Filtros : "SCOLFARO, LUISA MARIA RIBEIRO" Removido: "Brasil" Limpar

Filtros



Refine with date range


  • Source: AIP Conference Proceedings. Conference titles: 28th International Conference on the Physics of Semiconductors - ICPS 2006. Unidade: IF

    Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA, MAGNETISMO

    Acesso à fonteHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      MARQUES, M et al. Ab initio study of GaN/'Mn IND.x' 'Ga IND.i-x' N digital heterostructure. AIP Conference Proceedings. New York: The Institute. Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001001249000001&idtype=cvips&prog=normal. Acesso em: 31 out. 2025. , 2007
    • APA

      Marques, M., Ferreira, L. G., Teles, L. K., Scolfaro, L. M. R., Furthmüller, J., & Bechstedt, F. (2007). Ab initio study of GaN/'Mn IND.x' 'Ga IND.i-x' N digital heterostructure. AIP Conference Proceedings. New York: The Institute. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001001249000001&idtype=cvips&prog=normal
    • NLM

      Marques M, Ferreira LG, Teles LK, Scolfaro LMR, Furthmüller J, Bechstedt F. Ab initio study of GaN/'Mn IND.x' 'Ga IND.i-x' N digital heterostructure [Internet]. AIP Conference Proceedings. 2007 ; 893 1249-1250.[citado 2025 out. 31 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001001249000001&idtype=cvips&prog=normal
    • Vancouver

      Marques M, Ferreira LG, Teles LK, Scolfaro LMR, Furthmüller J, Bechstedt F. Ab initio study of GaN/'Mn IND.x' 'Ga IND.i-x' N digital heterostructure [Internet]. AIP Conference Proceedings. 2007 ; 893 1249-1250.[citado 2025 out. 31 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001001249000001&idtype=cvips&prog=normal
  • Source: Journal of Applied Physics. Unidades: IFSC, IF

    Subjects: EMISSÃO DA LUZ, ESPECTROS, LUMINESCÊNCIA, ABSORÇÃO

    Versão PublicadaAcesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      RODRIGUES, S. C. P. et al. White ligth emission from 'rô'-doped quartenary (AlInGa)N-based superlattices: theoretical calculations for the cubic phase. Journal of Applied Physics, v. 101, n. Ju 2007, p. 113706-1-113706-6, 2007Tradução . . Disponível em: https://doi.org/10.1063/1.2737968. Acesso em: 31 out. 2025.
    • APA

      Rodrigues, S. C. P., D'Eurydice, M. N., Sipahi, G. M., Scolfaro, L. M. R., & Silva Júnior, E. F. da. (2007). White ligth emission from 'rô'-doped quartenary (AlInGa)N-based superlattices: theoretical calculations for the cubic phase. Journal of Applied Physics, 101( Ju 2007), 113706-1-113706-6. doi:10.1063/1.2737968
    • NLM

      Rodrigues SCP, D'Eurydice MN, Sipahi GM, Scolfaro LMR, Silva Júnior EF da. White ligth emission from 'rô'-doped quartenary (AlInGa)N-based superlattices: theoretical calculations for the cubic phase [Internet]. Journal of Applied Physics. 2007 ; 101( Ju 2007): 113706-1-113706-6.[citado 2025 out. 31 ] Available from: https://doi.org/10.1063/1.2737968
    • Vancouver

      Rodrigues SCP, D'Eurydice MN, Sipahi GM, Scolfaro LMR, Silva Júnior EF da. White ligth emission from 'rô'-doped quartenary (AlInGa)N-based superlattices: theoretical calculations for the cubic phase [Internet]. Journal of Applied Physics. 2007 ; 101( Ju 2007): 113706-1-113706-6.[citado 2025 out. 31 ] Available from: https://doi.org/10.1063/1.2737968
  • Source: AIP Conference Proceedings. Conference titles: 28th International Conference on the Physics of Semiconductors - ICPS 2006. Unidade: IF

    Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA, MAGNETISMO, MATERIAIS MAGNÉTICOS

    Acesso à fonteHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      RIBEIRO JUNIOR, M et al. Theoretical study of magnetic properties of VN, CrN, MnN, FeN and CoN under strain. AIP Conference Proceedings. New York: The Institute. Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001001227000001&idtype=cvips&prog=normal. Acesso em: 31 out. 2025. , 2007
    • APA

