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Artigo de periodico
Magnetic field effect on diffusion of photogenerated holes in a mesoscopic GaAs channel (2024)
Pusep, Yuri A. ; Teodoro, Marcio Daldin ; Patricio, Marco Antonio Tito ; Jacobsen, Gabriel Marques ; Gusev, Gennady ; Bakarov, Askhat
Source: Physical Review B. Unidades: IFSC, IF
Subjects: POÇOS QUÂNTICOS, SEMICONDUTORES, CAMPO MAGNÉTICO, FÍSICA MODERNA
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ABNT
PUSEP, Yuri A. et al. Magnetic field effect on diffusion of photogenerated holes in a mesoscopic GaAs channel. Physical Review B, v. 109, n. 7, p. 075429-1-075429-6, 2024Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.109.075429. Acesso em: 13 jul. 2024.
APA
Pusep, Y. A., Teodoro, M. D., Patricio, M. A. T., Jacobsen, G. M., Gusev, G., & Bakarov, A. (2024). Magnetic field effect on diffusion of photogenerated holes in a mesoscopic GaAs channel. Physical Review B, 109( 7), 075429-1-075429-6. doi:10.1103/PhysRevB.109.075429
NLM
Pusep YA, Teodoro MD, Patricio MAT, Jacobsen GM, Gusev G, Bakarov A. Magnetic field effect on diffusion of photogenerated holes in a mesoscopic GaAs channel [Internet]. Physical Review B. 2024 ; 109( 7): 075429-1-075429-6.[citado 2024 jul. 13 ] Available from: https://doi.org/10.1103/PhysRevB.109.075429
Vancouver
Pusep YA, Teodoro MD, Patricio MAT, Jacobsen GM, Gusev G, Bakarov A. Magnetic field effect on diffusion of photogenerated holes in a mesoscopic GaAs channel [Internet]. Physical Review B. 2024 ; 109( 7): 075429-1-075429-6.[citado 2024 jul. 13 ] Available from: https://doi.org/10.1103/PhysRevB.109.075429
Artigo de periodico
Magnetic field effects on the valence band of AlGaAs and InGaAsP parabolic quantum wells (2023)
Patricio, Marco Antonio Tito ; Villegas-Lelovsky, Leonardo ; Oliveira, Edson Rafael Cardozo de ; Marques, ‪Gilmar Eugenio; LaPierre, Ray ; Toropov, Alexander I.; Pusep, Yuri A.
Source: Physical Review B. Unidade: IFSC
Subjects: SPIN, POÇOS QUÂNTICOS, CAMPO ELETROMAGNÉTICO
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ABNT
PATRICIO, Marco Antonio Tito et al. Magnetic field effects on the valence band of AlGaAs and InGaAsP parabolic quantum wells. Physical Review B, v. 108, n. 3, p. 035416-1-035416-9, 2023Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.108.035416. Acesso em: 13 jul. 2024.
