-likes materials
- Tuning low-spin to high-spin 'MN' pairs in 2-D 'ZN''O' by injecting holes
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