Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices (2005)
- Authors:
- USP affiliated authors: POUSSEP, IOURI - IFSC ; GUIMARÃES, FRANCISCO EDUARDO GONTIJO - IFSC ; ARAKAKI, HAROLDO - IFSC ; SOUZA, CARLOS ALBERTO DE - IFSC
- Unidade: IFSC
- DOI: 10.1063/1.1994427
- Subjects: SEMICONDUTORES; FOTOLUMINESCÊNCIA
- Language: Inglês
- Imprenta:
- Publisher: American Institute of Physics - AIP
- Publisher place: Melville
- Date published: 2005
- Source:
- Título: AIP Conference Proceedings
- ISSN: 0094-243X
- Volume/Número/Paginação/Ano: v. 772, n. 1, p. 959-960, June 2005
- Conference titles: International Conference on the Physics of Semiconductors - ICPS
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
PUSEP, Yuri A et al. Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices. AIP Conference Proceedings. Melville: American Institute of Physics - AIP. Disponível em: https://doi.org/10.1063/1.1994427. Acesso em: 29 dez. 2025. , 2005 -
APA
Pusep, Y. A., Guimarães, F. E. G., Ribeiro, M. B., Arakaki, H., Souza, C. A. de, Malzer, S., & Döhler, G. H. (2005). Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices. AIP Conference Proceedings. Melville: American Institute of Physics - AIP. doi:10.1063/1.1994427 -
NLM
Pusep YA, Guimarães FEG, Ribeiro MB, Arakaki H, Souza CA de, Malzer S, Döhler GH. Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices [Internet]. AIP Conference Proceedings. 2005 ; 772( 1): 959-960.[citado 2025 dez. 29 ] Available from: https://doi.org/10.1063/1.1994427 -
Vancouver
Pusep YA, Guimarães FEG, Ribeiro MB, Arakaki H, Souza CA de, Malzer S, Döhler GH. Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices [Internet]. AIP Conference Proceedings. 2005 ; 772( 1): 959-960.[citado 2025 dez. 29 ] Available from: https://doi.org/10.1063/1.1994427 - Photoluminescence of radial heterostrutured GaAs/AlGaAs/GaAs nanowires
- Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure
- PL spectroscopy of Fermi electrons in regime of the quantum Hall effect
- Photoluminescence of radial heterostructured GaAs/AIGaAs/GaAs nanowires
- PL spectroscopy of Fermi electrons in regime of the quantum Hall effect
- Photoluminescence of radial heterostructured GaAs/AlGaAs/GaAs nanowires
- Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires
- Spectroscopic evidence of extended states in the quantized Hall phase of weakly coupled GaAs/AlGaAs multilayers
- Spectroscopic evidence of extended states in quantized Hall phase of weakly coupled GaAs/AlGaAs multi-layers
- Spin-assisted interlayer percolation in quantum Hall multi-layer systems
Informações sobre o DOI: 10.1063/1.1994427 (Fonte: oaDOI API)
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