ReP USP - Resultado da busca

Trabalho de evento-resumo
Formation of InAs quantum dots on a pre-patterned GaAs surfaces prepared with a Ga+ focused ion beam (2014)
Sobreira, Fernando Wellysson de Alencar; Arakaki, Haroldo; Souza, Carlos Alberto de; Marega Junior, Euclydes
Source: Abstracts. Conference titles: International Conference on the Physics of Semiconductors - ICPS. Unidade: IFSC
Subjects: POÇOS QUÂNTICOS, SEMICONDUTORES
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ABNT
SOBREIRA, Fernando Wellysson de Alencar et al. Formation of InAs quantum dots on a pre-patterned GaAs surfaces prepared with a Ga+ focused ion beam. 2014, Anais.. London: International Union of Pure and Applied Physics - IUPAP, 2014. Disponível em: http://www.icps2014.org/abstracts/Posters_Material_Structure.pdf. Acesso em: 05 out. 2024.
APA
Sobreira, F. W. de A., Arakaki, H., Souza, C. A. de, & Marega Junior, E. (2014). Formation of InAs quantum dots on a pre-patterned GaAs surfaces prepared with a Ga+ focused ion beam. In Abstracts. London: International Union of Pure and Applied Physics - IUPAP. Recuperado de http://www.icps2014.org/abstracts/Posters_Material_Structure.pdf
NLM
Sobreira FW de A, Arakaki H, Souza CA de, Marega Junior E. Formation of InAs quantum dots on a pre-patterned GaAs surfaces prepared with a Ga+ focused ion beam [Internet]. Abstracts. 2014 ;[citado 2024 out. 05 ] Available from: http://www.icps2014.org/abstracts/Posters_Material_Structure.pdf
Vancouver
Sobreira FW de A, Arakaki H, Souza CA de, Marega Junior E. Formation of InAs quantum dots on a pre-patterned GaAs surfaces prepared with a Ga+ focused ion beam [Internet]. Abstracts. 2014 ;[citado 2024 out. 05 ] Available from: http://www.icps2014.org/abstracts/Posters_Material_Structure.pdf
Trabalho de evento-resumo
Photoluminescence of radial heterostructured GaAs/AIGaAs/GaAs nanowires (2014)
Pusep, Yuri A ; Guimarães, Francisco Eduardo Gontijo ; Caface, Raphael; Arakaki, Haroldo; Souza, Carlos Alberto de
Source: Abstracts. Conference titles: International Conference on the Physics of Semiconductors - ICPS. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, SEMICONDUTORES
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ABNT
PUSEP, Yuri A et al. Photoluminescence of radial heterostructured GaAs/AIGaAs/GaAs nanowires. 2014, Anais.. London: International Union of Pure and Applied Physics - IUPAP, 2014. Disponível em: http://www.icps2014.org/abstracts/Posters_Optical_Properties_of_Heterostructures_B.pdf. Acesso em: 05 out. 2024.
APA
Pusep, Y. A., Guimarães, F. E. G., Caface, R., Arakaki, H., & Souza, C. A. de. (2014). Photoluminescence of radial heterostructured GaAs/AIGaAs/GaAs nanowires. In Abstracts. London: International Union of Pure and Applied Physics - IUPAP. Recuperado de http://www.icps2014.org/abstracts/Posters_Optical_Properties_of_Heterostructures_B.pdf
NLM
Pusep YA, Guimarães FEG, Caface R, Arakaki H, Souza CA de. Photoluminescence of radial heterostructured GaAs/AIGaAs/GaAs nanowires [Internet]. Abstracts. 2014 ;[citado 2024 out. 05 ] Available from: http://www.icps2014.org/abstracts/Posters_Optical_Properties_of_Heterostructures_B.pdf
Vancouver
Pusep YA, Guimarães FEG, Caface R, Arakaki H, Souza CA de. Photoluminescence of radial heterostructured GaAs/AIGaAs/GaAs nanowires [Internet]. Abstracts. 2014 ;[citado 2024 out. 05 ] Available from: http://www.icps2014.org/abstracts/Posters_Optical_Properties_of_Heterostructures_B.pdf
Artigo de periodico
Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure (2014)
Barbosa, B. G.; Arakaki, Haroldo; Souza, Carlos Alberto de; Pusep, Yuri A
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: SEMICONDUTORES, NANOTECNOLOGIA
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ABNT
BARBOSA, B. G. et al. Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure. Journal of Applied Physics, v. 115, p. 114312-1-114312-5, 2014Tradução . . Disponível em: https://doi.org/10.1063/1.4869218. Acesso em: 05 out. 2024.
