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Artigo de periodico
An alternative experimental approach to produce rare-earth-doped SiOx films (2016)
Zanatta, Antonio Ricardo
Fonte: Journal of Applied Physics. Unidade: IFSC
Assuntos: MATERIAIS NANOESTRUTURADOS, MATÉRIA CONDENSADA
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ABNT
ZANATTA, Antonio Ricardo. An alternative experimental approach to produce rare-earth-doped SiOx films. Journal of Applied Physics, v. 119, n. 14, p. 145302-1-145302-5, 2016Tradução . . Disponível em: https://doi.org/10.1063/1.4945677. Acesso em: 01 jul. 2024.
APA
Zanatta, A. R. (2016). An alternative experimental approach to produce rare-earth-doped SiOx films. Journal of Applied Physics, 119( 14), 145302-1-145302-5. doi:10.1063/1.4945677
NLM
Zanatta AR. An alternative experimental approach to produce rare-earth-doped SiOx films [Internet]. Journal of Applied Physics. 2016 ; 119( 14): 145302-1-145302-5.[citado 2024 jul. 01 ] Available from: https://doi.org/10.1063/1.4945677
Vancouver
Zanatta AR. An alternative experimental approach to produce rare-earth-doped SiOx films [Internet]. Journal of Applied Physics. 2016 ; 119( 14): 145302-1-145302-5.[citado 2024 jul. 01 ] Available from: https://doi.org/10.1063/1.4945677
Artigo de periodico
Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor (2015)
Scoca, D.; Morales, M.; Merlo, R.; Alvarez, F.; Zanatta, Antonio Ricardo
Fonte: Journal of Applied Physics. Unidade: IFSC
Assuntos: FOTOLUMINESCÊNCIA, FILMES FINOS
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ABNT
SCOCA, D. et al. Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor. Journal of Applied Physics, v. 117, n. 20, p. 205304-1-205304-6, 2015Tradução . . Disponível em: https://doi.org/10.1063/1.4921809. Acesso em: 01 jul. 2024.
APA
Scoca, D., Morales, M., Merlo, R., Alvarez, F., & Zanatta, A. R. (2015). Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor. Journal of Applied Physics, 117( 20), 205304-1-205304-6. doi:10.1063/1.4921809
NLM
Scoca D, Morales M, Merlo R, Alvarez F, Zanatta AR. Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor [Internet]. Journal of Applied Physics. 2015 ; 117( 20): 205304-1-205304-6.[citado 2024 jul. 01 ] Available from: https://doi.org/10.1063/1.4921809
Vancouver
Scoca D, Morales M, Merlo R, Alvarez F, Zanatta AR. Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor [Internet]. Journal of Applied Physics. 2015 ; 117( 20): 205304-1-205304-6.[citado 2024 jul. 01 ] Available from: https://doi.org/10.1063/1.4921809
Artigo de periodico
On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon (2014)
Zanatta, Antonio Ricardo; Kordesch, M. E.
Fonte: Journal of Applied Physics. Unidade: IFSC
Assuntos: SILÍCIO, ALUMÍNIO, FILMES FINOS (COMPOSIÇÃO;ESTRUTURA;PROPRIEDADES)
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ZANATTA, Antonio Ricardo e KORDESCH, M. E. On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon. Journal of Applied Physics, v. 116, n. 7, p. 073511-1-073511-7, 2014Tradução . . Disponível em: https://doi.org/10.1063/1.4893654. Acesso em: 01 jul. 2024.
APA
Zanatta, A. R., & Kordesch, M. E. (2014). On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon. Journal of Applied Physics, 116( 7), 073511-1-073511-7. doi:10.1063/1.4893654
NLM
Zanatta AR, Kordesch ME. On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon [Internet]. Journal of Applied Physics. 2014 ; 116( 7): 073511-1-073511-7.[citado 2024 jul. 01 ] Available from: https://doi.org/10.1063/1.4893654
Vancouver
Zanatta AR, Kordesch ME. On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon [Internet]. Journal of Applied Physics. 2014 ; 116( 7): 073511-1-073511-7.[citado 2024 jul. 01 ] Available from: https://doi.org/10.1063/1.4893654
Artigo de periodico
Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases (2014)
Zanatta, Antonio Ricardo; Ingram, D. C.; Kordesch, M. E.