      Ribeiro Junior, M., Marques, M., Scolfaro, L. M. R., Teles, L. K., & Ferreira, L. G. (2007). Theoretical study of magnetic properties of VN, CrN, MnN, FeN and CoN under strain. AIP Conference Proceedings. New York: The Institute. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001001227000001&idtype=cvips&prog=normal
    • NLM

      Ribeiro Junior M, Marques M, Scolfaro LMR, Teles LK, Ferreira LG. Theoretical study of magnetic properties of VN, CrN, MnN, FeN and CoN under strain [Internet]. AIP Conference Proceedings. 2007 ; 893 1227-1228.[citado 2025 out. 31 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001001227000001&idtype=cvips&prog=normal
    • Vancouver

      Ribeiro Junior M, Marques M, Scolfaro LMR, Teles LK, Ferreira LG. Theoretical study of magnetic properties of VN, CrN, MnN, FeN and CoN under strain [Internet]. AIP Conference Proceedings. 2007 ; 893 1227-1228.[citado 2025 out. 31 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001001227000001&idtype=cvips&prog=normal
  • Source: AIP Conference Proceedings. Conference titles: 28th International Conference on the Physics of Semiconductors - ICPS 2006. Unidades: IF, EP

    Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA

    Acesso à fonteHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      LINO, A T et al. Optical properties and carrier effective masses of Rutile 'SnO IND.2' as obtained from full relativistic ab initio calculations. AIP Conference Proceedings. New York: The Institute. Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000259000001&idtype=cvips&prog=normal. Acesso em: 31 out. 2025. , 2007
    • APA

      Lino, A. T., Borges, P. D., Scolfaro, L. M. R., Rodrigues, S. C. P., & Silva Junior, E. F. da. (2007). Optical properties and carrier effective masses of Rutile 'SnO IND.2' as obtained from full relativistic ab initio calculations. AIP Conference Proceedings. New York: The Institute. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000259000001&idtype=cvips&prog=normal
    • NLM

      Lino AT, Borges PD, Scolfaro LMR, Rodrigues SCP, Silva Junior EF da. Optical properties and carrier effective masses of Rutile 'SnO IND.2' as obtained from full relativistic ab initio calculations [Internet]. AIP Conference Proceedings. 2007 ; 893 529-530.[citado 2025 out. 31 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000259000001&idtype=cvips&prog=normal
    • Vancouver

      Lino AT, Borges PD, Scolfaro LMR, Rodrigues SCP, Silva Junior EF da. Optical properties and carrier effective masses of Rutile 'SnO IND.2' as obtained from full relativistic ab initio calculations [Internet]. AIP Conference Proceedings. 2007 ; 893 529-530.[citado 2025 out. 31 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000259000001&idtype=cvips&prog=normal
  • Source: AIP Conference Proceedings. Conference titles: 28th International Conference on the Physics of Semiconductors - ICPS 2006. Unidade: IF

    Subjects: SEMICONDUTORES, DIELÉTRICOS

    Acesso à fonteHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      SILVA, C C e ALVES, H W Leite e SCOLFARO, Luisa Maria Ribeiro. Frequency dependence of the dielectric constants and of the reflectivity for 'HfC IND.2' and 'ZrC IND.2' from first-principles calculations. AIP Conference Proceedings. New York: The Institute. Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000311000001&idtype=cvips&prog=normal. Acesso em: 31 out. 2025. , 2007
    • APA

      Silva, C. C., Alves, H. W. L., & Scolfaro, L. M. R. (2007). Frequency dependence of the dielectric constants and of the reflectivity for 'HfC IND.2' and 'ZrC IND.2' from first-principles calculations. AIP Conference Proceedings. New York: The Institute. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000311000001&idtype=cvips&prog=normal
    • NLM

      Silva CC, Alves HWL, Scolfaro LMR. Frequency dependence of the dielectric constants and of the reflectivity for 'HfC IND.2' and 'ZrC IND.2' from first-principles calculations [Internet]. AIP Conference Proceedings. 2007 ; 893 311-312.[citado 2025 out. 31 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000311000001&idtype=cvips&prog=normal
    • Vancouver

      Silva CC, Alves HWL, Scolfaro LMR. Frequency dependence of the dielectric constants and of the reflectivity for 'HfC IND.2' and 'ZrC IND.2' from first-principles calculations [Internet]. AIP Conference Proceedings. 2007 ; 893 311-312.[citado 2025 out. 31 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000311000001&idtype=cvips&prog=normal
  • Source: Journal of Applied Physics. Unidade: IF

