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  • Source: Microelectronics Journal. Unidade: EESC

    Subjects: SEMICONDUTORES, NANOTECNOLOGIA, ENGENHARIA ELÉTRICA

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      SOUZA, Adelcio Marques de et al. Fully analytical compact model for the Q–V and C–V characteristics of cylindrical junctionless nanowire FETs. Microelectronics Journal, v. 119, p. 1-8, 2022Tradução . . Disponível em: http://dx.doi.org/10.1016/j.mejo.2021.105324. Acesso em: 23 out. 2025.
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      Souza, A. M. de, Celino, D. R., Ragi, R., & Romero, M. A. (2022). Fully analytical compact model for the Q–V and C–V characteristics of cylindrical junctionless nanowire FETs. Microelectronics Journal, 119, 1-8. doi:10.1016/j.mejo.2021.105324
    • NLM

      Souza AM de, Celino DR, Ragi R, Romero MA. Fully analytical compact model for the Q–V and C–V characteristics of cylindrical junctionless nanowire FETs [Internet]. Microelectronics Journal. 2022 ; 119 1-8.[citado 2025 out. 23 ] Available from: http://dx.doi.org/10.1016/j.mejo.2021.105324
    • Vancouver

      Souza AM de, Celino DR, Ragi R, Romero MA. Fully analytical compact model for the Q–V and C–V characteristics of cylindrical junctionless nanowire FETs [Internet]. Microelectronics Journal. 2022 ; 119 1-8.[citado 2025 out. 23 ] Available from: http://dx.doi.org/10.1016/j.mejo.2021.105324
  • Source: Microelectronics Journal. Unidade: EP

    Subjects: NANOTECNOLOGIA, MICROELETRÔNICA, ELETROQUÍMICA

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      HUANCA, Danilo Roque e RAIMUNDO, Daniel Scodeler e SALCEDO, Walter Jaimes. Backside contact effect on the morphological and optical features of porous silicon photonic crystals. Microelectronics Journal, v. 40, n. 4-5, p. 744-748, 2009Tradução . . Disponível em: https://doi.org/10.1016/j.mejo.2008.11.005. Acesso em: 23 out. 2025.
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      Huanca, D. R., Raimundo, D. S., & Salcedo, W. J. (2009). Backside contact effect on the morphological and optical features of porous silicon photonic crystals. Microelectronics Journal, 40( 4-5), 744-748. doi:10.1016/j.mejo.2008.11.005
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      Huanca DR, Raimundo DS, Salcedo WJ. Backside contact effect on the morphological and optical features of porous silicon photonic crystals [Internet]. Microelectronics Journal. 2009 ; 40( 4-5): 744-748.[citado 2025 out. 23 ] Available from: https://doi.org/10.1016/j.mejo.2008.11.005
    • Vancouver

      Huanca DR, Raimundo DS, Salcedo WJ. Backside contact effect on the morphological and optical features of porous silicon photonic crystals [Internet]. Microelectronics Journal. 2009 ; 40( 4-5): 744-748.[citado 2025 out. 23 ] Available from: https://doi.org/10.1016/j.mejo.2008.11.005
  • Source: Microelectronics Journal. Unidade: IFSC

    Subjects: CRESCIMENTO DE CRISTAIS, FIBRAS (ESTUDO), TÂNTALO, TERRAS RARAS

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      MACATRÃO, M. et al. Structural and optical properties on thulium-doped LHPG-grown 'Ta IND.2''O IND. 5' fibres. Microelectronics Journal, v. 40, n. 2, p. 309-312, 2009Tradução . . Disponível em: https://doi.org/10.1016/j.mejo.2008.07.033. Acesso em: 23 out. 2025.
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      Macatrão, M., Peres, M., Rubinger, C. P. L., Soares, M. J., Costa, L. C., Costa, F. M., et al. (2009). Structural and optical properties on thulium-doped LHPG-grown 'Ta IND.2''O IND. 5' fibres. Microelectronics Journal, 40( 2), 309-312. doi:10.1016/j.mejo.2008.07.033
    • NLM

      Macatrão M, Peres M, Rubinger CPL, Soares MJ, Costa LC, Costa FM, Monteiro T, Franco N, Alves E, Saggioro BZ, Andreeta MRB, Hernandes AC. Structural and optical properties on thulium-doped LHPG-grown 'Ta IND.2''O IND. 5' fibres [Internet]. Microelectronics Journal. 2009 ; 40( 2): 309-312.[citado 2025 out. 23 ] Available from: https://doi.org/10.1016/j.mejo.2008.07.033
    • Vancouver