APA
Barbosa, B. G., Arakaki, H., Souza, C. A. de, & Pusep, Y. A. (2014). Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure. Journal of Applied Physics, 115, 114312-1-114312-5. doi:10.1063/1.4869218
NLM
Barbosa BG, Arakaki H, Souza CA de, Pusep YA. Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure [Internet]. Journal of Applied Physics. 2014 ; 115 114312-1-114312-5.[citado 2024 out. 05 ] Available from: https://doi.org/10.1063/1.4869218
Vancouver
Barbosa BG, Arakaki H, Souza CA de, Pusep YA. Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure [Internet]. Journal of Applied Physics. 2014 ; 115 114312-1-114312-5.[citado 2024 out. 05 ] Available from: https://doi.org/10.1063/1.4869218
Trabalho de evento-resumo
Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure (2014)
Pusep, Yuri A ; Barbosa, B. G.; Arakaki, Haroldo; Souza, Carlos Alberto de
Source: Abstracts Booklet. Conference titles: International Conference on Physics of Light-Matter Coupling in Nanostructures - PLMCN. Unidade: IFSC
Subjects: SEMICONDUTORES, NANOTECNOLOGIA
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ABNT
PUSEP, Yuri A et al. Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure. 2014, Anais.. Montpellier: Université Montpellier 2, Département Semiconducteurs, Matériaux et Capteurs, Laboratoire Charles Coulomb, 2014. . Acesso em: 05 out. 2024.
APA
Pusep, Y. A., Barbosa, B. G., Arakaki, H., & Souza, C. A. de. (2014). Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure. In Abstracts Booklet. Montpellier: Université Montpellier 2, Département Semiconducteurs, Matériaux et Capteurs, Laboratoire Charles Coulomb.
NLM
Pusep YA, Barbosa BG, Arakaki H, Souza CA de. Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure. Abstracts Booklet. 2014 ;[citado 2024 out. 05 ]
Vancouver
Pusep YA, Barbosa BG, Arakaki H, Souza CA de. Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure. Abstracts Booklet. 2014 ;[citado 2024 out. 05 ]
Trabalho de evento-resumo
Interaction of InAs QDs with surface plasmon polaritons (2013)
Sobreira, F. W. A.; Ferri, F. A.; Teodoro, M. D.; Arakaki, Haroldo; Souza, Carlos Alberto de; Marega Júnior, Euclydes
Source: Abstract Book. Conference titles: Brazilian Workshop on Semiconductor Physics - BWSP. Unidade: IFSC
Subjects: POÇOS QUÂNTICOS, SEMICONDUTORES, SISTEMA QUÂNTICO
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ABNT
SOBREIRA, F. W. A. et al. Interaction of InAs QDs with surface plasmon polaritons. 2013, Anais.. São Carlos: Instituto de Física de São Carlos - IFSC, 2013. Disponível em: http://www.bwsp16.ifsc.usp.br/www.bwsp16.ifsc.usp.br/downloads/AbstractBook16thBWSP.pdf. Acesso em: 05 out. 2024.
APA
Sobreira, F. W. A., Ferri, F. A., Teodoro, M. D., Arakaki, H., Souza, C. A. de, & Marega Júnior, E. (2013). Interaction of InAs QDs with surface plasmon polaritons. In Abstract Book. São Carlos: Instituto de Física de São Carlos - IFSC. Recuperado de http://www.bwsp16.ifsc.usp.br/www.bwsp16.ifsc.usp.br/downloads/AbstractBook16thBWSP.pdf
NLM
Sobreira FWA, Ferri FA, Teodoro MD, Arakaki H, Souza CA de, Marega Júnior E. Interaction of InAs QDs with surface plasmon polaritons [Internet]. Abstract Book. 2013 ;[citado 2024 out. 05 ] Available from: http://www.bwsp16.ifsc.usp.br/www.bwsp16.ifsc.usp.br/downloads/AbstractBook16thBWSP.pdf
Vancouver
Sobreira FWA, Ferri FA, Teodoro MD, Arakaki H, Souza CA de, Marega Júnior E. Interaction of InAs QDs with surface plasmon polaritons [Internet]. Abstract Book. 2013 ;[citado 2024 out. 05 ] Available from: http://www.bwsp16.ifsc.usp.br/www.bwsp16.ifsc.usp.br/downloads/AbstractBook16thBWSP.pdf
Artigo de periodico
Photoluminescence of radial heterostructured GaAs/AlGaAs/GaAs nanowires (2013)
Caface, R. A.; Guimarães, Francisco Eduardo Gontijo ; Arakaki, Haroldo; Souza, Carlos Alberto de; Pusep, Yuri A
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, MATERIAIS NANOESTRUTURADOS
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ABNT
CAFACE, R. A. et al. Photoluminescence of radial heterostructured GaAs/AlGaAs/GaAs nanowires. Journal of Applied Physics, v. 113, n. 6, p. 064315-1-064315-4, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4792301. Acesso em: 05 out. 2024.