APA
Patricio, M. A. T., Villegas-Lelovsky, L., Oliveira, E. R. C. de, Marques, ‪G. E., LaPierre, R., Toropov, A. I., & Pusep, Y. A. (2023). Magnetic field effects on the valence band of AlGaAs and InGaAsP parabolic quantum wells. Physical Review B, 108( 3), 035416-1-035416-9. doi:10.1103/PhysRevB.108.035416
NLM
Patricio MAT, Villegas-Lelovsky L, Oliveira ERC de, Marques ‪GE, LaPierre R, Toropov AI, Pusep YA. Magnetic field effects on the valence band of AlGaAs and InGaAsP parabolic quantum wells [Internet]. Physical Review B. 2023 ; 108( 3): 035416-1-035416-9.[citado 2024 jul. 13 ] Available from: https://doi.org/10.1103/PhysRevB.108.035416
Vancouver
Patricio MAT, Villegas-Lelovsky L, Oliveira ERC de, Marques ‪GE, LaPierre R, Toropov AI, Pusep YA. Magnetic field effects on the valence band of AlGaAs and InGaAsP parabolic quantum wells [Internet]. Physical Review B. 2023 ; 108( 3): 035416-1-035416-9.[citado 2024 jul. 13 ] Available from: https://doi.org/10.1103/PhysRevB.108.035416
Artigo de periodico
Dynamics of recombination in viscous electron-hole plasma in a mesoscopic GaAs channel (2023)
Pusep, Yuri A. ; Teodoro, Marcio Daldin ; Patricio, Marco Antonio Tito ; Jacobsen, Gabriel Marques ; Gusev, Gennady ; Levine, Alexandre ; Bakarov, Askhat
Source: Journal of Physics D. Unidades: IFSC, IF
Subjects: FOTOLUMINESCÊNCIA, FÍSICA MODERNA, HIDRODINÂMICA, POÇOS QUÂNTICOS
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ABNT
PUSEP, Yuri A. et al. Dynamics of recombination in viscous electron-hole plasma in a mesoscopic GaAs channel. Journal of Physics D, v. 56, n. 17, p. 175301-1-175301-8, 2023Tradução . . Disponível em: https://doi.org/10.1088/1361-6463/acba2a. Acesso em: 13 jul. 2024.
APA
Pusep, Y. A., Teodoro, M. D., Patricio, M. A. T., Jacobsen, G. M., Gusev, G., Levine, A., & Bakarov, A. (2023). Dynamics of recombination in viscous electron-hole plasma in a mesoscopic GaAs channel. Journal of Physics D, 56( 17), 175301-1-175301-8. doi:10.1088/1361-6463/acba2a
NLM
Pusep YA, Teodoro MD, Patricio MAT, Jacobsen GM, Gusev G, Levine A, Bakarov A. Dynamics of recombination in viscous electron-hole plasma in a mesoscopic GaAs channel [Internet]. Journal of Physics D. 2023 ; 56( 17): 175301-1-175301-8.[citado 2024 jul. 13 ] Available from: https://doi.org/10.1088/1361-6463/acba2a
Vancouver
Pusep YA, Teodoro MD, Patricio MAT, Jacobsen GM, Gusev G, Levine A, Bakarov A. Dynamics of recombination in viscous electron-hole plasma in a mesoscopic GaAs channel [Internet]. Journal of Physics D. 2023 ; 56( 17): 175301-1-175301-8.[citado 2024 jul. 13 ] Available from: https://doi.org/10.1088/1361-6463/acba2a
Artigo de periodico
Effect of magnetic field on recombination dynamics in random electron systems (2023)
Patricio, Marco Antonio Tito ; Pusep, Yuri A.
Source: Physica Scripta. Unidade: IFSC
Subjects: CAMPO MAGNÉTICO, POÇOS QUÂNTICOS, FOTOLUMINESCÊNCIA
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ABNT
PATRICIO, Marco Antonio Tito e PUSEP, Yuri A. Effect of magnetic field on recombination dynamics in random electron systems. Physica Scripta, v. 98, n. 9, p. 095938-1-095938-8, 2023Tradução . . Disponível em: https://doi.org/10.1088/1402-4896/aceec4. Acesso em: 13 jul. 2024.
APA
Patricio, M. A. T., & Pusep, Y. A. (2023). Effect of magnetic field on recombination dynamics in random electron systems. Physica Scripta, 98( 9), 095938-1-095938-8. doi:10.1088/1402-4896/aceec4
NLM
Patricio MAT, Pusep YA. Effect of magnetic field on recombination dynamics in random electron systems [Internet]. Physica Scripta. 2023 ; 98( 9): 095938-1-095938-8.[citado 2024 jul. 13 ] Available from: https://doi.org/10.1088/1402-4896/aceec4
Vancouver
Patricio MAT, Pusep YA. Effect of magnetic field on recombination dynamics in random electron systems [Internet]. Physica Scripta. 2023 ; 98( 9): 095938-1-095938-8.[citado 2024 jul. 13 ] Available from: https://doi.org/10.1088/1402-4896/aceec4
Artigo de periodico
Diffusion of photoexcited holes in a viscous electron fluid (2022)
Pusep, Yuri A. ; Teodoro, M. D. ; Laurindo Junior, V. ; Oliveira, E. R. Cardozo ; Gusev, Gennady ; Bakarov, A. K.
