Role played by interstitial 3d transition - metal atoms in gaas (1988)
- Authors:
- Autor USP: FAZZIO, ADALBERTO - IF
- Unidade: IF
- Language: Português
- Imprenta:
- Publisher: World Scientific
- Publisher place: Singapore
- Date published: 1988
- Source:
- Título do periódico: Current Topics on Semiconductor Physics
-
ABNT
SCOLFARO, L M R e FAZZIO, A. Role played by interstitial 3d transition - metal atoms in gaas. Current Topics on Semiconductor Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 23 abr. 2024. -
APA
Scolfaro, L. M. R., & Fazzio, A. (1988). Role played by interstitial 3d transition - metal atoms in gaas. In Current Topics on Semiconductor Physics. Singapore: World Scientific. -
NLM
Scolfaro LMR, Fazzio A. Role played by interstitial 3d transition - metal atoms in gaas. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2024 abr. 23 ] -
Vancouver
Scolfaro LMR, Fazzio A. Role played by interstitial 3d transition - metal atoms in gaas. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2024 abr. 23 ] - Spectral distribution of photoionization cross section of 'FE POT.2+' in inp: 'FE'
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- Role played by n and n-n impurities in type-'IV' semiconductors
- Theoretical investigation of the optical spectra of superconducting 'YBA IND.2''CU IND.3''O IND.7'
- Electronic structure of periodically 'SI'-'GAMA'-doped'GA''AS'
- Theoretical investigation of '3D POT.N' and '4D POT.N' impurities in gan
- Optical transitions in ruby across the corundum to 'Rh IND.2''O IND.3' (II) phase transformation
- Gap e 'GA''AS' dopados com 'V POT.2+': baixo spin x alto spin
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