APA
Caface, R. A., Guimarães, F. E. G., Arakaki, H., Souza, C. A. de, & Pusep, Y. A. (2013). Photoluminescence of radial heterostructured GaAs/AlGaAs/GaAs nanowires. Journal of Applied Physics, 113( 6), 064315-1-064315-4. doi:10.1063/1.4792301
NLM
Caface RA, Guimarães FEG, Arakaki H, Souza CA de, Pusep YA. Photoluminescence of radial heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Journal of Applied Physics. 2013 ; 113( 6): 064315-1-064315-4.[citado 2024 out. 05 ] Available from: https://doi.org/10.1063/1.4792301
Vancouver
Caface RA, Guimarães FEG, Arakaki H, Souza CA de, Pusep YA. Photoluminescence of radial heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Journal of Applied Physics. 2013 ; 113( 6): 064315-1-064315-4.[citado 2024 out. 05 ] Available from: https://doi.org/10.1063/1.4792301
Artigo de periodico
Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires (2013)
Pusep, Yuri A ; Arakaki, Haroldo; Souza, Carlos Alberto de; Rodrigues, A. D.; Haapamaki, C. M.; LaPierre, R. R.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, MATERIAIS NANOESTRUTURADOS
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ABNT
PUSEP, Yuri A et al. Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires. Journal of Applied Physics, v. 113, n. 16, p. 164311-1-164311-4, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4803494. Acesso em: 05 out. 2024.
APA
Pusep, Y. A., Arakaki, H., Souza, C. A. de, Rodrigues, A. D., Haapamaki, C. M., & LaPierre, R. R. (2013). Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires. Journal of Applied Physics, 113( 16), 164311-1-164311-4. doi:10.1063/1.4803494
NLM
Pusep YA, Arakaki H, Souza CA de, Rodrigues AD, Haapamaki CM, LaPierre RR. Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Journal of Applied Physics. 2013 ; 113( 16): 164311-1-164311-4.[citado 2024 out. 05 ] Available from: https://doi.org/10.1063/1.4803494
Vancouver
Pusep YA, Arakaki H, Souza CA de, Rodrigues AD, Haapamaki CM, LaPierre RR. Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Journal of Applied Physics. 2013 ; 113( 16): 164311-1-164311-4.[citado 2024 out. 05 ] Available from: https://doi.org/10.1063/1.4803494
Artigo de periodico
Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires (2013)
Guimarães, Francisco Eduardo Gontijo ; Caface, R. A.; Arakaki, Haroldo; Souza, Carlos Alberto de; Pusep, Yuri A
Source: Applied Physics Letters. Unidade: IFSC
Subjects: NANOTECNOLOGIA, SEMICONDUTORES
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ABNT
GUIMARÃES, Francisco Eduardo Gontijo et al. Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires. Applied Physics Letters, v. 103, n. 3, p. 033121-1-033121-3, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4816288. Acesso em: 05 out. 2024.