Fonte: Journal of Applied Physics. Unidade: IFSC
Assuntos: NÍQUEL, SEMICONDUTORES, DIFRAÇÃO POR RAIOS X, CRISTALIZAÇÃO, FILMES FINOS (COMPOSIÇÃO;ESTRUTURA;PROPRIEDADES)
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ABNT
ZANATTA, Antonio Ricardo e INGRAM, D. C. e KORDESCH, M. E. Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases. Journal of Applied Physics, v. 116, n. 12, p. 123508-1-123508-6, 2014Tradução . . Disponível em: https://doi.org/10.1063/1.4896589. Acesso em: 01 jul. 2024.
APA
Zanatta, A. R., Ingram, D. C., & Kordesch, M. E. (2014). Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases. Journal of Applied Physics, 116( 12), 123508-1-123508-6. doi:10.1063/1.4896589
NLM
Zanatta AR, Ingram DC, Kordesch ME. Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases [Internet]. Journal of Applied Physics. 2014 ; 116( 12): 123508-1-123508-6.[citado 2024 jul. 01 ] Available from: https://doi.org/10.1063/1.4896589
Vancouver
Zanatta AR, Ingram DC, Kordesch ME. Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases [Internet]. Journal of Applied Physics. 2014 ; 116( 12): 123508-1-123508-6.[citado 2024 jul. 01 ] Available from: https://doi.org/10.1063/1.4896589
Artigo de periodico
Concentration quenching of the green photoluminescence from terbium ions embedded in AlN and SiC matrices (2013)
Benz, Felix; Guerra, J. Andrés; Weng, Ye; Zanatta, Antonio Ricardo; Weingärtner, Roland; Strunk, Horst P.
Fonte: Journal of Luminescence. Unidade: IFSC
Assuntos: TÉRBIO, ALUMÍNIO, NITRATOS, FOTOLUMINESCÊNCIA
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ABNT
BENZ, Felix et al. Concentration quenching of the green photoluminescence from terbium ions embedded in AlN and SiC matrices. Journal of Luminescence, v. 137, p. 73-76, 2013Tradução . . Disponível em: https://doi.org/10.1016/j.jlumin.2012.12.028. Acesso em: 01 jul. 2024.
APA
Benz, F., Guerra, J. A., Weng, Y., Zanatta, A. R., Weingärtner, R., & Strunk, H. P. (2013). Concentration quenching of the green photoluminescence from terbium ions embedded in AlN and SiC matrices. Journal of Luminescence, 137, 73-76. doi:10.1016/j.jlumin.2012.12.028
NLM
Benz F, Guerra JA, Weng Y, Zanatta AR, Weingärtner R, Strunk HP. Concentration quenching of the green photoluminescence from terbium ions embedded in AlN and SiC matrices [Internet]. Journal of Luminescence. 2013 ; 137 73-76.[citado 2024 jul. 01 ] Available from: https://doi.org/10.1016/j.jlumin.2012.12.028
Vancouver
Benz F, Guerra JA, Weng Y, Zanatta AR, Weingärtner R, Strunk HP. Concentration quenching of the green photoluminescence from terbium ions embedded in AlN and SiC matrices [Internet]. Journal of Luminescence. 2013 ; 137 73-76.[citado 2024 jul. 01 ] Available from: https://doi.org/10.1016/j.jlumin.2012.12.028
Artigo de periodico
A simple-versatile approach to achieve all-Si-based optical micro-cavities (2013)
Gallo, I. B.; Zanatta, Antonio Ricardo
Fonte: Journal of Applied Physics. Unidade: IFSC
Assuntos: FILMES FINOS, ÓPTICA, SILÍCIO
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ABNT
GALLO, I. B. e ZANATTA, Antonio Ricardo. A simple-versatile approach to achieve all-Si-based optical micro-cavities. Journal of Applied Physics, v. 113, n. 8, p. 083106-1-083106-7, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4793592. Acesso em: 01 jul. 2024.
APA
Gallo, I. B., & Zanatta, A. R. (2013). A simple-versatile approach to achieve all-Si-based optical micro-cavities. Journal of Applied Physics, 113( 8), 083106-1-083106-7. doi:10.1063/1.4793592
NLM
Gallo IB, Zanatta AR. A simple-versatile approach to achieve all-Si-based optical micro-cavities [Internet]. Journal of Applied Physics. 2013 ; 113( 8): 083106-1-083106-7.[citado 2024 jul. 01 ] Available from: https://doi.org/10.1063/1.4793592
Vancouver
Gallo IB, Zanatta AR. A simple-versatile approach to achieve all-Si-based optical micro-cavities [Internet]. Journal of Applied Physics. 2013 ; 113( 8): 083106-1-083106-7.[citado 2024 jul. 01 ] Available from: https://doi.org/10.1063/1.4793592
Artigo de periodico
The thermo optic coefficient of amorphous SIN films in the near-infrared and visible regions and its experimental determination (2013)
Zanatta, Antonio Ricardo; Gallo, Ivan B.