Source: Physical Review Letters. Unidades: IFSC, IF
Subjects: POÇOS QUÂNTICOS, MATERIAIS NANOESTRUTURADOS, FOTOLUMINESCÊNCIA
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ABNT
PUSEP, Yuri A. et al. Diffusion of photoexcited holes in a viscous electron fluid. Physical Review Letters, v. 128, n. 13, p. 136801-1-136801-6, 2022Tradução . . Disponível em: https://doi.org/10.1103/PhysRevLett.128.136801. Acesso em: 13 jul. 2024.
APA
Pusep, Y. A., Teodoro, M. D., Laurindo Junior, V., Oliveira, E. R. C., Gusev, G., & Bakarov, A. K. (2022). Diffusion of photoexcited holes in a viscous electron fluid. Physical Review Letters, 128( 13), 136801-1-136801-6. doi:10.1103/PhysRevLett.128.136801
NLM
Pusep YA, Teodoro MD, Laurindo Junior V, Oliveira ERC, Gusev G, Bakarov AK. Diffusion of photoexcited holes in a viscous electron fluid [Internet]. Physical Review Letters. 2022 ; 128( 13): 136801-1-136801-6.[citado 2024 jul. 13 ] Available from: https://doi.org/10.1103/PhysRevLett.128.136801
Vancouver
Pusep YA, Teodoro MD, Laurindo Junior V, Oliveira ERC, Gusev G, Bakarov AK. Diffusion of photoexcited holes in a viscous electron fluid [Internet]. Physical Review Letters. 2022 ; 128( 13): 136801-1-136801-6.[citado 2024 jul. 13 ] Available from: https://doi.org/10.1103/PhysRevLett.128.136801
Artigo de periodico
Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well (2019)
Patricio, M. A. Tito; LaPierre, R. R.; Pusep, Yuri A.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, SEMICONDUTORES
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ABNT
PATRICIO, M. A. Tito e LAPIERRE, R. R. e PUSEP, Yuri A. Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well. Journal of Applied Physics, v. 125, n. 15, p. 155703-01-155703-06, 2019Tradução . . Disponível em: https://doi.org/10.1063/1.5085493. Acesso em: 13 jul. 2024.
APA
Patricio, M. A. T., LaPierre, R. R., & Pusep, Y. A. (2019). Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well. Journal of Applied Physics, 125( 15), 155703-01-155703-06. doi:10.1063/1.5085493
NLM
Patricio MAT, LaPierre RR, Pusep YA. Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well [Internet]. Journal of Applied Physics. 2019 ; 125( 15): 155703-01-155703-06.[citado 2024 jul. 13 ] Available from: https://doi.org/10.1063/1.5085493
Vancouver
Patricio MAT, LaPierre RR, Pusep YA. Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well [Internet]. Journal of Applied Physics. 2019 ; 125( 15): 155703-01-155703-06.[citado 2024 jul. 13 ] Available from: https://doi.org/10.1063/1.5085493
Artigo de periodico
Localized-to-extended-states transition below the Fermi level (2018)
Tito, M. A.; Pusep, Yuri A.
Source: Physical Review B. Unidade: IFSC
Subjects: POÇOS QUÂNTICOS, FOTOLUMINESCÊNCIA
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ABNT
TITO, M. A. e PUSEP, Yuri A. Localized-to-extended-states transition below the Fermi level. Physical Review B, v. 97, n. 18, p. 184203-1-184203-6, 2018Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.97.184203. Acesso em: 13 jul. 2024.
