Dangling bonds reconstruction effects on the formation entropy of a silicon vacancy (1988)
- Authors:
- Autor USP: LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Assunto: FÍSICA
- Language: Português
- Imprenta:
- Publisher: World Scientific
- Publisher place: Singapore
- Date published: 1988
- Source:
-
ABNT
DAL PINO JUNIOR, A e SILVA, Euzi Conceição Fernandes da e LEITE, J. R. Dangling bonds reconstruction effects on the formation entropy of a silicon vacancy. Current Topics on Semiconductor Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 23 jan. 2026. -
APA
Dal Pino Junior, A., Silva, E. C. F. da, & Leite, J. R. (1988). Dangling bonds reconstruction effects on the formation entropy of a silicon vacancy. In Current Topics on Semiconductor Physics. Singapore: World Scientific. -
NLM
Dal Pino Junior A, Silva ECF da, Leite JR. Dangling bonds reconstruction effects on the formation entropy of a silicon vacancy. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2026 jan. 23 ] -
Vancouver
Dal Pino Junior A, Silva ECF da, Leite JR. Dangling bonds reconstruction effects on the formation entropy of a silicon vacancy. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2026 jan. 23 ] - Optical properties of cubic InGaN epilayers grown by MBE
- Elementary excitations of modulation-doped quantum-wells
- Polaronic effects on the intra-donor 1s'SETA''2p POT. '= OU -'' transition energies in GaN structures
- Theoretical LEED parameters for the zinc-blende GaN (110) surface
- Deep-levels in diamond: the substitucional nitrogen and the simple neutrol vacancy
- Self-consistent band structure calculations by the variational cellular method
- Semiconductor physics: procedings of the 3 rd brazilian school of semiconductor physics
- Evidence of Fabry-Pérot oscillations in the emission spectra of deep centers in cubic GaN epitaxial layers
- Deep-levels associated to chalcogen impurities in silicon
- Ferromagnetism in the metallic phase of (Ga, Mn)N nanostructures
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