Fonte: Applied Physics Express. Unidade: IFSC
Assuntos: FILMES FINOS, FIBRAS ÓPTICAS, POLÍMEROS (MATERIAIS)
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ABNT
ZANATTA, Antonio Ricardo e GALLO, Ivan B. The thermo optic coefficient of amorphous SIN films in the near-infrared and visible regions and its experimental determination. Applied Physics Express, v. 6, n. 4, p. 042402-1-042402-4, 2013Tradução . . Disponível em: https://doi.org/10.7567/APEX.6.042402. Acesso em: 01 jul. 2024.
APA
Zanatta, A. R., & Gallo, I. B. (2013). The thermo optic coefficient of amorphous SIN films in the near-infrared and visible regions and its experimental determination. Applied Physics Express, 6( 4), 042402-1-042402-4. doi:10.7567/APEX.6.042402
NLM
Zanatta AR, Gallo IB. The thermo optic coefficient of amorphous SIN films in the near-infrared and visible regions and its experimental determination [Internet]. Applied Physics Express. 2013 ; 6( 4): 042402-1-042402-4.[citado 2024 jul. 01 ] Available from: https://doi.org/10.7567/APEX.6.042402
Vancouver
Zanatta AR, Gallo IB. The thermo optic coefficient of amorphous SIN films in the near-infrared and visible regions and its experimental determination [Internet]. Applied Physics Express. 2013 ; 6( 4): 042402-1-042402-4.[citado 2024 jul. 01 ] Available from: https://doi.org/10.7567/APEX.6.042402
Artigo de periodico
Efficient 1535 nm light emission from an all-Si-based optical micro-cavity containing Er3+ and Yb3+ ions (2013)
Gallo, I. B.; Braud, A.; Zanatta, Antonio Ricardo
Fonte: Optics Express. Unidade: IFSC
Assuntos: FILMES FINOS, LUMINESCÊNCIA
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ABNT
GALLO, I. B. e BRAUD, A. e ZANATTA, Antonio Ricardo. Efficient 1535 nm light emission from an all-Si-based optical micro-cavity containing Er3+ and Yb3+ ions. Optics Express, v. No 2013, n. 23, p. 28394-28402, 2013Tradução . . Disponível em: https://doi.org/10.1364/OE.21.028394. Acesso em: 01 jul. 2024.
APA
Gallo, I. B., Braud, A., & Zanatta, A. R. (2013). Efficient 1535 nm light emission from an all-Si-based optical micro-cavity containing Er3+ and Yb3+ ions. Optics Express, No 2013( 23), 28394-28402. doi:10.1364/OE.21.028394
NLM
Gallo IB, Braud A, Zanatta AR. Efficient 1535 nm light emission from an all-Si-based optical micro-cavity containing Er3+ and Yb3+ ions [Internet]. Optics Express. 2013 ; No 2013( 23): 28394-28402.[citado 2024 jul. 01 ] Available from: https://doi.org/10.1364/OE.21.028394
Vancouver
Gallo IB, Braud A, Zanatta AR. Efficient 1535 nm light emission from an all-Si-based optical micro-cavity containing Er3+ and Yb3+ ions [Internet]. Optics Express. 2013 ; No 2013( 23): 28394-28402.[citado 2024 jul. 01 ] Available from: https://doi.org/10.1364/OE.21.028394
Trabalho de evento-anais periodico
Enhancement of optical absorption by modulation of the oxygen flow of 'TI''O IND. 2' films deposited by reactive sputtering (2012)
Pereira, André L. J.; Lisboa Filho, Paulo N.; Acuña, Javier; Brandt, Iuri S.; Pasa, André A.; Zanatta, Antonio Ricardo; Vilcarromero, Johnny; Beltrán, Armando; Silva, José H. Dias da
Fonte: Journal of Applied Physics. Nome do evento: International Conference on the Study of Matter at Extreme Conditions - SMEC. Unidade: IFSC
Assuntos: OXIGÊNIO (FLUXO), ÓPTICA, FILMES FINOS
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ABNT