APA
Tito, M. A., & Pusep, Y. A. (2018). Localized-to-extended-states transition below the Fermi level. Physical Review B, 97( 18), 184203-1-184203-6. doi:10.1103/PhysRevB.97.184203
NLM
Tito MA, Pusep YA. Localized-to-extended-states transition below the Fermi level [Internet]. Physical Review B. 2018 ; 97( 18): 184203-1-184203-6.[citado 2024 jul. 13 ] Available from: https://doi.org/10.1103/PhysRevB.97.184203
Vancouver
Tito MA, Pusep YA. Localized-to-extended-states transition below the Fermi level [Internet]. Physical Review B. 2018 ; 97( 18): 184203-1-184203-6.[citado 2024 jul. 13 ] Available from: https://doi.org/10.1103/PhysRevB.97.184203
Artigo de periodico
Dynamics of photogenerated carriers near magnetic field driven quantum phase transition in aperiodic multiple quantum wells (2018)
Tito, M. A.; Pusep, Yuri A.
Source: Journal of Physics D. Unidade: IFSC
Subjects: CAMPO MAGNÉTICO, POÇOS QUÂNTICOS, FOTOLUMINESCÊNCIA
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ABNT
TITO, M. A. e PUSEP, Yuri A. Dynamics of photogenerated carriers near magnetic field driven quantum phase transition in aperiodic multiple quantum wells. Journal of Physics D, v. 51, n. Ja 2018, p. 015304-1-015304-6, 2018Tradução . . Disponível em: https://doi.org/10.1088/1361-6463/aa99cd. Acesso em: 13 jul. 2024.
APA
Tito, M. A., & Pusep, Y. A. (2018). Dynamics of photogenerated carriers near magnetic field driven quantum phase transition in aperiodic multiple quantum wells. Journal of Physics D, 51( Ja 2018), 015304-1-015304-6. doi:10.1088/1361-6463/aa99cd
NLM
Tito MA, Pusep YA. Dynamics of photogenerated carriers near magnetic field driven quantum phase transition in aperiodic multiple quantum wells [Internet]. Journal of Physics D. 2018 ; 51( Ja 2018): 015304-1-015304-6.[citado 2024 jul. 13 ] Available from: https://doi.org/10.1088/1361-6463/aa99cd
Vancouver
Tito MA, Pusep YA. Dynamics of photogenerated carriers near magnetic field driven quantum phase transition in aperiodic multiple quantum wells [Internet]. Journal of Physics D. 2018 ; 51( Ja 2018): 015304-1-015304-6.[citado 2024 jul. 13 ] Available from: https://doi.org/10.1088/1361-6463/aa99cd
Artigo de periodico
Recombination dynamics of Landau levels in an InGaAs/InP quantum well (2018)
Teodoro, M. D.; Tavares, B. G. M.; Castro, E. D. Guarin; LaPierre, R. R.; Pusep, Yuri A.
Source: Physical Review B. Unidade: IFSC
Subjects: POÇOS QUÂNTICOS, FOTOLUMINESCÊNCIA
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ABNT
TEODORO, M. D. et al. Recombination dynamics of Landau levels in an InGaAs/InP quantum well. Physical Review B, v. 98, n. 15, p. 155431-1-155431-7, 2018Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.98.155431. Acesso em: 13 jul. 2024.
APA
Teodoro, M. D., Tavares, B. G. M., Castro, E. D. G., LaPierre, R. R., & Pusep, Y. A. (2018). Recombination dynamics of Landau levels in an InGaAs/InP quantum well. Physical Review B, 98( 15), 155431-1-155431-7. doi:10.1103/PhysRevB.98.155431
NLM
Teodoro MD, Tavares BGM, Castro EDG, LaPierre RR, Pusep YA. Recombination dynamics of Landau levels in an InGaAs/InP quantum well [Internet]. Physical Review B. 2018 ; 98( 15): 155431-1-155431-7.[citado 2024 jul. 13 ] Available from: https://doi.org/10.1103/PhysRevB.98.155431
Vancouver
Teodoro MD, Tavares BGM, Castro EDG, LaPierre RR, Pusep YA. Recombination dynamics of Landau levels in an InGaAs/InP quantum well [Internet]. Physical Review B. 2018 ; 98( 15): 155431-1-155431-7.[citado 2024 jul. 13 ] Available from: https://doi.org/10.1103/PhysRevB.98.155431
Artigo de periodico
Determination of mobility edge in presence of metal-to-insulator transition (2017)
Tito, M. A.; Pusep, Yuri A.