    Subjects: ESTRUTURA ELETRÔNICA, DIELÉTRICOS, PROPRIEDADES DOS MATERIAIS

    Acesso à fonteAcesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      GARCIA, Joelson Cott et al. Structural, electronic, and optical properties of "ZrO IND.2" from ab initio calculations. Journal of Applied Physics, v. 100, n. 1, p. 104103-1/104103-9, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2386967. Acesso em: 31 out. 2025.
    • APA

      Garcia, J. C., Scolfaro, L. M. R., Lino, A. T., Freire, V. N., Farias, G. A., Silva, C. C., et al. (2006). Structural, electronic, and optical properties of "ZrO IND.2" from ab initio calculations. Journal of Applied Physics, 100( 1), 104103-1/104103-9. doi:10.1063/1.2386967
    • NLM

      Garcia JC, Scolfaro LMR, Lino AT, Freire VN, Farias GA, Silva CC, Alves HWL, Rodrigues SCP, Silva EF da. Structural, electronic, and optical properties of "ZrO IND.2" from ab initio calculations [Internet]. Journal of Applied Physics. 2006 ; 100( 1): 104103-1/104103-9.[citado 2025 out. 31 ] Available from: https://doi.org/10.1063/1.2386967
    • Vancouver

      Garcia JC, Scolfaro LMR, Lino AT, Freire VN, Farias GA, Silva CC, Alves HWL, Rodrigues SCP, Silva EF da. Structural, electronic, and optical properties of "ZrO IND.2" from ab initio calculations [Internet]. Journal of Applied Physics. 2006 ; 100( 1): 104103-1/104103-9.[citado 2025 out. 31 ] Available from: https://doi.org/10.1063/1.2386967
  • Source: Physical Review B. Unidade: IF

    Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES, FERROMAGNETISMO

    Acesso à fonteHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      MARQUES, M et al. Magnetic properties of GaN/MnxGa1-xN digital heterostructures: first-principles and Monte Carlo calculations. Physical Review B, v. 73, n. 22, p. 224409, 2006Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000073000022224409000001&idtype=cvips&prog=normal. Acesso em: 31 out. 2025.
    • APA

      Marques, M., Ferreira, L. G., Teles, L. K., Scolfaro, L. M. R., Furthmuller, J., & Bechstedt, F. (2006). Magnetic properties of GaN/MnxGa1-xN digital heterostructures: first-principles and Monte Carlo calculations. Physical Review B, 73( 22), 224409. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000073000022224409000001&idtype=cvips&prog=normal
    • NLM

      Marques M, Ferreira LG, Teles LK, Scolfaro LMR, Furthmuller J, Bechstedt F. Magnetic properties of GaN/MnxGa1-xN digital heterostructures: first-principles and Monte Carlo calculations [Internet]. Physical Review B. 2006 ; 73( 22): 224409.[citado 2025 out. 31 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000073000022224409000001&idtype=cvips&prog=normal
    • Vancouver

      Marques M, Ferreira LG, Teles LK, Scolfaro LMR, Furthmuller J, Bechstedt F. Magnetic properties of GaN/MnxGa1-xN digital heterostructures: first-principles and Monte Carlo calculations [Internet]. Physical Review B. 2006 ; 73( 22): 224409.[citado 2025 out. 31 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000073000022224409000001&idtype=cvips&prog=normal
  • Source: Applied Physics Letters. Unidade: IF

    Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES

    Acesso à fonteAcesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      MARQUES, M et al. Theoretical prediction of ferromagnetic MnN layers embedded in wurtzite GaN. Applied Physics Letters, v. 88, n. 2, p. 022507-1/022507-3, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2162802. Acesso em: 31 out. 2025.
    • APA

      Marques, M., Scolfaro, L. M. R., Teles, L. K., Furthmüller, J., Bechstedt, F., & Ferreira, L. G. (2006). Theoretical prediction of ferromagnetic MnN layers embedded in wurtzite GaN. Applied Physics Letters, 88( 2), 022507-1/022507-3. doi:10.1063/1.2162802
    • NLM