PEREIRA, André L. J. et al. Enhancement of optical absorption by modulation of the oxygen flow of 'TI''O IND. 2' films deposited by reactive sputtering. Journal of Applied Physics. College Park: American Institute of Physics - AIP. Disponível em: https://doi.org/10.1063/1.4724334. Acesso em: 01 jul. 2024. , 2012
APA
Pereira, A. L. J., Lisboa Filho, P. N., Acuña, J., Brandt, I. S., Pasa, A. A., Zanatta, A. R., et al. (2012). Enhancement of optical absorption by modulation of the oxygen flow of 'TI''O IND. 2' films deposited by reactive sputtering. Journal of Applied Physics. College Park: American Institute of Physics - AIP. doi:10.1063/1.4724334
NLM
Pereira ALJ, Lisboa Filho PN, Acuña J, Brandt IS, Pasa AA, Zanatta AR, Vilcarromero J, Beltrán A, Silva JHD da. Enhancement of optical absorption by modulation of the oxygen flow of 'TI''O IND. 2' films deposited by reactive sputtering [Internet]. Journal of Applied Physics. 2012 ; 111( 11): 113513-1-113513-11.[citado 2024 jul. 01 ] Available from: https://doi.org/10.1063/1.4724334
Vancouver
Pereira ALJ, Lisboa Filho PN, Acuña J, Brandt IS, Pasa AA, Zanatta AR, Vilcarromero J, Beltrán A, Silva JHD da. Enhancement of optical absorption by modulation of the oxygen flow of 'TI''O IND. 2' films deposited by reactive sputtering [Internet]. Journal of Applied Physics. 2012 ; 111( 11): 113513-1-113513-11.[citado 2024 jul. 01 ] Available from: https://doi.org/10.1063/1.4724334
Artigo de periodico
Visible light emission and energy transfer processes in 'SM'-doped nitride films (2012)
Zanatta, Antonio Ricardo
Fonte: Journal of Applied Physics. Unidade: IFSC
Assuntos: ENERGIA (TRANSFERÊNCIA), ÍONS, ÉRBIO, EMISSÃO DA LUZ
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ABNT
ZANATTA, Antonio Ricardo. Visible light emission and energy transfer processes in 'SM'-doped nitride films. Journal of Applied Physics, v. 111, n. Ju 2012, p. 123105-1-123105-8, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.4729911. Acesso em: 01 jul. 2024.
APA
Zanatta, A. R. (2012). Visible light emission and energy transfer processes in 'SM'-doped nitride films. Journal of Applied Physics, 111( Ju 2012), 123105-1-123105-8. doi:10.1063/1.4729911
NLM
Zanatta AR. Visible light emission and energy transfer processes in 'SM'-doped nitride films [Internet]. Journal of Applied Physics. 2012 ; 111( Ju 2012): 123105-1-123105-8.[citado 2024 jul. 01 ] Available from: https://doi.org/10.1063/1.4729911
Vancouver
Zanatta AR. Visible light emission and energy transfer processes in 'SM'-doped nitride films [Internet]. Journal of Applied Physics. 2012 ; 111( Ju 2012): 123105-1-123105-8.[citado 2024 jul. 01 ] Available from: https://doi.org/10.1063/1.4729911
Artigo de periodico
Tailored SERS substrates obtained with cathodic arc plasma ion implantation of gold nanoparticles into a polymer matrix (2012)
Ferreira, Jacqueline; Teixeira, Fernanda S ; Zanatta, Antonio Ricardo ; Salvadori, Maria Cecília Barbosa da Silveira ; Gordon, Reuven; Oliveira Junior, Osvaldo Novais de
Fonte: Physical Chemistry Chemical Physics. Unidades: IF, IFSC
Assuntos: POLÍMEROS (MATERIAIS), FILMES FINOS, NANOTECNOLOGIA
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ABNT
FERREIRA, Jacqueline et al. Tailored SERS substrates obtained with cathodic arc plasma ion implantation of gold nanoparticles into a polymer matrix. Physical Chemistry Chemical Physics, v. 14, n. 6, p. 2050-2055, 2012Tradução . . Disponível em: https://doi.org/10.1039/c2cp23287a. Acesso em: 01 jul. 2024.