Source: Superlattices and Microstructures. Unidade: IFSC
Subjects: POÇOS QUÂNTICOS, ELÉTRONS, FOTOLUMINESCÊNCIA
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ABNT
TITO, M. A. e PUSEP, Yuri A. Determination of mobility edge in presence of metal-to-insulator transition. Superlattices and Microstructures, v. 104, p. 156-161, 2017Tradução . . Disponível em: https://doi.org/10.1016/j.spmi.2016.12.060. Acesso em: 13 jul. 2024.
APA
Tito, M. A., & Pusep, Y. A. (2017). Determination of mobility edge in presence of metal-to-insulator transition. Superlattices and Microstructures, 104, 156-161. doi:10.1016/j.spmi.2016.12.060
NLM
Tito MA, Pusep YA. Determination of mobility edge in presence of metal-to-insulator transition [Internet]. Superlattices and Microstructures. 2017 ; 104 156-161.[citado 2024 jul. 13 ] Available from: https://doi.org/10.1016/j.spmi.2016.12.060
Vancouver
Tito MA, Pusep YA. Determination of mobility edge in presence of metal-to-insulator transition [Internet]. Superlattices and Microstructures. 2017 ; 104 156-161.[citado 2024 jul. 13 ] Available from: https://doi.org/10.1016/j.spmi.2016.12.060
Artigo de periodico
Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells (2016)
Tito, M. A.; Pusep, Yuri A.; Gold, A.; Teodoro, M. D.; Marques, G. E.; LaPierre, R. R.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, SEMICONDUTORES
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ABNT
TITO, M. A. et al. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells. Journal of Applied Physics, v. 119, n. 9, p. 094301-1-094301-8, 2016Tradução . . Disponível em: https://doi.org/10.1063/1.4942854. Acesso em: 13 jul. 2024.
APA
Tito, M. A., Pusep, Y. A., Gold, A., Teodoro, M. D., Marques, G. E., & LaPierre, R. R. (2016). Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells. Journal of Applied Physics, 119( 9), 094301-1-094301-8. doi:10.1063/1.4942854
NLM
Tito MA, Pusep YA, Gold A, Teodoro MD, Marques GE, LaPierre RR. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells [Internet]. Journal of Applied Physics. 2016 ; 119( 9): 094301-1-094301-8.[citado 2024 jul. 13 ] Available from: https://doi.org/10.1063/1.4942854
Vancouver
Tito MA, Pusep YA, Gold A, Teodoro MD, Marques GE, LaPierre RR. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells [Internet]. Journal of Applied Physics. 2016 ; 119( 9): 094301-1-094301-8.[citado 2024 jul. 13 ] Available from: https://doi.org/10.1063/1.4942854
Artigo de periodico
Shake-up effect in photoluminescence of integer quantum Hall system formed in InGaAs/InP quantum wells (2016)
Pusep, Yuri A.; Tito, M. A.; LaPierre, R. R.
Source: Journal of Physics: Condensed Matter. Unidade: IFSC
Subjects: POÇOS QUÂNTICOS, CAMPO MAGNÉTICO, FOTOLUMINESCÊNCIA
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ABNT
PUSEP, Yuri A. e TITO, M. A. e LAPIERRE, R. R. Shake-up effect in photoluminescence of integer quantum Hall system formed in InGaAs/InP quantum wells. Journal of Physics: Condensed Matter, v. 28, n. 17, p. 175602-1-175602-7, 2016Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/28/17/175602. Acesso em: 13 jul. 2024.