      Macatrão M, Peres M, Rubinger CPL, Soares MJ, Costa LC, Costa FM, Monteiro T, Franco N, Alves E, Saggioro BZ, Andreeta MRB, Hernandes AC. Structural and optical properties on thulium-doped LHPG-grown 'Ta IND.2''O IND. 5' fibres [Internet]. Microelectronics Journal. 2009 ; 40( 2): 309-312.[citado 2025 out. 23 ] Available from: https://doi.org/10.1016/j.mejo.2008.07.033
  • Source: Microelectronics Journal. Unidade: EP

    Subjects: NANOTECNOLOGIA, MICROELETRÔNICA

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      RAIMUNDO, Daniel Scodeler et al. Anodic porous alumina structural characteristics study based on SEM image processing and analysis. Microelectronics Journal, v. 40, n. 4-5, p. 844-847, 2009Tradução . . Disponível em: https://doi.org/10.1016/j.mejo.2008.11.024. Acesso em: 23 out. 2025.
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      Raimundo, D. S., Calíope, P. B., Huanca, D. R., & Salcedo, W. J. (2009). Anodic porous alumina structural characteristics study based on SEM image processing and analysis. Microelectronics Journal, 40( 4-5), 844-847. doi:10.1016/j.mejo.2008.11.024
    • NLM

      Raimundo DS, Calíope PB, Huanca DR, Salcedo WJ. Anodic porous alumina structural characteristics study based on SEM image processing and analysis [Internet]. Microelectronics Journal. 2009 ; 40( 4-5): 844-847.[citado 2025 out. 23 ] Available from: https://doi.org/10.1016/j.mejo.2008.11.024
    • Vancouver

      Raimundo DS, Calíope PB, Huanca DR, Salcedo WJ. Anodic porous alumina structural characteristics study based on SEM image processing and analysis [Internet]. Microelectronics Journal. 2009 ; 40( 4-5): 844-847.[citado 2025 out. 23 ] Available from: https://doi.org/10.1016/j.mejo.2008.11.024
  • Source: Microelectronics Journal. Unidade: EP

    Subjects: TITÂNIO, LIGAS NÃO FERROSAS

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      GARZON, Carlos Mario et al. Hardness and structure characterization of Ti6Al4V films produced by reactive magnetron sputtering on a conventional austenitic stainless steel. Microelectronics Journal, v. 39, p. 1329-1330, 2008Tradução . . Disponível em: https://doi.org/10.1016/j.mejo.2008.01.047. Acesso em: 23 out. 2025.
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      Garzon, C. M., Alfonso Jose E,, Corredor, E. C., Recco, A. A. C., & Tschiptschin, A. P. (2008). Hardness and structure characterization of Ti6Al4V films produced by reactive magnetron sputtering on a conventional austenitic stainless steel. Microelectronics Journal, 39, 1329-1330. doi:10.1016/j.mejo.2008.01.047
    • NLM

      Garzon CM, Alfonso Jose E, Corredor EC, Recco AAC, Tschiptschin AP. Hardness and structure characterization of Ti6Al4V films produced by reactive magnetron sputtering on a conventional austenitic stainless steel [Internet]. Microelectronics Journal. 2008 ; 39 1329-1330.[citado 2025 out. 23 ] Available from: https://doi.org/10.1016/j.mejo.2008.01.047
    • Vancouver

      Garzon CM, Alfonso Jose E, Corredor EC, Recco AAC, Tschiptschin AP. Hardness and structure characterization of Ti6Al4V films produced by reactive magnetron sputtering on a conventional austenitic stainless steel [Internet]. Microelectronics Journal. 2008 ; 39 1329-1330.[citado 2025 out. 23 ] Available from: https://doi.org/10.1016/j.mejo.2008.01.047
  • Source: Microelectronics Journal. Unidade: EESC

    Subjects: EMISSÃO TERMOIÔNICA, SEMICONDUTORES

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      RAGI, Regiane e ROMERO, Murilo Araujo. I-V characteristics of Schottky contacts based on quantum wires. Microelectronics Journal, v. No 2006, n. 11, p. 1261-1264, 2006Tradução . . Disponível em: https://doi.org/10.1016/j.mejo.2006.06.006. Acesso em: 23 out. 2025.
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      Ragi, R., & Romero, M. A. (2006). I-V characteristics of Schottky contacts based on quantum wires. Microelectronics Journal, No 2006( 11), 1261-1264. doi:10.1016/j.mejo.2006.06.006
    • NLM