APA
Ferreira, J., Teixeira, F. S., Zanatta, A. R., Salvadori, M. C. B. da S., Gordon, R., & Oliveira Junior, O. N. de. (2012). Tailored SERS substrates obtained with cathodic arc plasma ion implantation of gold nanoparticles into a polymer matrix. Physical Chemistry Chemical Physics, 14( 6), 2050-2055. doi:10.1039/c2cp23287a
NLM
Ferreira J, Teixeira FS, Zanatta AR, Salvadori MCB da S, Gordon R, Oliveira Junior ON de. Tailored SERS substrates obtained with cathodic arc plasma ion implantation of gold nanoparticles into a polymer matrix [Internet]. Physical Chemistry Chemical Physics. 2012 ; 14( 6): 2050-2055.[citado 2024 jul. 01 ] Available from: https://doi.org/10.1039/c2cp23287a
Vancouver
Ferreira J, Teixeira FS, Zanatta AR, Salvadori MCB da S, Gordon R, Oliveira Junior ON de. Tailored SERS substrates obtained with cathodic arc plasma ion implantation of gold nanoparticles into a polymer matrix [Internet]. Physical Chemistry Chemical Physics. 2012 ; 14( 6): 2050-2055.[citado 2024 jul. 01 ] Available from: https://doi.org/10.1039/c2cp23287a
Artigo de periodico
Effect of ''O IND. 2' POT. +', ''H IND. 2' POT. +' + ''O IND. 2' POT. +', and ''N IND. 2' POT.+' + ''O IND. 2'POT. +' ion-beam irradiation on the field emission properties of carbon nanotubes (2011)
Acuña, J. J. S.; Escobar, M.; Goyanes, S. N.; Candal, R. J.; Zanatta, Antonio Ricardo; Alvarez, F.
Fonte: Journal of Applied Physics. Unidade: IFSC
Assuntos: FILMES FINOS, NANOTECNOLOGIA, NANOPARTÍCULAS, ESPECTROSCOPIA
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ABNT
ACUÑA, J. J. S. et al. Effect of ''O IND. 2' POT. +', ''H IND. 2' POT. +' + ''O IND. 2' POT. +', and ''N IND. 2' POT.+' + ''O IND. 2'POT. +' ion-beam irradiation on the field emission properties of carbon nanotubes. Journal of Applied Physics, v. 109, n. 11, p. 114317-1-114317-7, 2011Tradução . . Disponível em: https://doi.org/10.1063/1.3593269. Acesso em: 01 jul. 2024.
APA
Acuña, J. J. S., Escobar, M., Goyanes, S. N., Candal, R. J., Zanatta, A. R., & Alvarez, F. (2011). Effect of ''O IND. 2' POT. +', ''H IND. 2' POT. +' + ''O IND. 2' POT. +', and ''N IND. 2' POT.+' + ''O IND. 2'POT. +' ion-beam irradiation on the field emission properties of carbon nanotubes. Journal of Applied Physics, 109( 11), 114317-1-114317-7. doi:10.1063/1.3593269
NLM
Acuña JJS, Escobar M, Goyanes SN, Candal RJ, Zanatta AR, Alvarez F. Effect of ''O IND. 2' POT. +', ''H IND. 2' POT. +' + ''O IND. 2' POT. +', and ''N IND. 2' POT.+' + ''O IND. 2'POT. +' ion-beam irradiation on the field emission properties of carbon nanotubes [Internet]. Journal of Applied Physics. 2011 ; 109( 11): 114317-1-114317-7.[citado 2024 jul. 01 ] Available from: https://doi.org/10.1063/1.3593269
Vancouver
Acuña JJS, Escobar M, Goyanes SN, Candal RJ, Zanatta AR, Alvarez F. Effect of ''O IND. 2' POT. +', ''H IND. 2' POT. +' + ''O IND. 2' POT. +', and ''N IND. 2' POT.+' + ''O IND. 2'POT. +' ion-beam irradiation on the field emission properties of carbon nanotubes [Internet]. Journal of Applied Physics. 2011 ; 109( 11): 114317-1-114317-7.[citado 2024 jul. 01 ] Available from: https://doi.org/10.1063/1.3593269
Artigo de periodico
Structural-electronic aspects related to the near-infrared light emission of Fe-doped silicon films (2011)
Gallo, I. B.; Zanatta, Antonio Ricardo
Fonte: Solid State Communications. Unidade: IFSC
Assuntos: ÓPTICA (PROPRIEDADES), FILMES FINOS, EMISSÃO DA LUZ, LUMINESCÊNCIA
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ABNT
GALLO, I. B. e ZANATTA, Antonio Ricardo. Structural-electronic aspects related to the near-infrared light emission of Fe-doped silicon films. Solid State Communications, v. 151, n. 8, p. 587-590, 2011Tradução . . Disponível em: https://doi.org/10.1016/j.ssc.2011.02.012. Acesso em: 01 jul. 2024.
