ReP USP - Resultado da busca

Trabalho de evento
Experimental and Simulation of 1T-DRAM Trend with the Gate Length on UTBOX Devices (2013)
Martino, João Antonio ; Nicoletti, Talitha; Sasaki, Katia Regina Akemi; Aoulaiche, Marc; Simoen, Eddy ; Claeys, Cor
Source: EUROSOI 2013. Conference titles: European Workshop on Silicon on Insulator Technology, Devices and Circuits. Unidade: EP
Assunto: MICROELETRÔNICA (CONGRESSOS)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MARTINO, João Antonio et al. Experimental and Simulation of 1T-DRAM Trend with the Gate Length on UTBOX Devices. 2013, Anais.. Paris: Institut Superieur d'Électronique, 2013. . Acesso em: 26 jan. 2026.
APA
Martino, J. A., Nicoletti, T., Sasaki, K. R. A., Aoulaiche, M., Simoen, E., & Claeys, C. (2013). Experimental and Simulation of 1T-DRAM Trend with the Gate Length on UTBOX Devices. In EUROSOI 2013. Paris: Institut Superieur d'Électronique.
NLM
Martino JA, Nicoletti T, Sasaki KRA, Aoulaiche M, Simoen E, Claeys C. Experimental and Simulation of 1T-DRAM Trend with the Gate Length on UTBOX Devices. EUROSOI 2013. 2013 ;[citado 2026 jan. 26 ]
Vancouver
Martino JA, Nicoletti T, Sasaki KRA, Aoulaiche M, Simoen E, Claeys C. Experimental and Simulation of 1T-DRAM Trend with the Gate Length on UTBOX Devices. EUROSOI 2013. 2013 ;[citado 2026 jan. 26 ]
Trabalho de evento
Low-frequency noise for different gate dielectrics on state-of-the-art UTBOX SOI nMOSFETs (2013)
Martino, João Antonio ; Santos, Sara Dereste dos; Simoen, Eddy ; Strobe, V.; Cretu, B.; Routoure, J.-M.; Carin, R.; Aoulaiche, Marc; Veloso, Anabela; Claeys, Cor
Source: EUROSOI 2013. Conference titles: European Workshop on Silicon on Insulator Technology, Devices and Circuits. Unidade: EP
Assunto: MICROELETRÔNICA (CONGRESSOS)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MARTINO, João Antonio et al. Low-frequency noise for different gate dielectrics on state-of-the-art UTBOX SOI nMOSFETs. 2013, Anais.. Paris: Institut Superieur d'Électronique, 2013. . Acesso em: 26 jan. 2026.
APA
Martino, J. A., Santos, S. D. dos, Simoen, E., Strobe, V., Cretu, B., Routoure, J. -M., et al. (2013). Low-frequency noise for different gate dielectrics on state-of-the-art UTBOX SOI nMOSFETs. In EUROSOI 2013. Paris: Institut Superieur d'Électronique.
NLM
Martino JA, Santos SD dos, Simoen E, Strobe V, Cretu B, Routoure J-M, Carin R, Aoulaiche M, Veloso A, Claeys C. Low-frequency noise for different gate dielectrics on state-of-the-art UTBOX SOI nMOSFETs. EUROSOI 2013. 2013 ;[citado 2026 jan. 26 ]
Vancouver
Martino JA, Santos SD dos, Simoen E, Strobe V, Cretu B, Routoure J-M, Carin R, Aoulaiche M, Veloso A, Claeys C. Low-frequency noise for different gate dielectrics on state-of-the-art UTBOX SOI nMOSFETs. EUROSOI 2013. 2013 ;[citado 2026 jan. 26 ]
Trabalho de evento
Low frequency noise assessment in advanced UTBOX SOI n-channel MOSFETs (2013)
Martino, João Antonio ; Strobel, V.; Cretu, B.; Santos, Sara Dereste dos; Simoen, Eddy ; Routure, J.-M.; Carin, R.; Aoulaiche, Marc; Claeys, Cor
Source: EUROSOI 2013. Conference titles: European Workshop on Silicon on Insulator Technology, Devices and Circuits. Unidade: EP
Assunto: MICROELETRÔNICA (CONGRESSOS)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MARTINO, João Antonio et al. Low frequency noise assessment in advanced UTBOX SOI n-channel MOSFETs. 2013, Anais.. Paris: Institut Superieur d'Électronique, 2013. . Acesso em: 26 jan. 2026.
APA
Martino, J. A., Strobel, V., Cretu, B., Santos, S. D. dos, Simoen, E., Routure, J. -M., et al. (2013). Low frequency noise assessment in advanced UTBOX SOI n-channel MOSFETs. In EUROSOI 2013. Paris: Institut Superieur d'Électronique.
