Study of 4d and 5d impurities in gallium arsenide (1988)
- Authors:
- USP affiliated authors: FAZZIO, ADALBERTO - IF ; CALDAS, MARILIA JUNQUEIRA - IF
- Unidade: IF
- Language: Português
- Imprenta:
- Publisher: World Scientific
- Publisher place: Singapore
- Date published: 1988
- Source:
-
ABNT
MAKIUCHI, N et al. Study of 4d and 5d impurities in gallium arsenide. Current Topics on Semiconductor Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 23 jan. 2026. -
APA
Makiuchi, N., Macedo, T. C., Caldas, M. J., & Fazzio, A. (1988). Study of 4d and 5d impurities in gallium arsenide. In Current Topics on Semiconductor Physics. Singapore: World Scientific. -
NLM
Makiuchi N, Macedo TC, Caldas MJ, Fazzio A. Study of 4d and 5d impurities in gallium arsenide. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2026 jan. 23 ] -
Vancouver
Makiuchi N, Macedo TC, Caldas MJ, Fazzio A. Study of 4d and 5d impurities in gallium arsenide. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2026 jan. 23 ] - Defeitos de anti-sitio e tipo anti-sitio em 'GA''AP'
- Analise dos efeitos relativisticos e multipletos na estrutura eletronica de impurezas hd no gap
- Excitation and ionization of 'MO' and w in 'GA''AS'
- Theoretical investigation of the electrical and optical activity of vanadium in 'GA''AS'
- Study of 4d and 5d impurities in iii-v semiconductors
- Estabilidade e metaestabilidade de defeitos em 'GA''AS'
- Influencia dos orbitais mn-3d no espectro otico de ligas 'CD IND.1-X''MN IND.X''TE'
- Impurities in gallium arsenide and phosphide: the 4d and 5d series
- Anion-antisite-like defects in iii-v compounds
- Metaestabilidade de impurezas tipo iv em 'GA''AS'
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