      Ragi R, Romero MA. I-V characteristics of Schottky contacts based on quantum wires [Internet]. Microelectronics Journal. 2006 ; No 2006( 11): 1261-1264.[citado 2025 out. 23 ] Available from: https://doi.org/10.1016/j.mejo.2006.06.006
    • Vancouver

      Ragi R, Romero MA. I-V characteristics of Schottky contacts based on quantum wires [Internet]. Microelectronics Journal. 2006 ; No 2006( 11): 1261-1264.[citado 2025 out. 23 ] Available from: https://doi.org/10.1016/j.mejo.2006.06.006
  • Source: Microelectronics Journal. Unidade: IFSC

    Subjects: SEMICONDUTORES, FOTOLUMINESCÊNCIA

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      RODRIGUES, S. C. P. e SIPAHI, Guilherme Matos e SILVA JUNIOR, E. F. Optical and electronic properties of AlInGaN/InGaN superlattices. Microelectronics Journal, v. 36, n. Ju 2005, p. 434-437, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.mejo.2005.02.041. Acesso em: 23 out. 2025.
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      Rodrigues, S. C. P., Sipahi, G. M., & Silva Junior, E. F. (2005). Optical and electronic properties of AlInGaN/InGaN superlattices. Microelectronics Journal, 36( Ju 2005), 434-437. doi:10.1016/j.mejo.2005.02.041
    • NLM

      Rodrigues SCP, Sipahi GM, Silva Junior EF. Optical and electronic properties of AlInGaN/InGaN superlattices [Internet]. Microelectronics Journal. 2005 ; 36( Ju 2005): 434-437.[citado 2025 out. 23 ] Available from: https://doi.org/10.1016/j.mejo.2005.02.041
    • Vancouver

      Rodrigues SCP, Sipahi GM, Silva Junior EF. Optical and electronic properties of AlInGaN/InGaN superlattices [Internet]. Microelectronics Journal. 2005 ; 36( Ju 2005): 434-437.[citado 2025 out. 23 ] Available from: https://doi.org/10.1016/j.mejo.2005.02.041
  • Source: Microelectronics Journal. Conference titles: Workshop of Semiconductor Nanodevices and Nanostructured Materials - NanoSemiMat. Unidade: IFSC

    Subjects: SEMICONDUTORES, FOTOLUMINESCÊNCIA

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      D'EURYDICE, Marcel Nogueira et al. Optical properties in p-type doping of nitrides quaternary alloys multiple quantum wells. Microelectronics Journal. Oxford: Elsevier Science. . Acesso em: 23 out. 2025. , 2005
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      D'Eurydice, M. N., Sipahi, G. M., Rodrigues, S. C. P., & Silva Junior, E. F. (2005). Optical properties in p-type doping of nitrides quaternary alloys multiple quantum wells. Microelectronics Journal. Oxford: Elsevier Science.
    • NLM

      D'Eurydice MN, Sipahi GM, Rodrigues SCP, Silva Junior EF. Optical properties in p-type doping of nitrides quaternary alloys multiple quantum wells. Microelectronics Journal. 2005 ; No 2005( 11): 1029-1033.[citado 2025 out. 23 ]
    • Vancouver

      D'Eurydice MN, Sipahi GM, Rodrigues SCP, Silva Junior EF. Optical properties in p-type doping of nitrides quaternary alloys multiple quantum wells. Microelectronics Journal. 2005 ; No 2005( 11): 1029-1033.[citado 2025 out. 23 ]
  • Source: Microelectronics Journal. Conference titles: Workshop of Semiconductor Nanodevices and Nanostructured Materials - NanoSemiMat. Unidade: IFSC

    Subjects: SEMICONDUTORES, FOTOLUMINESCÊNCIA

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      RODRIGUES, S. C. P. et al. Design of InGaN/AlInGaN superlattices for white-light device applications. Microelectronics Journal. Oxford: Elsevier Science. . Acesso em: 23 out. 2025. , 2005
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      Rodrigues, S. C. P., D'Eurydice, M. N., Sipahi, G. M., & Silva Junior, E. F. (2005). Design of InGaN/AlInGaN superlattices for white-light device applications. Microelectronics Journal. Oxford: Elsevier Science.
    • NLM