APA
Guimarães, F. E. G., Caface, R. A., Arakaki, H., Souza, C. A. de, & Pusep, Y. A. (2013). Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires. Applied Physics Letters, 103( 3), 033121-1-033121-3. doi:10.1063/1.4816288
NLM
Guimarães FEG, Caface RA, Arakaki H, Souza CA de, Pusep YA. Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Applied Physics Letters. 2013 ; 103( 3): 033121-1-033121-3.[citado 2024 out. 05 ] Available from: https://doi.org/10.1063/1.4816288
Vancouver
Guimarães FEG, Caface RA, Arakaki H, Souza CA de, Pusep YA. Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Applied Physics Letters. 2013 ; 103( 3): 033121-1-033121-3.[citado 2024 out. 05 ] Available from: https://doi.org/10.1063/1.4816288
Trabalho de evento-resumo
Photoluminescence of radial heterostrutured GaAs/AlGaAs/GaAs nanowires (2013)
Pusep, Yuri A ; Guimarães, Francisco Eduardo Gontijo ; Caface, R. A.; Arakaki, Haroldo; Souza, Carlos Alberto de
Source: Abstracts. Conference titles: International Conference on Optics of Excitons in Confined Systems - OECS. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, MATERIAIS NANOESTRUTURADOS, ESPECTROSCOPIA RAMAN
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ABNT
PUSEP, Yuri A et al. Photoluminescence of radial heterostrutured GaAs/AlGaAs/GaAs nanowires. 2013, Anais.. Rome: University of Rome II Tor Vergata, 2013. Disponível em: http://www.mifp.eu/OECS13/images/modules/OECS_2013_light.pdf. Acesso em: 05 out. 2024.
APA
Pusep, Y. A., Guimarães, F. E. G., Caface, R. A., Arakaki, H., & Souza, C. A. de. (2013). Photoluminescence of radial heterostrutured GaAs/AlGaAs/GaAs nanowires. In Abstracts. Rome: University of Rome II Tor Vergata. Recuperado de http://www.mifp.eu/OECS13/images/modules/OECS_2013_light.pdf
NLM
Pusep YA, Guimarães FEG, Caface RA, Arakaki H, Souza CA de. Photoluminescence of radial heterostrutured GaAs/AlGaAs/GaAs nanowires [Internet]. Abstracts. 2013 ;[citado 2024 out. 05 ] Available from: http://www.mifp.eu/OECS13/images/modules/OECS_2013_light.pdf
Vancouver
Pusep YA, Guimarães FEG, Caface RA, Arakaki H, Souza CA de. Photoluminescence of radial heterostrutured GaAs/AlGaAs/GaAs nanowires [Internet]. Abstracts. 2013 ;[citado 2024 out. 05 ] Available from: http://www.mifp.eu/OECS13/images/modules/OECS_2013_light.pdf
Artigo de periodico
PL spectroscopy of Fermi electrons in regime of the quantum Hall effect (2009)
Pusep, Yuri A ; Guimarães, Francisco Eduardo Gontijo ; Arakaki, Haroldo; Souza, Carlos Alberto de
Source: Journal of Luminescence. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, EFEITO HALL, CAMPO MAGNÉTICO, SUPERFÍCIES
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ABNT
PUSEP, Yuri A et al. PL spectroscopy of Fermi electrons in regime of the quantum Hall effect. Journal of Luminescence, v. 129, n. 12, p. 1948-1950, 2009Tradução . . Disponível em: https://doi.org/10.1016/j.jlumin.2009.04.084. Acesso em: 05 out. 2024.
APA
Pusep, Y. A., Guimarães, F. E. G., Arakaki, H., & Souza, C. A. de. (2009). PL spectroscopy of Fermi electrons in regime of the quantum Hall effect. Journal of Luminescence, 129( 12), 1948-1950. doi:10.1016/j.jlumin.2009.04.084
NLM
Pusep YA, Guimarães FEG, Arakaki H, Souza CA de. PL spectroscopy of Fermi electrons in regime of the quantum Hall effect [Internet]. Journal of Luminescence. 2009 ; 129( 12): 1948-1950.[citado 2024 out. 05 ] Available from: https://doi.org/10.1016/j.jlumin.2009.04.084
Vancouver
Pusep YA, Guimarães FEG, Arakaki H, Souza CA de. PL spectroscopy of Fermi electrons in regime of the quantum Hall effect [Internet]. Journal of Luminescence. 2009 ; 129( 12): 1948-1950.[citado 2024 out. 05 ] Available from: https://doi.org/10.1016/j.jlumin.2009.04.084
Artigo de periodico
Influence of interlayer tunneling on the quantized Hall phases in intentionally disordered multilayer structures (2009)
Pusep, Yuri A ; Rodriguez, A.; Arakaki, Haroldo; Souza, Carlos Alberto de
Source: Journal of Physics: Condensed Matter. Unidade: IFSC
Subjects: SEMICONDUTIVIDADE, CAMPO MAGNÉTICO, SEMICONDUTORES, DIAGRAMA DE TRANSFORMAÇÃO DE FASE, EFEITO HALL
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ABNT
PUSEP, Yuri A et al. Influence of interlayer tunneling on the quantized Hall phases in intentionally disordered multilayer structures. Journal of Physics: Condensed Matter, v. 21, n. 20, p. 205501-1-205501-7, 2009Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/21/20/205501. Acesso em: 05 out. 2024.