      Marques M, Scolfaro LMR, Teles LK, Furthmüller J, Bechstedt F, Ferreira LG. Theoretical prediction of ferromagnetic MnN layers embedded in wurtzite GaN [Internet]. Applied Physics Letters. 2006 ; 88( 2): 022507-1/022507-3.[citado 2025 out. 31 ] Available from: https://doi.org/10.1063/1.2162802
    • Vancouver

      Marques M, Scolfaro LMR, Teles LK, Furthmüller J, Bechstedt F, Ferreira LG. Theoretical prediction of ferromagnetic MnN layers embedded in wurtzite GaN [Internet]. Applied Physics Letters. 2006 ; 88( 2): 022507-1/022507-3.[citado 2025 out. 31 ] Available from: https://doi.org/10.1063/1.2162802
  • Source: Physical Review B. Unidade: IF

    Subjects: MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA, PROPRIEDADES DOS MATERIAIS

    Acesso à fonteHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      MARQUES, M et al. Statistical model applied to "A IND.X" "B IND.Y" "C IND.1-X-Y" D quaternary alloys: bond lengths and energy gaps of "Al IND.X" "Ga IND.Y" "In IND.1-X-Y" X (X=As, P, or N) systems. Physical Review B, v. 73, n. 23, p. 235205, 2006Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000073000023235205000001&idtype=cvips&prog=normal. Acesso em: 31 out. 2025.
    • APA

      Marques, M., Teles, L. K., Ferreira, L. G., & Scolfaro, L. M. R. (2006). Statistical model applied to "A IND.X" "B IND.Y" "C IND.1-X-Y" D quaternary alloys: bond lengths and energy gaps of "Al IND.X" "Ga IND.Y" "In IND.1-X-Y" X (X=As, P, or N) systems. Physical Review B, 73( 23), 235205. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000073000023235205000001&idtype=cvips&prog=normal
    • NLM

      Marques M, Teles LK, Ferreira LG, Scolfaro LMR. Statistical model applied to "A IND.X" "B IND.Y" "C IND.1-X-Y" D quaternary alloys: bond lengths and energy gaps of "Al IND.X" "Ga IND.Y" "In IND.1-X-Y" X (X=As, P, or N) systems [Internet]. Physical Review B. 2006 ; 73( 23): 235205.[citado 2025 out. 31 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000073000023235205000001&idtype=cvips&prog=normal
    • Vancouver

      Marques M, Teles LK, Ferreira LG, Scolfaro LMR. Statistical model applied to "A IND.X" "B IND.Y" "C IND.1-X-Y" D quaternary alloys: bond lengths and energy gaps of "Al IND.X" "Ga IND.Y" "In IND.1-X-Y" X (X=As, P, or N) systems [Internet]. Physical Review B. 2006 ; 73( 23): 235205.[citado 2025 out. 31 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000073000023235205000001&idtype=cvips&prog=normal
  • Source: Journal of Magnetism and Magnetic Materials. Unidade: IF

    Subjects: MAGNETISMO, MATERIAIS MAGNÉTICOS, MATÉRIA CONDENSADA, FERROMAGNETISMO, SEMICONDUTORES, ESTRUTURA ELETRÔNICA

    Acesso à fonteHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      PAIVA, R de et al. Cubic binary compounds MnN and MnAs and diluted magnetic "Ga IND.1-x" "Mn IND.x" N semiconductor alloys: a first-principle study. Journal of Magnetism and Magnetic Materials, v. 288, n. 384-396, 2005Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5312&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=8a966c82df0d4a9d62f773e687985ec0. Acesso em: 31 out. 2025.
    • APA

      Paiva, R. de, Alves, J. L. A., Nogueira, R. A., Leite, J. R., & Scolfaro, L. M. R. (2005). Cubic binary compounds MnN and MnAs and diluted magnetic "Ga IND.1-x" "Mn IND.x" N semiconductor alloys: a first-principle study. Journal of Magnetism and Magnetic Materials, 288( 384-396). Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5312&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=8a966c82df0d4a9d62f773e687985ec0
    • NLM

      Paiva R de, Alves JLA, Nogueira RA, Leite JR, Scolfaro LMR. Cubic binary compounds MnN and MnAs and diluted magnetic "Ga IND.1-x" "Mn IND.x" N semiconductor alloys: a first-principle study [Internet]. Journal of Magnetism and Magnetic Materials. 2005 ; 288( 384-396):[citado 2025 out. 31 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5312&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=8a966c82df0d4a9d62f773e687985ec0
    • Vancouver

