ReP USP - Resultado da busca

Parte de monografia/livro
Exchange correlation effects on the quantum states of carriers in quantum wells in gaas-algaas heterostructures under in-plane magnetic fields (1988)
Oliveira, G M G; Gomes, V M S; Leite, J. R.; Chaves, A S
Source: Current Topics on Semiconductor Physics. Unidade: IF
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
OLIVEIRA, G M G et al. Exchange correlation effects on the quantum states of carriers in quantum wells in gaas-algaas heterostructures under in-plane magnetic fields. Current Topics on Semiconductor Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 23 jan. 2026.
APA
Oliveira, G. M. G., Gomes, V. M. S., Leite, J. R., & Chaves, A. S. (1988). Exchange correlation effects on the quantum states of carriers in quantum wells in gaas-algaas heterostructures under in-plane magnetic fields. In Current Topics on Semiconductor Physics. Singapore: World Scientific.
NLM
Oliveira GMG, Gomes VMS, Leite JR, Chaves AS. Exchange correlation effects on the quantum states of carriers in quantum wells in gaas-algaas heterostructures under in-plane magnetic fields. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2026 jan. 23 ]
Vancouver
Oliveira GMG, Gomes VMS, Leite JR, Chaves AS. Exchange correlation effects on the quantum states of carriers in quantum wells in gaas-algaas heterostructures under in-plane magnetic fields. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2026 jan. 23 ]
Parte de monografia/livro
Microscopic model for the vibrational modes associated to the 'B IND.S''H IND.I' complex in si (1988)
Silva, Euzi Conceição Fernandes da ; Assali, Lucy Vitoria Credidio ; Leite, J. R.; Dal Pino Junior, A
Source: Current Topics on Semiconductor Physics. Unidade: IF
Assunto: FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SILVA, Euzi Conceição Fernandes da et al. Microscopic model for the vibrational modes associated to the 'B IND.S''H IND.I' complex in si. Current Topics on Semiconductor Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 23 jan. 2026.
APA
Silva, E. C. F. da, Assali, L. V. C., Leite, J. R., & Dal Pino Junior, A. (1988). Microscopic model for the vibrational modes associated to the 'B IND.S''H IND.I' complex in si. In Current Topics on Semiconductor Physics. Singapore: World Scientific.
NLM
Silva ECF da, Assali LVC, Leite JR, Dal Pino Junior A. Microscopic model for the vibrational modes associated to the 'B IND.S''H IND.I' complex in si. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2026 jan. 23 ]
Vancouver
Silva ECF da, Assali LVC, Leite JR, Dal Pino Junior A. Microscopic model for the vibrational modes associated to the 'B IND.S''H IND.I' complex in si. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2026 jan. 23 ]
Parte de monografia/livro
Study of 4d and 5d impurities in gallium arsenide (1988)
Makiuchi, N; Macedo, T C; Caldas, Marilia Junqueira ; Fazzio, Adalberto
Source: Current Topics on Semiconductor Physics. Unidade: IF
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MAKIUCHI, N et al. Study of 4d and 5d impurities in gallium arsenide. Current Topics on Semiconductor Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 23 jan. 2026.
APA
Makiuchi, N., Macedo, T. C., Caldas, M. J., & Fazzio, A. (1988). Study of 4d and 5d impurities in gallium arsenide. In Current Topics on Semiconductor Physics. Singapore: World Scientific.
NLM
Makiuchi N, Macedo TC, Caldas MJ, Fazzio A. Study of 4d and 5d impurities in gallium arsenide. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2026 jan. 23 ]
Vancouver
Makiuchi N, Macedo TC, Caldas MJ, Fazzio A. Study of 4d and 5d impurities in gallium arsenide. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2026 jan. 23 ]
Parte de monografia/livro
Charge state stability of transition metals in semiconductors: negative u (1988)
Mota, R.; Fazzio, Adalberto
Source: Current Topics on Semiconductor Physics. Unidade: IF
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MOTA, R. e FAZZIO, Adalberto. Charge state stability of transition metals in semiconductors: negative u. Current Topics on Semiconductor Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 23 jan. 2026.
APA
Mota, R., & Fazzio, A. (1988). Charge state stability of transition metals in semiconductors: negative u. In Current Topics on Semiconductor Physics. Singapore: World Scientific.
NLM
Mota R, Fazzio A. Charge state stability of transition metals in semiconductors: negative u. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2026 jan. 23 ]
Vancouver
Mota R, Fazzio A. Charge state stability of transition metals in semiconductors: negative u. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2026 jan. 23 ]
Parte de monografia/livro
Deep levels induced by 3d-transition metal impurities in diamond (1988)
Alves, H W L; Leite, J. R.; Alves, J L A
Source: Current Topics on Semiconductor Physics. Unidade: IF