APA
Pusep, Y. A., Tito, M. A., & LaPierre, R. R. (2016). Shake-up effect in photoluminescence of integer quantum Hall system formed in InGaAs/InP quantum wells. Journal of Physics: Condensed Matter, 28( 17), 175602-1-175602-7. doi:10.1088/0953-8984/28/17/175602
NLM
Pusep YA, Tito MA, LaPierre RR. Shake-up effect in photoluminescence of integer quantum Hall system formed in InGaAs/InP quantum wells [Internet]. Journal of Physics: Condensed Matter. 2016 ; 28( 17): 175602-1-175602-7.[citado 2024 jul. 13 ] Available from: https://doi.org/10.1088/0953-8984/28/17/175602
Vancouver
Pusep YA, Tito MA, LaPierre RR. Shake-up effect in photoluminescence of integer quantum Hall system formed in InGaAs/InP quantum wells [Internet]. Journal of Physics: Condensed Matter. 2016 ; 28( 17): 175602-1-175602-7.[citado 2024 jul. 13 ] Available from: https://doi.org/10.1088/0953-8984/28/17/175602
Artigo de periodico
Excitonic spin-splitting in quantum wells with a tilted magnetic field (2016)
Santos, L. Fernandes dos; Castelano, L. K.; Padilha, J. X.; Pusep, Yuri A.; Marques, G. E.; Smirnov, D.; Bakarov, A. K.; Toropov, A. I.; Lopez-Richard, V.
Source: Journal of Physics: Condensed Matter. Unidade: IFSC
Subjects: POÇOS QUÂNTICOS, CAMPO MAGNÉTICO, FOTOLUMINESCÊNCIA
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ABNT
SANTOS, L. Fernandes dos et al. Excitonic spin-splitting in quantum wells with a tilted magnetic field. Journal of Physics: Condensed Matter, v. 28, n. 5, p. 055503-1-055503-8, 2016Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/28/5/055503. Acesso em: 13 jul. 2024.
APA
Santos, L. F. dos, Castelano, L. K., Padilha, J. X., Pusep, Y. A., Marques, G. E., Smirnov, D., et al. (2016). Excitonic spin-splitting in quantum wells with a tilted magnetic field. Journal of Physics: Condensed Matter, 28( 5), 055503-1-055503-8. doi:10.1088/0953-8984/28/5/055503
NLM
Santos LF dos, Castelano LK, Padilha JX, Pusep YA, Marques GE, Smirnov D, Bakarov AK, Toropov AI, Lopez-Richard V. Excitonic spin-splitting in quantum wells with a tilted magnetic field [Internet]. Journal of Physics: Condensed Matter. 2016 ; 28( 5): 055503-1-055503-8.[citado 2024 jul. 13 ] Available from: https://doi.org/10.1088/0953-8984/28/5/055503
Vancouver
Santos LF dos, Castelano LK, Padilha JX, Pusep YA, Marques GE, Smirnov D, Bakarov AK, Toropov AI, Lopez-Richard V. Excitonic spin-splitting in quantum wells with a tilted magnetic field [Internet]. Journal of Physics: Condensed Matter. 2016 ; 28( 5): 055503-1-055503-8.[citado 2024 jul. 13 ] Available from: https://doi.org/10.1088/0953-8984/28/5/055503
Artigo de periodico
Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers (2016)
Tavares, B. G. M.; Tito, M. A.; Pusep, Yuri A.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TAVARES, B. G. M. e TITO, M. A. e PUSEP, Yuri A. Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers. Journal of Applied Physics, v. 119, n. 23, p. 234305-1-234305-4, 2016Tradução . . Disponível em: https://doi.org/10.1063/1.4954161. Acesso em: 13 jul. 2024.