      Paiva R de, Alves JLA, Nogueira RA, Leite JR, Scolfaro LMR. Cubic binary compounds MnN and MnAs and diluted magnetic "Ga IND.1-x" "Mn IND.x" N semiconductor alloys: a first-principle study [Internet]. Journal of Magnetism and Magnetic Materials. 2005 ; 288( 384-396):[citado 2025 out. 31 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5312&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=8a966c82df0d4a9d62f773e687985ec0
  • Source: Physics Status Solidi C. Unidade: IF

    Assunto: ESTADO SÓLIDO

    Acesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      MARQUES, M et al. Ab initio studies of indium separated phases in AlGaInN quaternary alloys. Physics Status Solidi C, v. 2, n. 7, p. 2508-2511, 2005Tradução . . Disponível em: https://doi.org/10.1002/pssc.200461516. Acesso em: 31 out. 2025.
    • APA

      Marques, M., Teles, L. K., Scolfaro, L. M. R., & Leite, J. R. (2005). Ab initio studies of indium separated phases in AlGaInN quaternary alloys. Physics Status Solidi C, 2( 7), 2508-2511. doi:10.1002/pssc.200461516
    • NLM

      Marques M, Teles LK, Scolfaro LMR, Leite JR. Ab initio studies of indium separated phases in AlGaInN quaternary alloys [Internet]. Physics Status Solidi C. 2005 ; 2( 7): 2508-2511.[citado 2025 out. 31 ] Available from: https://doi.org/10.1002/pssc.200461516
    • Vancouver

      Marques M, Teles LK, Scolfaro LMR, Leite JR. Ab initio studies of indium separated phases in AlGaInN quaternary alloys [Internet]. Physics Status Solidi C. 2005 ; 2( 7): 2508-2511.[citado 2025 out. 31 ] Available from: https://doi.org/10.1002/pssc.200461516
  • Source: AIP Conference Proceedings. Conference titles: International Conference on the Physics of Semiconductors - ICPS. Unidades: IFSC, IF

    Subjects: SEMICONDUTORES, SUPERFÍCIE FÍSICA, MATÉRIA CONDENSADA, MAGNETISMO, POLARIZAÇÃO

    Versão PublicadaAcesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      SIPAHI, Guilherme Matos et al. Spin-polarized charge densities in (In,Ga,Mn)As-based diluted magnetic semiconductor ternary and quaternary alloy heterostructures. AIP Conference Proceedings. Melville: American Institute of Physics - AIP. Disponível em: https://doi.org/10.1063/1.1994119. Acesso em: 31 out. 2025. , 2005
    • APA

      Sipahi, G. M., Rodrigues, S. C. P., Scolfaro, L. M. R., Lima, I. C. da C., & Leite, J. R. (2005). Spin-polarized charge densities in (In,Ga,Mn)As-based diluted magnetic semiconductor ternary and quaternary alloy heterostructures. AIP Conference Proceedings. Melville: American Institute of Physics - AIP. doi:10.1063/1.1994119
    • NLM

      Sipahi GM, Rodrigues SCP, Scolfaro LMR, Lima IC da C, Leite JR. Spin-polarized charge densities in (In,Ga,Mn)As-based diluted magnetic semiconductor ternary and quaternary alloy heterostructures [Internet]. AIP Conference Proceedings. 2005 ; 772( 1): 323-324.[citado 2025 out. 31 ] Available from: https://doi.org/10.1063/1.1994119
    • Vancouver

      Sipahi GM, Rodrigues SCP, Scolfaro LMR, Lima IC da C, Leite JR. Spin-polarized charge densities in (In,Ga,Mn)As-based diluted magnetic semiconductor ternary and quaternary alloy heterostructures [Internet]. AIP Conference Proceedings. 2005 ; 772( 1): 323-324.[citado 2025 out. 31 ] Available from: https://doi.org/10.1063/1.1994119
  • Source: Physical Review B. Unidade: IF

    Subjects: MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA, MÉTODO DE MONTE CARLO, MUDANÇA DE FASE, SUPERFÍCIE FÍSICA, SEMICONDUTORES