APA
Gallo, I. B., & Zanatta, A. R. (2011). Structural-electronic aspects related to the near-infrared light emission of Fe-doped silicon films. Solid State Communications, 151( 8), 587-590. doi:10.1016/j.ssc.2011.02.012
NLM
Gallo IB, Zanatta AR. Structural-electronic aspects related to the near-infrared light emission of Fe-doped silicon films [Internet]. Solid State Communications. 2011 ; 151( 8): 587-590.[citado 2024 jul. 01 ] Available from: https://doi.org/10.1016/j.ssc.2011.02.012
Vancouver
Gallo IB, Zanatta AR. Structural-electronic aspects related to the near-infrared light emission of Fe-doped silicon films [Internet]. Solid State Communications. 2011 ; 151( 8): 587-590.[citado 2024 jul. 01 ] Available from: https://doi.org/10.1016/j.ssc.2011.02.012
Artigo de periodico
Influence of film thickness on the optical transmission through subwavelength single slits in metallic thin films (2011)
Ferri, Fabio A.; Rivera, Victor A. G.; Osorio, Sérgio P. A.; Silva, Otávio B.; Zanatta, Antonio Ricardo; Borges, Ben-Hur Viana; Weiner, John; Marega Júnior, Euclydes
Fonte: Applied Optics. Unidades: IFSC, EESC
Assuntos: FILMES FINOS, ÓPTICA (PROPRIEDADES), OURO
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ABNT
FERRI, Fabio A. et al. Influence of film thickness on the optical transmission through subwavelength single slits in metallic thin films. Applied Optics, v. No 2011, n. 31, p. G11-G16, 2011Tradução . . Disponível em: https://doi.org/10.1364/AO.50.000G11. Acesso em: 01 jul. 2024.
APA
Ferri, F. A., Rivera, V. A. G., Osorio, S. P. A., Silva, O. B., Zanatta, A. R., Borges, B. -H. V., et al. (2011). Influence of film thickness on the optical transmission through subwavelength single slits in metallic thin films. Applied Optics, No 2011( 31), G11-G16. doi:10.1364/AO.50.000G11
NLM
Ferri FA, Rivera VAG, Osorio SPA, Silva OB, Zanatta AR, Borges B-HV, Weiner J, Marega Júnior E. Influence of film thickness on the optical transmission through subwavelength single slits in metallic thin films [Internet]. Applied Optics. 2011 ; No 2011( 31): G11-G16.[citado 2024 jul. 01 ] Available from: https://doi.org/10.1364/AO.50.000G11
Vancouver
Ferri FA, Rivera VAG, Osorio SPA, Silva OB, Zanatta AR, Borges B-HV, Weiner J, Marega Júnior E. Influence of film thickness on the optical transmission through subwavelength single slits in metallic thin films [Internet]. Applied Optics. 2011 ; No 2011( 31): G11-G16.[citado 2024 jul. 01 ] Available from: https://doi.org/10.1364/AO.50.000G11
Artigo de periodico
Raman spectroscopy analysis of structural photoinduced changers in Ge'S IND.2'+'Ga IND.2'+'O IND.3' thin films (2010)
Mendes, A. C.; Maia, L. J. Q.; Messaddeq, S. H.; Messaddeq, Y.; Zanatta, Antonio Ricardo; Siu Li, Máximo
Fonte: Current Applied Physics. Unidade: IFSC
Assuntos: ESPECTROSCOPIA RAMAN (ANÁLISE), FILMES FINOS
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ABNT
MENDES, A. C. et al. Raman spectroscopy analysis of structural photoinduced changers in Ge'S IND.2'+'Ga IND.2'+'O IND.3' thin films. Current Applied Physics, v. No 2010, n. 6, p. 1411-1415, 2010Tradução . . Disponível em: https://doi.org/10.1016/j.cap.2010.05.005. Acesso em: 01 jul. 2024.