APA
Tavares, B. G. M., Tito, M. A., & Pusep, Y. A. (2016). Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers. Journal of Applied Physics, 119( 23), 234305-1-234305-4. doi:10.1063/1.4954161
NLM
Tavares BGM, Tito MA, Pusep YA. Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers [Internet]. Journal of Applied Physics. 2016 ; 119( 23): 234305-1-234305-4.[citado 2024 jul. 13 ] Available from: https://doi.org/10.1063/1.4954161
Vancouver
Tavares BGM, Tito MA, Pusep YA. Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers [Internet]. Journal of Applied Physics. 2016 ; 119( 23): 234305-1-234305-4.[citado 2024 jul. 13 ] Available from: https://doi.org/10.1063/1.4954161
Artigo de periodico
Magnetic field driven interminiband charge transfer in InGaAs/InP superlattices (2015)
Pusep, Yuri A.; Tavares, B. G. M.; Tito, M. A.; Santos, L. Fernandes dos; LaPierre, R. R.
Source: Journal of Physics: Condensed Matter. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, CAMPO MAGNÉTICO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PUSEP, Yuri A. et al. Magnetic field driven interminiband charge transfer in InGaAs/InP superlattices. Journal of Physics: Condensed Matter, v. 27, n. 24, p. 245601-1-245601-6, 2015Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/27/24/245601. Acesso em: 13 jul. 2024.
APA
Pusep, Y. A., Tavares, B. G. M., Tito, M. A., Santos, L. F. dos, & LaPierre, R. R. (2015). Magnetic field driven interminiband charge transfer in InGaAs/InP superlattices. Journal of Physics: Condensed Matter, 27( 24), 245601-1-245601-6. doi:10.1088/0953-8984/27/24/245601
NLM
Pusep YA, Tavares BGM, Tito MA, Santos LF dos, LaPierre RR. Magnetic field driven interminiband charge transfer in InGaAs/InP superlattices [Internet]. Journal of Physics: Condensed Matter. 2015 ; 27( 24): 245601-1-245601-6.[citado 2024 jul. 13 ] Available from: https://doi.org/10.1088/0953-8984/27/24/245601
Vancouver
Pusep YA, Tavares BGM, Tito MA, Santos LF dos, LaPierre RR. Magnetic field driven interminiband charge transfer in InGaAs/InP superlattices [Internet]. Journal of Physics: Condensed Matter. 2015 ; 27( 24): 245601-1-245601-6.[citado 2024 jul. 13 ] Available from: https://doi.org/10.1088/0953-8984/27/24/245601
Artigo de periodico
Self-assembly of SiO2 nanoparticles for the potentiometric detection of neurotransmitter acetylcholine and its inhibitor (2014)
Arruda, Izabela G.; Guimarães, Francisco Eduardo Gontijo; Ramos, Romildo J.; Vieira, Nirton C. S.
Source: Journal of Nanoscience and Nanotechnology. Unidade: IFSC
Subjects: NANOPARTÍCULAS, NEUROTRANSMISSORES, ACETILCOLINA
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ABNT
ARRUDA, Izabela G. et al. Self-assembly of SiO2 nanoparticles for the potentiometric detection of neurotransmitter acetylcholine and its inhibitor. Journal of Nanoscience and Nanotechnology, v. 14, n. 9, p. 6658-6661, 2014Tradução . . Disponível em: https://doi.org/10.1166/jnn.2014.9351. Acesso em: 13 jul. 2024.