    Acesso à fonteHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      MARQUES, M et al. Monte Carlo simulations applied to "Al IND.X" "Ga IND.Y" "In IND.1-X-Y" X quaternary alloys (X=As, P, N): a comparative study. Physical Review B, v. 71, n. 20, p. 205204/1-205204/11, 2005Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000071000020205204000001&idtype=cvips&prog=normal. Acesso em: 31 out. 2025.
    • APA

      Marques, M., Ferreira, L. G., Teles, L. K., & Scolfaro, L. M. R. (2005). Monte Carlo simulations applied to "Al IND.X" "Ga IND.Y" "In IND.1-X-Y" X quaternary alloys (X=As, P, N): a comparative study. Physical Review B, 71( 20), 205204/1-205204/11. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000071000020205204000001&idtype=cvips&prog=normal
    • NLM

      Marques M, Ferreira LG, Teles LK, Scolfaro LMR. Monte Carlo simulations applied to "Al IND.X" "Ga IND.Y" "In IND.1-X-Y" X quaternary alloys (X=As, P, N): a comparative study [Internet]. Physical Review B. 2005 ; 71( 20): 205204/1-205204/11.[citado 2025 out. 31 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000071000020205204000001&idtype=cvips&prog=normal
    • Vancouver

      Marques M, Ferreira LG, Teles LK, Scolfaro LMR. Monte Carlo simulations applied to "Al IND.X" "Ga IND.Y" "In IND.1-X-Y" X quaternary alloys (X=As, P, N): a comparative study [Internet]. Physical Review B. 2005 ; 71( 20): 205204/1-205204/11.[citado 2025 out. 31 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000071000020205204000001&idtype=cvips&prog=normal
  • Source: Applied Physics Letters. Unidade: IF

    Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA, MAGNETISMO

    Acesso à fonteAcesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      MARQUES, M et al. Magnetic properties of MnN: influence of strain and crystal structure. Applied Physics Letters, v. 86, n. 16, p. 164105/1-164105/3, 2005Tradução . . Disponível em: https://doi.org/10.1063/1.1905787. Acesso em: 31 out. 2025.
    • APA

      Marques, M., Teles, L. K., Scolfaro, L. M. R., Furthmüller, J., Bechstedt, F., & Ferreira, L. G. (2005). Magnetic properties of MnN: influence of strain and crystal structure. Applied Physics Letters, 86( 16), 164105/1-164105/3. doi:10.1063/1.1905787
    • NLM

      Marques M, Teles LK, Scolfaro LMR, Furthmüller J, Bechstedt F, Ferreira LG. Magnetic properties of MnN: influence of strain and crystal structure [Internet]. Applied Physics Letters. 2005 ; 86( 16): 164105/1-164105/3.[citado 2025 out. 31 ] Available from: https://doi.org/10.1063/1.1905787
    • Vancouver

      Marques M, Teles LK, Scolfaro LMR, Furthmüller J, Bechstedt F, Ferreira LG. Magnetic properties of MnN: influence of strain and crystal structure [Internet]. Applied Physics Letters. 2005 ; 86( 16): 164105/1-164105/3.[citado 2025 out. 31 ] Available from: https://doi.org/10.1063/1.1905787
  • Source: Journal of Crystal Growth. Unidade: IF

    Subjects: CRISTALOGRAFIA, DIFRAÇÃO POR RAIOS X

    Acesso à fonteHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      PACHECO-SALAZAR, D G et al. Growth and characterization of cubic. Journal of Crystal Growth, v. 284, n. 3-4, p. 379-387, 2005Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20. Acesso em: 31 out. 2025.
    • APA

      Pacheco-Salazar, D. G., Li, S. F., Cerdeira, F., Meneses, E. A., Leite, J. R., Scolfaro, L. M. R., et al. (2005). Growth and characterization of cubic. Journal of Crystal Growth, 284( 3-4), 379-387. Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20
    • NLM

      Pacheco-Salazar DG, Li SF, Cerdeira F, Meneses EA, Leite JR, Scolfaro LMR, As DJ, Lischka K. Growth and characterization of cubic [Internet]. Journal of Crystal Growth. 2005 ; 284( 3-4): 379-387.[citado 2025 out. 31 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20
    • Vancouver

      Pacheco-Salazar DG, Li SF, Cerdeira F, Meneses EA, Leite JR, Scolfaro LMR, As DJ, Lischka K. Growth and characterization of cubic [Internet]. Journal of Crystal Growth. 2005 ; 284( 3-4): 379-387.[citado 2025 out. 31 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20
  • Source: Journal of Crystal Growth. Unidade: IF

