Role played by interstitial 3d transition - metal atoms in gaas (1988)
- Authors:
- Autor USP: FAZZIO, ADALBERTO - IF
- Unidade: IF
- Language: Português
- Imprenta:
- Publisher: World Scientific
- Publisher place: Singapore
- Date published: 1988
- Source:
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ABNT
SCOLFARO, L M R e FAZZIO, Adalberto. Role played by interstitial 3d transition - metal atoms in gaas. Current Topics on Semiconductor Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 14 mar. 2026. -
APA
Scolfaro, L. M. R., & Fazzio, A. (1988). Role played by interstitial 3d transition - metal atoms in gaas. In Current Topics on Semiconductor Physics. Singapore: World Scientific. -
NLM
Scolfaro LMR, Fazzio A. Role played by interstitial 3d transition - metal atoms in gaas. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2026 mar. 14 ] -
Vancouver
Scolfaro LMR, Fazzio A. Role played by interstitial 3d transition - metal atoms in gaas. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2026 mar. 14 ] - Conformational analysis of tannic acid: environment effects in electronic and reactivity properties
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