NLM
Martino JA, Strobel V, Cretu B, Santos SD dos, Simoen E, Routure J-M, Carin R, Aoulaiche M, Claeys C. Low frequency noise assessment in advanced UTBOX SOI n-channel MOSFETs. EUROSOI 2013. 2013 ;[citado 2026 jan. 26 ]
Vancouver
Martino JA, Strobel V, Cretu B, Santos SD dos, Simoen E, Routure J-M, Carin R, Aoulaiche M, Claeys C. Low frequency noise assessment in advanced UTBOX SOI n-channel MOSFETs. EUROSOI 2013. 2013 ;[citado 2026 jan. 26 ]
Trabalho de evento
Experimental comparison between tensile and compressive uniaxially stressed MuGFETs under X-ray radiation (2013)
Martino, João Antonio ; Agopian, Paula Ghedini Der ; Peruzzi, V. V.; Gimenez, Salvador Pinillos ; Silveira, M. A. G.; Simoen, Eddy ; Claeys, Cor
Source: EUROSOI 2013. Conference titles: European Workshop on Silicon on Insulator Technology, Devices and Circuits. Unidade: EP
Assunto: MICROELETRÔNICA (CONGRESSOS)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MARTINO, João Antonio et al. Experimental comparison between tensile and compressive uniaxially stressed MuGFETs under X-ray radiation. 2013, Anais.. Paris: Institut Superieur d'Électronique, 2013. . Acesso em: 26 jan. 2026.
APA
Martino, J. A., Agopian, P. G. D., Peruzzi, V. V., Gimenez, S. P., Silveira, M. A. G., Simoen, E., & Claeys, C. (2013). Experimental comparison between tensile and compressive uniaxially stressed MuGFETs under X-ray radiation. In EUROSOI 2013. Paris: Institut Superieur d'Électronique.
NLM
Martino JA, Agopian PGD, Peruzzi VV, Gimenez SP, Silveira MAG, Simoen E, Claeys C. Experimental comparison between tensile and compressive uniaxially stressed MuGFETs under X-ray radiation. EUROSOI 2013. 2013 ;[citado 2026 jan. 26 ]
Vancouver
Martino JA, Agopian PGD, Peruzzi VV, Gimenez SP, Silveira MAG, Simoen E, Claeys C. Experimental comparison between tensile and compressive uniaxially stressed MuGFETs under X-ray radiation. EUROSOI 2013. 2013 ;[citado 2026 jan. 26 ]
Trabalho de evento
Improvement of Retention Time Using Pulsed Back Gate Bias on UTBOX SOI Memory Cell (2013)
Martino, João Antonio ; Sasaki, Katia Regina Akemi; Nissimoff, Albert; Almeida, Luciano Mendes; Aoulaiche, Marc; Simoen, Eddy ; Claeys, Cor
Source: EUROSOI 2013. Conference titles: European Workshop on Silicon on Insulator Technology, Devices and Circuits. Unidade: EP
Assunto: MICROELETRÔNICA (CONGRESSOS)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MARTINO, João Antonio et al. Improvement of Retention Time Using Pulsed Back Gate Bias on UTBOX SOI Memory Cell. 2013, Anais.. Paris: Institut Superieur d'Électronique, 2013. . Acesso em: 26 jan. 2026.
APA
Martino, J. A., Sasaki, K. R. A., Nissimoff, A., Almeida, L. M., Aoulaiche, M., Simoen, E., & Claeys, C. (2013). Improvement of Retention Time Using Pulsed Back Gate Bias on UTBOX SOI Memory Cell. In EUROSOI 2013. Paris: Institut Superieur d'Électronique.
NLM
Martino JA, Sasaki KRA, Nissimoff A, Almeida LM, Aoulaiche M, Simoen E, Claeys C. Improvement of Retention Time Using Pulsed Back Gate Bias on UTBOX SOI Memory Cell. EUROSOI 2013. 2013 ;[citado 2026 jan. 26 ]
Vancouver
Martino JA, Sasaki KRA, Nissimoff A, Almeida LM, Aoulaiche M, Simoen E, Claeys C. Improvement of Retention Time Using Pulsed Back Gate Bias on UTBOX SOI Memory Cell. EUROSOI 2013. 2013 ;[citado 2026 jan. 26 ]
Trabalho de evento-anais periodico
Study of the Main Digital and Analog Parameters of Underlapped MuGFETs (2012)
Martino, João Antonio ; Santos, Sara Dereste dos; Nicoletti, Talitha; Aoulaiche, Marc; Simoen, Eddy ; Claeys, Cor
Source: VIII Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits. Conference titles: European Workshop on Silicon on Insulator Technology, Devices and Circuits. Unidade: EP
Assunto: MICROELETRÔNICA (CONGRESSOS)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MARTINO, João Antonio et al. Study of the Main Digital and Analog Parameters of Underlapped MuGFETs. VIII Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits. S.l: Institut d'Électronique. . Acesso em: 26 jan. 2026. , 2012
APA
Martino, J. A., Santos, S. D. dos, Nicoletti, T., Aoulaiche, M., Simoen, E., & Claeys, C. (2012). Study of the Main Digital and Analog Parameters of Underlapped MuGFETs. VIII Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits. S.l: Institut d'Électronique.
NLM
Martino JA, Santos SD dos, Nicoletti T, Aoulaiche M, Simoen E, Claeys C. Study of the Main Digital and Analog Parameters of Underlapped MuGFETs. VIII Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits. 2012 ;[citado 2026 jan. 26 ]
Vancouver
Martino JA, Santos SD dos, Nicoletti T, Aoulaiche M, Simoen E, Claeys C. Study of the Main Digital and Analog Parameters of Underlapped MuGFETs. VIII Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits. 2012 ;[citado 2026 jan. 26 ]

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