    Subjects: MATÉRIA CONDENSADA, CRISTALOGRAFIA, FEIXES, CRESCIMENTO DE CRISTAIS, ESTRUTURA ELETRÔNICA

    Acesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      LEITE, J. R. e SCOLFARO, Luisa Maria Ribeiro. Growth and characterization of cubic InxGa1-xN epilayers on two different types of substrate. Journal of Crystal Growth, v. 284, n. 3-4, p. 379-387, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.jcrysgro.2005.07.049. Acesso em: 31 out. 2025.
    • APA

      Leite, J. R., & Scolfaro, L. M. R. (2005). Growth and characterization of cubic InxGa1-xN epilayers on two different types of substrate. Journal of Crystal Growth, 284( 3-4), 379-387. doi:10.1016/j.jcrysgro.2005.07.049
    • NLM

      Leite JR, Scolfaro LMR. Growth and characterization of cubic InxGa1-xN epilayers on two different types of substrate [Internet]. Journal of Crystal Growth. 2005 ; 284( 3-4): 379-387.[citado 2025 out. 31 ] Available from: https://doi.org/10.1016/j.jcrysgro.2005.07.049
    • Vancouver

      Leite JR, Scolfaro LMR. Growth and characterization of cubic InxGa1-xN epilayers on two different types of substrate [Internet]. Journal of Crystal Growth. 2005 ; 284( 3-4): 379-387.[citado 2025 out. 31 ] Available from: https://doi.org/10.1016/j.jcrysgro.2005.07.049
  • Source: Microelectronics Journal. Unidades: IF, IFSC

    Subjects: SEMICONDUTORES, MATERIAIS NANOESTRUTURADOS, NANOTECNOLOGIA, ESTRUTURA DOS MATERIAIS

    Acesso à fonteHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      SILVA JUNIOR, E. F. da et al. Workshop of Semiconductor Nanodevices and Nanostructured Materials, 4 - NanoSemiMat. [Editorial]. Microelectronics Journal. Oxford: Instituto de Física, Universidade de São Paulo. Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1. Acesso em: 31 out. 2025. , 2005
    • APA

      Silva Junior, E. F. da, Henini, M., Scolfaro, L. M. R., & Sipahi, G. M. (2005). Workshop of Semiconductor Nanodevices and Nanostructured Materials, 4 - NanoSemiMat. [Editorial]. Microelectronics Journal. Oxford: Instituto de Física, Universidade de São Paulo. Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1
    • NLM

      Silva Junior EF da, Henini M, Scolfaro LMR, Sipahi GM. Workshop of Semiconductor Nanodevices and Nanostructured Materials, 4 - NanoSemiMat. [Editorial] [Internet]. Microelectronics Journal. 2005 ; No 2005( 11): 939.[citado 2025 out. 31 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1
    • Vancouver

      Silva Junior EF da, Henini M, Scolfaro LMR, Sipahi GM. Workshop of Semiconductor Nanodevices and Nanostructured Materials, 4 - NanoSemiMat. [Editorial] [Internet]. Microelectronics Journal. 2005 ; No 2005( 11): 939.[citado 2025 out. 31 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1
  • Source: Journal of Superconductivity. Unidades: IFSC, IF

    Subjects: MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA, SEMICONDUTORES

    Acesso à fonteHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      LIMA, Ivan Costa da Cunha et al. Controlling the charge and the spin polarization distributions in (In,Ga,Mn)As-based diluted magnetic semiconductor multilayered structures. Journal of Superconductivity, v. 18. n. 1, p. 61-67, 2005Tradução . . Disponível em: http://www.springerlink.com/media/99AJTVLWYGY6JC0UJN9M/Contributions/P/X/3/5/PX35337843273887.pdf. Acesso em: 31 out. 2025.
    • APA

      Lima, I. C. da C., Rodrigues, S. C. P., Sipahi, G. M., Scolfaro, L. M. R., & Leite, J. R. (2005). Controlling the charge and the spin polarization distributions in (In,Ga,Mn)As-based diluted magnetic semiconductor multilayered structures. Journal of Superconductivity, 18. n. 1, 61-67. Recuperado de http://www.springerlink.com/media/99AJTVLWYGY6JC0UJN9M/Contributions/P/X/3/5/PX35337843273887.pdf
    • NLM