APA
Pusep, Y. A., Rodriguez, A., Arakaki, H., & Souza, C. A. de. (2009). Influence of interlayer tunneling on the quantized Hall phases in intentionally disordered multilayer structures. Journal of Physics: Condensed Matter, 21( 20), 205501-1-205501-7. doi:10.1088/0953-8984/21/20/205501
NLM
Pusep YA, Rodriguez A, Arakaki H, Souza CA de. Influence of interlayer tunneling on the quantized Hall phases in intentionally disordered multilayer structures [Internet]. Journal of Physics: Condensed Matter. 2009 ; 21( 20): 205501-1-205501-7.[citado 2024 out. 05 ] Available from: https://doi.org/10.1088/0953-8984/21/20/205501
Vancouver
Pusep YA, Rodriguez A, Arakaki H, Souza CA de. Influence of interlayer tunneling on the quantized Hall phases in intentionally disordered multilayer structures [Internet]. Journal of Physics: Condensed Matter. 2009 ; 21( 20): 205501-1-205501-7.[citado 2024 out. 05 ] Available from: https://doi.org/10.1088/0953-8984/21/20/205501
Trabalho de evento-resumo
PL spectroscopy of Fermi electrons in regime of the quantum Hall effect (2008)
Pusep, Yuri A ; Guimarães, Francisco Eduardo Gontijo ; Arakaki, Haroldo; Souza, Carlos Alberto de
Source: Abstracts. Conference titles: International Conference on Luminescence and Optical Spectroscopy of Condensed Matter ICL'08. Unidade: IFSC
Subjects: FÍSICA DA MATÉRIA CONDENSADA, SEMICONDUTORES, EFEITO HALL, FOTOLUMINESCÊNCIA, ESPECTROSCOPIA
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ABNT
PUSEP, Yuri A et al. PL spectroscopy of Fermi electrons in regime of the quantum Hall effect. 2008, Anais.. Lyon: Université de Lyon, 2008. . Acesso em: 05 out. 2024.
APA
Pusep, Y. A., Guimarães, F. E. G., Arakaki, H., & Souza, C. A. de. (2008). PL spectroscopy of Fermi electrons in regime of the quantum Hall effect. In Abstracts. Lyon: Université de Lyon.
NLM
Pusep YA, Guimarães FEG, Arakaki H, Souza CA de. PL spectroscopy of Fermi electrons in regime of the quantum Hall effect. Abstracts. 2008 ;[citado 2024 out. 05 ]
Vancouver
Pusep YA, Guimarães FEG, Arakaki H, Souza CA de. PL spectroscopy of Fermi electrons in regime of the quantum Hall effect. Abstracts. 2008 ;[citado 2024 out. 05 ]
Artigo de periodico
Spectroscopic evidence of extended states in quantized Hall phase of weakly coupled GaAs/AlGaAs multi-layers (2008)
Pusep, Yuri A ; Guimarães, Francisco Eduardo Gontijo ; Arakaki, Haroldo; Souza, Carlos Alberto de
Source: Physica E. Unidade: IFSC
Subjects: EFEITO HALL, SEMICONDUTIVIDADE
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ABNT
PUSEP, Yuri A et al. Spectroscopic evidence of extended states in quantized Hall phase of weakly coupled GaAs/AlGaAs multi-layers. Physica E, v. 40, n. 5, p. 1439-1441, 2008Tradução . . Disponível em: https://doi.org/10.1063/1.2978194. Acesso em: 05 out. 2024.