      Rodrigues SCP, D'Eurydice MN, Sipahi GM, Silva Junior EF. Design of InGaN/AlInGaN superlattices for white-light device applications. Microelectronics Journal. 2005 ; No 2005( 11): 1002-1005.[citado 2025 out. 23 ]
    • Vancouver

      Rodrigues SCP, D'Eurydice MN, Sipahi GM, Silva Junior EF. Design of InGaN/AlInGaN superlattices for white-light device applications. Microelectronics Journal. 2005 ; No 2005( 11): 1002-1005.[citado 2025 out. 23 ]
  • Source: Microelectronics Journal. Unidade: IFSC

    Subjects: SEMICONDUTORES, SUPERCONDUTIVIDADE, FOTOLUMINESCÊNCIA

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      MAREGA JUNIOR, Euclydes et al. Optical properties of GaAs/AlAs superlattices grown on (311)A GaAs surfaces. Microelectronics Journal, v. 35, n. Ja 2004, p. 41-43, 2004Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00221-0. Acesso em: 23 out. 2025.
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      Marega Junior, E., Oliveira, R. M., Souza, C. A., Arakaki, H., & González-Borrero, P. P. (2004). Optical properties of GaAs/AlAs superlattices grown on (311)A GaAs surfaces. Microelectronics Journal, 35( Ja 2004), 41-43. doi:10.1016/s0026-2692(03)00221-0
    • NLM

      Marega Junior E, Oliveira RM, Souza CA, Arakaki H, González-Borrero PP. Optical properties of GaAs/AlAs superlattices grown on (311)A GaAs surfaces [Internet]. Microelectronics Journal. 2004 ; 35( Ja 2004): 41-43.[citado 2025 out. 23 ] Available from: https://doi.org/10.1016/s0026-2692(03)00221-0
    • Vancouver

      Marega Junior E, Oliveira RM, Souza CA, Arakaki H, González-Borrero PP. Optical properties of GaAs/AlAs superlattices grown on (311)A GaAs surfaces [Internet]. Microelectronics Journal. 2004 ; 35( Ja 2004): 41-43.[citado 2025 out. 23 ] Available from: https://doi.org/10.1016/s0026-2692(03)00221-0
  • Source: Microelectronics Journal. Unidade: IF

    Subjects: ESTRUTURA ELETRÔNICA, DISPOSITIVOS ÓPTICOS, DISPOSITIVOS ELETRÔNICOS, TERMODINÂMICA

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      TELES, L K et al. Phase separation, effects of biaxial strain, and ordered phase formations in cubic nitride alloys. Microelectronics Journal, 2004Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00218-0. Acesso em: 23 out. 2025.
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      Teles, L. K., Marques, M., Ferreira, L. G., Scolfaro, L. M. R., & Leite, J. R. (2004). Phase separation, effects of biaxial strain, and ordered phase formations in cubic nitride alloys. Microelectronics Journal. doi:10.1016/s0026-2692(03)00218-0
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      Teles LK, Marques M, Ferreira LG, Scolfaro LMR, Leite JR. Phase separation, effects of biaxial strain, and ordered phase formations in cubic nitride alloys [Internet]. Microelectronics Journal. 2004 ;[citado 2025 out. 23 ] Available from: https://doi.org/10.1016/s0026-2692(03)00218-0
    • Vancouver

      Teles LK, Marques M, Ferreira LG, Scolfaro LMR, Leite JR. Phase separation, effects of biaxial strain, and ordered phase formations in cubic nitride alloys [Internet]. Microelectronics Journal. 2004 ;[citado 2025 out. 23 ] Available from: https://doi.org/10.1016/s0026-2692(03)00218-0
  • Source: Microelectronics Journal. Unidade: IF

    Subjects: ESTRUTURA ELETRÔNICA, SEMICONDUTIVIDADE

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      SÉRGIO, C. S. et al. Evolution of the two-dimensional towards three-dimensional Landau states in wide parabolic quantum well. Microelectronics Journal, v. 34, n. 5-8, p. 763-766, 2003Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1. Acesso em: 23 out. 2025.
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      Sérgio, C. S., Gusev, G. M., Quivy, A. A., Lamas, T. E., Leite, J. R., Estibals, O., & Portal, J. C. (2003). Evolution of the two-dimensional towards three-dimensional Landau states in wide parabolic quantum well. Microelectronics Journal, 34( 5-8), 763-766. Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1
    • NLM