      Lima IC da C, Rodrigues SCP, Sipahi GM, Scolfaro LMR, Leite JR. Controlling the charge and the spin polarization distributions in (In,Ga,Mn)As-based diluted magnetic semiconductor multilayered structures [Internet]. Journal of Superconductivity. 2005 ; 18. n. 1 61-67.[citado 2025 out. 31 ] Available from: http://www.springerlink.com/media/99AJTVLWYGY6JC0UJN9M/Contributions/P/X/3/5/PX35337843273887.pdf
    • Vancouver

      Lima IC da C, Rodrigues SCP, Sipahi GM, Scolfaro LMR, Leite JR. Controlling the charge and the spin polarization distributions in (In,Ga,Mn)As-based diluted magnetic semiconductor multilayered structures [Internet]. Journal of Superconductivity. 2005 ; 18. n. 1 61-67.[citado 2025 out. 31 ] Available from: http://www.springerlink.com/media/99AJTVLWYGY6JC0UJN9M/Contributions/P/X/3/5/PX35337843273887.pdf
  • Source: Microelectronics Journal. Unidade: IF

    Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES, MICROELETRÔNICA

    Acesso à fonteAcesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      RODRÍGUEZ COPPOLA, H et al. The absorption coefficient of low dimensional semiconductor systems: the photoluminescence of InGaN quantum dot. Microelectronics Journal, 2004Tradução . . Disponível em: https://doi.org/10.1016/j.mejo.2003.10.005. Acesso em: 31 out. 2025.
    • APA

      Rodríguez Coppola, H., Tutor Sánchez, J., Leite, J. R., Scolfaro, L. M. R., & García Moliner, F. (2004). The absorption coefficient of low dimensional semiconductor systems: the photoluminescence of InGaN quantum dot. Microelectronics Journal. doi:10.1016/j.mejo.2003.10.005
    • NLM

      Rodríguez Coppola H, Tutor Sánchez J, Leite JR, Scolfaro LMR, García Moliner F. The absorption coefficient of low dimensional semiconductor systems: the photoluminescence of InGaN quantum dot [Internet]. Microelectronics Journal. 2004 ;[citado 2025 out. 31 ] Available from: https://doi.org/10.1016/j.mejo.2003.10.005
    • Vancouver

      Rodríguez Coppola H, Tutor Sánchez J, Leite JR, Scolfaro LMR, García Moliner F. The absorption coefficient of low dimensional semiconductor systems: the photoluminescence of InGaN quantum dot [Internet]. Microelectronics Journal. 2004 ;[citado 2025 out. 31 ] Available from: https://doi.org/10.1016/j.mejo.2003.10.005
  • Source: Abstracts. Conference titles: International Conference on Physics and Applications of Spin-Related Phenomena in Semiconductors - PASPS. Unidades: IF, IFSC

    Subjects: SEMICONDUTORES, MAGNETISMO

    How to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      LIMA, Ivan C. da Cunha et al. Controlling the charge and the spin-polarization distribution in (In,Ga,Mn)As-based diluted magnetic semiconductor multilayered structures. 2004, Anais.. Santa Barbara: Instituto de Física, Universidade de São Paulo, 2004. . Acesso em: 31 out. 2025.
    • APA

      Lima, I. C. da C., Rodrigues, S. C. P., Scolfaro, L. M. R., Leite, J. R., & Sipahi, G. M. (2004). Controlling the charge and the spin-polarization distribution in (In,Ga,Mn)As-based diluted magnetic semiconductor multilayered structures. In Abstracts. Santa Barbara: Instituto de Física, Universidade de São Paulo.
    • NLM

      Lima IC da C, Rodrigues SCP, Scolfaro LMR, Leite JR, Sipahi GM. Controlling the charge and the spin-polarization distribution in (In,Ga,Mn)As-based diluted magnetic semiconductor multilayered structures. Abstracts. 2004 ;[citado 2025 out. 31 ]
    • Vancouver

      Lima IC da C, Rodrigues SCP, Scolfaro LMR, Leite JR, Sipahi GM. Controlling the charge and the spin-polarization distribution in (In,Ga,Mn)As-based diluted magnetic semiconductor multilayered structures. Abstracts. 2004 ;[citado 2025 out. 31 ]

Digital Library of Intellectual Production of Universidade de São Paulo     2012 - 2025