APA
Pusep, Y. A., Guimarães, F. E. G., Arakaki, H., & Souza, C. A. de. (2008). Spectroscopic evidence of extended states in quantized Hall phase of weakly coupled GaAs/AlGaAs multi-layers. Physica E, 40( 5), 1439-1441. doi:10.1063/1.2978194
NLM
Pusep YA, Guimarães FEG, Arakaki H, Souza CA de. Spectroscopic evidence of extended states in quantized Hall phase of weakly coupled GaAs/AlGaAs multi-layers [Internet]. Physica E. 2008 ; 40( 5): 1439-1441.[citado 2024 out. 05 ] Available from: https://doi.org/10.1063/1.2978194
Vancouver
Pusep YA, Guimarães FEG, Arakaki H, Souza CA de. Spectroscopic evidence of extended states in quantized Hall phase of weakly coupled GaAs/AlGaAs multi-layers [Internet]. Physica E. 2008 ; 40( 5): 1439-1441.[citado 2024 out. 05 ] Available from: https://doi.org/10.1063/1.2978194
Trabalho de evento-resumo
Spin-assisted interlayer percolation in quantum Hall multi-layer systems (2008)
Pusep, Yuri A ; Guimarães, Francisco Eduardo Gontijo ; Arakaki, Haroldo; Souza, Carlos Alberto de
Source: Abstracts Book. Conference titles: International Conference on Physics and Applications of Spin-Related Phenomena in Semiconductors - PASPS. Unidade: IFSC
Subjects: SEMICONDUTORES, SPIN, FÍSICA, EFEITO HALL, MAGNETISMO, CAMPO MAGNÉTICO
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ABNT
PUSEP, Yuri A et al. Spin-assisted interlayer percolation in quantum Hall multi-layer systems. 2008, Anais.. São Carlos: Instituto de Física de São Carlos - IFSC, 2008. Disponível em: http://www.pasps-v.com.br/arquivos/webbooklet2.pdf. Acesso em: 05 out. 2024.
APA
Pusep, Y. A., Guimarães, F. E. G., Arakaki, H., & Souza, C. A. de. (2008). Spin-assisted interlayer percolation in quantum Hall multi-layer systems. In Abstracts Book. São Carlos: Instituto de Física de São Carlos - IFSC. Recuperado de http://www.pasps-v.com.br/arquivos/webbooklet2.pdf
NLM
Pusep YA, Guimarães FEG, Arakaki H, Souza CA de. Spin-assisted interlayer percolation in quantum Hall multi-layer systems [Internet]. Abstracts Book. 2008 ;[citado 2024 out. 05 ] Available from: http://www.pasps-v.com.br/arquivos/webbooklet2.pdf
Vancouver
Pusep YA, Guimarães FEG, Arakaki H, Souza CA de. Spin-assisted interlayer percolation in quantum Hall multi-layer systems [Internet]. Abstracts Book. 2008 ;[citado 2024 out. 05 ] Available from: http://www.pasps-v.com.br/arquivos/webbooklet2.pdf
Trabalho de evento-resumo
Quantum Hall effect in random GaAs/AlGaAs superlattices (2008)
Pusep, Yuri A ; Rodríguez, Alberto; Arakaki, Haroldo; Souza, Carlos Alberto de
Source: Abstracts. Conference titles: General Conference of the Condensed Matter Division of the European Physical Society - CMD. Unidade: IFSC
Subjects: FÍSICA DA MATÉRIA CONDENSADA, SEMICONDUTORES, FILMES FINOS, EFEITO HALL
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ABNT
PUSEP, Yuri A et al. Quantum Hall effect in random GaAs/AlGaAs superlattices. 2008, Anais.. Roma: Università di Roma, 2008. . Acesso em: 05 out. 2024.
APA
Pusep, Y. A., Rodríguez, A., Arakaki, H., & Souza, C. A. de. (2008). Quantum Hall effect in random GaAs/AlGaAs superlattices. In Abstracts. Roma: Università di Roma.