      Sérgio CS, Gusev GM, Quivy AA, Lamas TE, Leite JR, Estibals O, Portal JC. Evolution of the two-dimensional towards three-dimensional Landau states in wide parabolic quantum well [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 763-766.[citado 2025 out. 23 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1
    • Vancouver

      Sérgio CS, Gusev GM, Quivy AA, Lamas TE, Leite JR, Estibals O, Portal JC. Evolution of the two-dimensional towards three-dimensional Landau states in wide parabolic quantum well [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 763-766.[citado 2025 out. 23 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1
  • Source: Microelectronics Journal. Unidade: EP

    Assunto: PLASMA (MICROELETRÔNICA)

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      MOUSINHO, Ana Paula et al. High density plasma chemical vapor deposition of diamond-like carbon films. Microelectronics Journal, v. 34, n. 5-8, p. 627-629, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00065-x. Acesso em: 23 out. 2025.
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      Mousinho, A. P., Mansano, R. D., Massi, M., & Zambom, L. da S. (2003). High density plasma chemical vapor deposition of diamond-like carbon films. Microelectronics Journal, 34( 5-8), 627-629. doi:10.1016/s0026-2692(03)00065-x
    • NLM

      Mousinho AP, Mansano RD, Massi M, Zambom L da S. High density plasma chemical vapor deposition of diamond-like carbon films [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 627-629.[citado 2025 out. 23 ] Available from: https://doi.org/10.1016/s0026-2692(03)00065-x
    • Vancouver

      Mousinho AP, Mansano RD, Massi M, Zambom L da S. High density plasma chemical vapor deposition of diamond-like carbon films [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 627-629.[citado 2025 out. 23 ] Available from: https://doi.org/10.1016/s0026-2692(03)00065-x
  • Source: Microelectronics Journal. Unidade: EP

    Assunto: PLASMA (MICROELETRÔNICA)

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      GUERINO, M. et al. The effects of the nitrogen on the electrical and structural properties of the diamond-like carbon (DLC) films. Microelectronics Journal, v. 34, n. 5-8, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00079-x. Acesso em: 23 out. 2025.
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      Guerino, M., Massi, M., Maciel, H. S., Otani, C., & Mansano, R. D. (2003). The effects of the nitrogen on the electrical and structural properties of the diamond-like carbon (DLC) films. Microelectronics Journal, 34( 5-8). doi:10.1016/s0026-2692(03)00079-x
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      Guerino M, Massi M, Maciel HS, Otani C, Mansano RD. The effects of the nitrogen on the electrical and structural properties of the diamond-like carbon (DLC) films [Internet]. Microelectronics Journal. 2003 ; 34( 5-8):[citado 2025 out. 23 ] Available from: https://doi.org/10.1016/s0026-2692(03)00079-x
    • Vancouver

      Guerino M, Massi M, Maciel HS, Otani C, Mansano RD. The effects of the nitrogen on the electrical and structural properties of the diamond-like carbon (DLC) films [Internet]. Microelectronics Journal. 2003 ; 34( 5-8):[citado 2025 out. 23 ] Available from: https://doi.org/10.1016/s0026-2692(03)00079-x
  • Source: Microelectronics Journal. Unidade: IFSC

    Assunto: FÍSICA DA MATÉRIA CONDENSADA

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      CANDIDO, L. e HAI, Guo-Qiang. Correlation energy of coupled double electron layers. Microelectronics Journal, v. 34, n. 5/8, p. 569-570, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00050-8. Acesso em: 23 out. 2025.
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      Candido, L., & Hai, G. -Q. (2003). Correlation energy of coupled double electron layers. Microelectronics Journal, 34( 5/8), 569-570. doi:10.1016/s0026-2692(03)00050-8
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      Candido L, Hai G-Q. Correlation energy of coupled double electron layers [Internet]. Microelectronics Journal. 2003 ; 34( 5/8): 569-570.[citado 2025 out. 23 ] Available from: https://doi.org/10.1016/s0026-2692(03)00050-8
    • Vancouver

      Candido L, Hai G-Q. Correlation energy of coupled double electron layers [Internet]. Microelectronics Journal. 2003 ; 34( 5/8): 569-570.[citado 2025 out. 23 ] Available from: https://doi.org/10.1016/s0026-2692(03)00050-8

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