APA
Mendes, A. C., Maia, L. J. Q., Messaddeq, S. H., Messaddeq, Y., Zanatta, A. R., & Siu Li, M. (2010). Raman spectroscopy analysis of structural photoinduced changers in Ge'S IND.2'+'Ga IND.2'+'O IND.3' thin films. Current Applied Physics, No 2010( 6), 1411-1415. doi:10.1016/j.cap.2010.05.005
NLM
Mendes AC, Maia LJQ, Messaddeq SH, Messaddeq Y, Zanatta AR, Siu Li M. Raman spectroscopy analysis of structural photoinduced changers in Ge'S IND.2'+'Ga IND.2'+'O IND.3' thin films [Internet]. Current Applied Physics. 2010 ; No 2010( 6): 1411-1415.[citado 2024 jul. 01 ] Available from: https://doi.org/10.1016/j.cap.2010.05.005
Vancouver
Mendes AC, Maia LJQ, Messaddeq SH, Messaddeq Y, Zanatta AR, Siu Li M. Raman spectroscopy analysis of structural photoinduced changers in Ge'S IND.2'+'Ga IND.2'+'O IND.3' thin films [Internet]. Current Applied Physics. 2010 ; No 2010( 6): 1411-1415.[citado 2024 jul. 01 ] Available from: https://doi.org/10.1016/j.cap.2010.05.005
Artigo de periodico
Influence of chromium concentration on the optical-electronic properties of ruby microstructures (2010)
Cossolino, L. C.; Zanatta, Antonio Ricardo
Fonte: Journal of Physics D. Unidade: IFSC
Assuntos: FILMES FINOS, CROMO, ÓPTICA (PROPRIEDADES), TRATAMENTO TÉRMICO, RUBI
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
COSSOLINO, L. C. e ZANATTA, Antonio Ricardo. Influence of chromium concentration on the optical-electronic properties of ruby microstructures. Journal of Physics D, v. 43, p. 015302-1-015302-9, 2010Tradução . . Disponível em: https://doi.org/10.1088/0022-3727/43/1/015302. Acesso em: 01 jul. 2024.
APA
Cossolino, L. C., & Zanatta, A. R. (2010). Influence of chromium concentration on the optical-electronic properties of ruby microstructures. Journal of Physics D, 43, 015302-1-015302-9. doi:10.1088/0022-3727/43/1/015302
NLM
Cossolino LC, Zanatta AR. Influence of chromium concentration on the optical-electronic properties of ruby microstructures [Internet]. Journal of Physics D. 2010 ; 43 015302-1-015302-9.[citado 2024 jul. 01 ] Available from: https://doi.org/10.1088/0022-3727/43/1/015302
Vancouver
Cossolino LC, Zanatta AR. Influence of chromium concentration on the optical-electronic properties of ruby microstructures [Internet]. Journal of Physics D. 2010 ; 43 015302-1-015302-9.[citado 2024 jul. 01 ] Available from: https://doi.org/10.1088/0022-3727/43/1/015302
Artigo de periodico
Effect of thermal annealing treatments on the optical properties of rare-earth-doped AIN films (2009)
Zanatta, Antonio Ricardo
Fonte: Journal of Physics D. Unidade: IFSC
Assuntos: FILMES FINOS (PREPARO), FOTOLUMINESCÊNCIA, ALUMÍNIO, ENERGIA, ESPECTROSCOPIA, TEMPERATURA AMBIENTE
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ZANATTA, Antonio Ricardo. Effect of thermal annealing treatments on the optical properties of rare-earth-doped AIN films. Journal of Physics D, v. 42, n. Ja 2009, p. 025109-1-025109-7, 2009Tradução . . Disponível em: https://doi.org/10.1088/0022-3727/42/2/025109. Acesso em: 01 jul. 2024.
APA
Zanatta, A. R. (2009). Effect of thermal annealing treatments on the optical properties of rare-earth-doped AIN films. Journal of Physics D, 42( Ja 2009), 025109-1-025109-7. doi:10.1088/0022-3727/42/2/025109
NLM
Zanatta AR. Effect of thermal annealing treatments on the optical properties of rare-earth-doped AIN films [Internet]. Journal of Physics D. 2009 ; 42( Ja 2009): 025109-1-025109-7.[citado 2024 jul. 01 ] Available from: https://doi.org/10.1088/0022-3727/42/2/025109
Vancouver
Zanatta AR. Effect of thermal annealing treatments on the optical properties of rare-earth-doped AIN films [Internet]. Journal of Physics D. 2009 ; 42( Ja 2009): 025109-1-025109-7.[citado 2024 jul. 01 ] Available from: https://doi.org/10.1088/0022-3727/42/2/025109
Artigo de periodico
Structural, optical and morphological characterization of amorphous 'Ge IND.100-x''Mn IND.x' films deposited by sputtering (2009)
Ferri, F. A.; Zanatta, Antonio Ricardo
Fonte: Journal of Physics D. Unidade: IFSC
Assuntos: FERROMAGNETISMO, SEMICONDUTORES, FILMES FINOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FERRI, F. A. e ZANATTA, Antonio Ricardo. Structural, optical and morphological characterization of amorphous 'Ge IND.100-x''Mn IND.x' films deposited by sputtering. Journal of Physics D, v. 42, n. 3, p. 035005-1-035005-6, 2009Tradução . . Acesso em: 01 jul. 2024.