NLM
Pusep YA, Rodríguez A, Arakaki H, Souza CA de. Quantum Hall effect in random GaAs/AlGaAs superlattices. Abstracts. 2008 ;[citado 2024 out. 05 ]
Vancouver
Pusep YA, Rodríguez A, Arakaki H, Souza CA de. Quantum Hall effect in random GaAs/AlGaAs superlattices. Abstracts. 2008 ;[citado 2024 out. 05 ]
Artigo de periodico
Spectroscopic evidence of extended states in the quantized Hall phase of weakly coupled GaAs/AlGaAs multilayers (2008)
Pusep, Yuri A ; Guimarães, Francisco Eduardo Gontijo ; Arakaki, Haroldo; Souza, Carlos Alberto de
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: EFEITO HALL, POÇOS QUÂNTICOS (ESTRUTURA), SEMICONDUTIVIDADE
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PUSEP, Yuri A et al. Spectroscopic evidence of extended states in the quantized Hall phase of weakly coupled GaAs/AlGaAs multilayers. Journal of Applied Physics, v. 104, p. 063702-1-063702-6, 2008Tradução . . Disponível em: https://doi.org/10.1016/j.physe.2007.09.036. Acesso em: 05 out. 2024.
APA
Pusep, Y. A., Guimarães, F. E. G., Arakaki, H., & Souza, C. A. de. (2008). Spectroscopic evidence of extended states in the quantized Hall phase of weakly coupled GaAs/AlGaAs multilayers. Journal of Applied Physics, 104, 063702-1-063702-6. doi:10.1016/j.physe.2007.09.036
NLM
Pusep YA, Guimarães FEG, Arakaki H, Souza CA de. Spectroscopic evidence of extended states in the quantized Hall phase of weakly coupled GaAs/AlGaAs multilayers [Internet]. Journal of Applied Physics. 2008 ; 104 063702-1-063702-6.[citado 2024 out. 05 ] Available from: https://doi.org/10.1016/j.physe.2007.09.036
Vancouver
Pusep YA, Guimarães FEG, Arakaki H, Souza CA de. Spectroscopic evidence of extended states in the quantized Hall phase of weakly coupled GaAs/AlGaAs multilayers [Internet]. Journal of Applied Physics. 2008 ; 104 063702-1-063702-6.[citado 2024 out. 05 ] Available from: https://doi.org/10.1016/j.physe.2007.09.036
Artigo de periodico
Disorder-driven coherence-incoherence crossover in random GaAs/'Al IND.0,3''Ga IND.0,7': as superlattices (2005)
Pusep, Yuri A ; Ribeiro, M. B.; Arakaki, Haroldo; Souza, Carlos Alberto de; Malzer, S.; Döhler, G. H.
Source: Physical Review B. Unidade: IFSC
Subjects: SEMICONDUTORES, CAMPO MAGNÉTICO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PUSEP, Yuri A et al. Disorder-driven coherence-incoherence crossover in random GaAs/'Al IND.0,3''Ga IND.0,7': as superlattices. Physical Review B, v. 71, n. Ja 2005, p. 035323-1-035323-6, 2005Tradução . . Acesso em: 05 out. 2024.
APA
Pusep, Y. A., Ribeiro, M. B., Arakaki, H., Souza, C. A. de, Malzer, S., & Döhler, G. H. (2005). Disorder-driven coherence-incoherence crossover in random GaAs/'Al IND.0,3''Ga IND.0,7': as superlattices. Physical Review B, 71( Ja 2005), 035323-1-035323-6.
NLM
Pusep YA, Ribeiro MB, Arakaki H, Souza CA de, Malzer S, Döhler GH. Disorder-driven coherence-incoherence crossover in random GaAs/'Al IND.0,3''Ga IND.0,7': as superlattices. Physical Review B. 2005 ; 71( Ja 2005): 035323-1-035323-6.[citado 2024 out. 05 ]
Vancouver
Pusep YA, Ribeiro MB, Arakaki H, Souza CA de, Malzer S, Döhler GH. Disorder-driven coherence-incoherence crossover in random GaAs/'Al IND.0,3''Ga IND.0,7': as superlattices. Physical Review B. 2005 ; 71( Ja 2005): 035323-1-035323-6.[citado 2024 out. 05 ]
Trabalho de evento-anais periodico
Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices (2005)
Pusep, Yuri A ; Guimarães, Francisco Eduardo Gontijo ; Ribeiro, M. B.; Arakaki, Haroldo; Souza, Carlos Alberto de; Malzer, S.; Döhler, G. H.