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ALVES, H W L e LEITE, J. R. e ALVES, J L A. Deep levels induced by 3d-transition metal impurities in diamond. Current Topics on Semiconductor Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 23 jan. 2026.
APA
Alves, H. W. L., Leite, J. R., & Alves, J. L. A. (1988). Deep levels induced by 3d-transition metal impurities in diamond. In Current Topics on Semiconductor Physics. Singapore: World Scientific.
NLM
Alves HWL, Leite JR, Alves JLA. Deep levels induced by 3d-transition metal impurities in diamond. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2026 jan. 23 ]
Vancouver
Alves HWL, Leite JR, Alves JLA. Deep levels induced by 3d-transition metal impurities in diamond. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2026 jan. 23 ]
Parte de monografia/livro
Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon (1988)
Assali, Lucy Vitoria Credidio ; Leite, J. R.
Source: Current Topics on Semiconductor Physics. Unidade: IF
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ASSALI, Lucy Vitoria Credidio e LEITE, J. R. Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon. Current Topics on Semiconductor Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 23 jan. 2026.
APA
Assali, L. V. C., & Leite, J. R. (1988). Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon. In Current Topics on Semiconductor Physics. Singapore: World Scientific.
NLM
Assali LVC, Leite JR. Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2026 jan. 23 ]
Vancouver
Assali LVC, Leite JR. Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2026 jan. 23 ]
Parte de monografia/livro
Dangling bonds reconstruction effects on the formation entropy of a silicon vacancy (1988)
Dal Pino Junior, A; Silva, Euzi Conceição Fernandes da ; Leite, J. R.
Source: Current Topics on Semiconductor Physics. Unidade: IF
Assunto: FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
DAL PINO JUNIOR, A e SILVA, Euzi Conceição Fernandes da e LEITE, J. R. Dangling bonds reconstruction effects on the formation entropy of a silicon vacancy. Current Topics on Semiconductor Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 23 jan. 2026.
APA
Dal Pino Junior, A., Silva, E. C. F. da, & Leite, J. R. (1988). Dangling bonds reconstruction effects on the formation entropy of a silicon vacancy. In Current Topics on Semiconductor Physics. Singapore: World Scientific.
NLM
Dal Pino Junior A, Silva ECF da, Leite JR. Dangling bonds reconstruction effects on the formation entropy of a silicon vacancy. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2026 jan. 23 ]
Vancouver
Dal Pino Junior A, Silva ECF da, Leite JR. Dangling bonds reconstruction effects on the formation entropy of a silicon vacancy. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2026 jan. 23 ]
Parte de monografia/livro
Role played by interstitial 3d transition - metal atoms in gaas (1988)
Scolfaro, L M R; Fazzio, Adalberto
Source: Current Topics on Semiconductor Physics. Unidade: IF
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SCOLFARO, L M R e FAZZIO, Adalberto. Role played by interstitial 3d transition - metal atoms in gaas. Current Topics on Semiconductor Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 23 jan. 2026.
APA
Scolfaro, L. M. R., & Fazzio, A. (1988). Role played by interstitial 3d transition - metal atoms in gaas. In Current Topics on Semiconductor Physics. Singapore: World Scientific.
NLM
Scolfaro LMR, Fazzio A. Role played by interstitial 3d transition - metal atoms in gaas. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2026 jan. 23 ]
Vancouver
Scolfaro LMR, Fazzio A. Role played by interstitial 3d transition - metal atoms in gaas. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2026 jan. 23 ]
Parte de monografia/livro
Correlation effects nad structural stability in si: o, s< and 'N POT.-' (1988)
Antonelli, A; Valle do Amaral, O A; Canuto, Sylvio Roberto Accioly ; Fazzio, Adalberto
Source: Current Topics on Semiconductor Physics. Unidade: IF
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ANTONELLI, A et al. Correlation effects nad structural stability in si: o, s< and 'N POT.-'. Current Topics on Semiconductor Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 23 jan. 2026.
APA
Antonelli, A., Valle do Amaral, O. A., Canuto, S. R. A., & Fazzio, A. (1988). Correlation effects nad structural stability in si: o, s< and 'N POT.-'. In Current Topics on Semiconductor Physics. Singapore: World Scientific.
NLM
Antonelli A, Valle do Amaral OA, Canuto SRA, Fazzio A. Correlation effects nad structural stability in si: o, s< and 'N POT.-'. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2026 jan. 23 ]
Vancouver
Antonelli A, Valle do Amaral OA, Canuto SRA, Fazzio A. Correlation effects nad structural stability in si: o, s< and 'N POT.-'. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2026 jan. 23 ]

USP Schools

ReP

Filtros

Authors

USP affiliated authors