APA
Ferri, F. A., & Zanatta, A. R. (2009). Structural, optical and morphological characterization of amorphous 'Ge IND.100-x''Mn IND.x' films deposited by sputtering. Journal of Physics D, 42( 3), 035005-1-035005-6.
NLM
Ferri FA, Zanatta AR. Structural, optical and morphological characterization of amorphous 'Ge IND.100-x''Mn IND.x' films deposited by sputtering. Journal of Physics D. 2009 ; 42( 3): 035005-1-035005-6.[citado 2024 jul. 01 ]
Vancouver
Ferri FA, Zanatta AR. Structural, optical and morphological characterization of amorphous 'Ge IND.100-x''Mn IND.x' films deposited by sputtering. Journal of Physics D. 2009 ; 42( 3): 035005-1-035005-6.[citado 2024 jul. 01 ]
Artigo de periodico
Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples (2008)
Ferri, Fabio Aparecido; Zanatta, Antonio Ricardo
Fonte: Journal of Applied Physics. Unidade: IFSC
Assuntos: NÍQUEL, CRISTALIZAÇÃO, ESPECTROSCOPIA RAMAN, FILMES FINOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FERRI, Fabio Aparecido e ZANATTA, Antonio Ricardo. Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples. Journal of Applied Physics, v. 104, n. 1, p. 013534-1-013534-5, 2008Tradução . . Disponível em: https://doi.org/10.1063/1.2955457. Acesso em: 01 jul. 2024.
APA
Ferri, F. A., & Zanatta, A. R. (2008). Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples. Journal of Applied Physics, 104( 1), 013534-1-013534-5. doi:10.1063/1.2955457
NLM
Ferri FA, Zanatta AR. Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples [Internet]. Journal of Applied Physics. 2008 ; 104( 1): 013534-1-013534-5.[citado 2024 jul. 01 ] Available from: https://doi.org/10.1063/1.2955457
Vancouver
Ferri FA, Zanatta AR. Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples [Internet]. Journal of Applied Physics. 2008 ; 104( 1): 013534-1-013534-5.[citado 2024 jul. 01 ] Available from: https://doi.org/10.1063/1.2955457
Artigo de periodico
Electrophoretic deposition of 'Ba IND.0.77''Ca IND.0.23'Ti'O IND.3' nanopowders (2008)
Antonelli, Eduardo; Silva, Ronaldo Santos; De Vicente, Fábio Simões; Zanatta, Antonio Ricardo; Hernandes, Antônio Carlos
Fonte: Journal of Materials Processing Technology. Unidade: IFSC
Assuntos: FILMES FINOS, FERROMAGNETISMO, DIELÉTRICOS (PROPRIEDADES), BÁRIO, TITÂNIO, CÁLCIO, NANOTECNOLOGIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ANTONELLI, Eduardo et al. Electrophoretic deposition of 'Ba IND.0.77''Ca IND.0.23'Ti'O IND.3' nanopowders. Journal of Materials Processing Technology, v. 203, n. 1-3, p. 526-531, 2008Tradução . . Acesso em: 01 jul. 2024.
APA
Antonelli, E., Silva, R. S., De Vicente, F. S., Zanatta, A. R., & Hernandes, A. C. (2008). Electrophoretic deposition of 'Ba IND.0.77''Ca IND.0.23'Ti'O IND.3' nanopowders. Journal of Materials Processing Technology, 203( 1-3), 526-531.
NLM
Antonelli E, Silva RS, De Vicente FS, Zanatta AR, Hernandes AC. Electrophoretic deposition of 'Ba IND.0.77''Ca IND.0.23'Ti'O IND.3' nanopowders. Journal of Materials Processing Technology. 2008 ; 203( 1-3): 526-531.[citado 2024 jul. 01 ]
Vancouver
Antonelli E, Silva RS, De Vicente FS, Zanatta AR, Hernandes AC. Electrophoretic deposition of 'Ba IND.0.77''Ca IND.0.23'Ti'O IND.3' nanopowders. Journal of Materials Processing Technology. 2008 ; 203( 1-3): 526-531.[citado 2024 jul. 01 ]

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