Source: AIP Conference Proceedings. Conference titles: International Conference on the Physics of Semiconductors - ICPS. Unidade: IFSC
Subjects: SEMICONDUTORES, FOTOLUMINESCÊNCIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PUSEP, Yuri A et al. Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices. AIP Conference Proceedings. Melville: American Institute of Physics - AIP. Disponível em: https://doi.org/10.1063/1.1994427. Acesso em: 05 out. 2024. , 2005
APA
Pusep, Y. A., Guimarães, F. E. G., Ribeiro, M. B., Arakaki, H., Souza, C. A. de, Malzer, S., & Döhler, G. H. (2005). Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices. AIP Conference Proceedings. Melville: American Institute of Physics - AIP. doi:10.1063/1.1994427
NLM
Pusep YA, Guimarães FEG, Ribeiro MB, Arakaki H, Souza CA de, Malzer S, Döhler GH. Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices [Internet]. AIP Conference Proceedings. 2005 ; 772( 1): 959-960.[citado 2024 out. 05 ] Available from: https://doi.org/10.1063/1.1994427
Vancouver
Pusep YA, Guimarães FEG, Ribeiro MB, Arakaki H, Souza CA de, Malzer S, Döhler GH. Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices [Internet]. AIP Conference Proceedings. 2005 ; 772( 1): 959-960.[citado 2024 out. 05 ] Available from: https://doi.org/10.1063/1.1994427
Trabalho de evento-resumo
Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices (2004)
Pusep, Yuri A ; Guimarães, Francisco Eduardo Gontijo ; Ribeiro, M. B.; Arakaki, Haroldo; Souza, Carlos Alberto de; Malzer, S.; Dahler, G. H.
Source: Abstracts. Conference titles: International Conference on the Physics of Semiconductors - ICPS. Unidade: IFSC
Subjects: SEMICONDUTORES, FOTOLUMINESCÊNCIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PUSEP, Yuri A et al. Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices. 2004, Anais.. Flagstaff: Instituto de Física de São Carlos, Universidade de São Paulo, 2004. . Acesso em: 05 out. 2024.
APA
Pusep, Y. A., Guimarães, F. E. G., Ribeiro, M. B., Arakaki, H., Souza, C. A. de, Malzer, S., & Dahler, G. H. (2004). Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices. In Abstracts. Flagstaff: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Pusep YA, Guimarães FEG, Ribeiro MB, Arakaki H, Souza CA de, Malzer S, Dahler GH. Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices. Abstracts. 2004 ;[citado 2024 out. 05 ]
Vancouver
Pusep YA, Guimarães FEG, Ribeiro MB, Arakaki H, Souza CA de, Malzer S, Dahler GH. Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices. Abstracts. 2004 ;[citado 2024 out. 05 ]
Artigo de periodico
Effect of compensation of electron and hole scattering potentials on the optical band edge of heavily doped GaAs/'Al IND.x''Ga IND.1-x'As superlattices (2004)
Pusep, Yuri A ; Guimarães, Francisco Eduardo Gontijo ; Ribeiro, M. B.; Arakaki, Haroldo; Souza, Carlos Alberto de; Malzer, S.; Döhler, G. H.
Source: Physical Review B. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PUSEP, Yuri A et al. Effect of compensation of electron and hole scattering potentials on the optical band edge of heavily doped GaAs/'Al IND.x''Ga IND.1-x'As superlattices. Physical Review B, v. 70, n. 9, p. Se 2004, 2004Tradução . . Acesso em: 05 out. 2024.
APA
Pusep, Y. A., Guimarães, F. E. G., Ribeiro, M. B., Arakaki, H., Souza, C. A. de, Malzer, S., & Döhler, G. H. (2004). Effect of compensation of electron and hole scattering potentials on the optical band edge of heavily doped GaAs/'Al IND.x''Ga IND.1-x'As superlattices. Physical Review B, 70( 9), Se 2004.
NLM
Pusep YA, Guimarães FEG, Ribeiro MB, Arakaki H, Souza CA de, Malzer S, Döhler GH. Effect of compensation of electron and hole scattering potentials on the optical band edge of heavily doped GaAs/'Al IND.x''Ga IND.1-x'As superlattices. Physical Review B. 2004 ; 70( 9): Se 2004.[citado 2024 out. 05 ]
Vancouver
Pusep YA, Guimarães FEG, Ribeiro MB, Arakaki H, Souza CA de, Malzer S, Döhler GH. Effect of compensation of electron and hole scattering potentials on the optical band edge of heavily doped GaAs/'Al IND.x''Ga IND.1-x'As superlattices. Physical Review B. 2004 ; 70( 9): Se 2004.[citado 2024 out. 05 ]

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