APA
Arruda, I. G., Guimarães, F. E. G., Ramos, R. J., & Vieira, N. C. S. (2014). Self-assembly of SiO2 nanoparticles for the potentiometric detection of neurotransmitter acetylcholine and its inhibitor. Journal of Nanoscience and Nanotechnology, 14( 9), 6658-6661. doi:10.1166/jnn.2014.9351
NLM
Arruda IG, Guimarães FEG, Ramos RJ, Vieira NCS. Self-assembly of SiO2 nanoparticles for the potentiometric detection of neurotransmitter acetylcholine and its inhibitor [Internet]. Journal of Nanoscience and Nanotechnology. 2014 ; 14( 9): 6658-6661.[citado 2024 jul. 13 ] Available from: https://doi.org/10.1166/jnn.2014.9351
Vancouver
Arruda IG, Guimarães FEG, Ramos RJ, Vieira NCS. Self-assembly of SiO2 nanoparticles for the potentiometric detection of neurotransmitter acetylcholine and its inhibitor [Internet]. Journal of Nanoscience and Nanotechnology. 2014 ; 14( 9): 6658-6661.[citado 2024 jul. 13 ] Available from: https://doi.org/10.1166/jnn.2014.9351
Artigo de periodico
Spectroscopic evidence of quantum Hall interlayer tunneling gap collapse caused by tilted magnetic field in a GaAs/AlGaAs triple quantum well (2014)
Santos, L. Fernandes dos; Barbosa, B. G.; Gusev, Guennadii Michailovich ; Ludwig, J.; Smirnov, D.; Bakarov, A. K.; Pusep, Yuri A.
Source: Physical Review B. Unidades: IF, IFSC
Subjects: POÇOS QUÂNTICOS, CAMPO MAGNÉTICO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SANTOS, L. Fernandes dos et al. Spectroscopic evidence of quantum Hall interlayer tunneling gap collapse caused by tilted magnetic field in a GaAs/AlGaAs triple quantum well. Physical Review B, v. 89, n. 19, p. 195113-1-195113-5, 2014Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.89.195113. Acesso em: 13 jul. 2024.
APA
Santos, L. F. dos, Barbosa, B. G., Gusev, G. M., Ludwig, J., Smirnov, D., Bakarov, A. K., & Pusep, Y. A. (2014). Spectroscopic evidence of quantum Hall interlayer tunneling gap collapse caused by tilted magnetic field in a GaAs/AlGaAs triple quantum well. Physical Review B, 89( 19), 195113-1-195113-5. doi:10.1103/PhysRevB.89.195113
NLM
Santos LF dos, Barbosa BG, Gusev GM, Ludwig J, Smirnov D, Bakarov AK, Pusep YA. Spectroscopic evidence of quantum Hall interlayer tunneling gap collapse caused by tilted magnetic field in a GaAs/AlGaAs triple quantum well [Internet]. Physical Review B. 2014 ; 89( 19): 195113-1-195113-5.[citado 2024 jul. 13 ] Available from: https://doi.org/10.1103/PhysRevB.89.195113
Vancouver
Santos LF dos, Barbosa BG, Gusev GM, Ludwig J, Smirnov D, Bakarov AK, Pusep YA. Spectroscopic evidence of quantum Hall interlayer tunneling gap collapse caused by tilted magnetic field in a GaAs/AlGaAs triple quantum well [Internet]. Physical Review B. 2014 ; 89( 19): 195113-1-195113-5.[citado 2024 jul. 13 ] Available from: https://doi.org/10.1103/PhysRevB.89.195113
Artigo de periodico
Production and characterization of natural rubber-Ca/P blends for biomedical purposes (2014)
Nascimento, R. M.; Faita, F. L.; Agostini, D. L. S.; Job, A. E.; Guimarães, Francisco Eduardo Gontijo; Bechtold, I. H.
Source: Materials Science and Engineering C. Unidade: IFSC
Subjects: LATEX, BORRACHA, BIOMATERIAIS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NASCIMENTO, R. M. et al. Production and characterization of natural rubber-Ca/P blends for biomedical purposes. Materials Science and Engineering C, v. 39, p. 29-34, 2014Tradução . . Disponível em: https://doi.org/10.1016/j.msec.2014.02.019. Acesso em: 13 jul. 2024.
APA
Nascimento, R. M., Faita, F. L., Agostini, D. L. S., Job, A. E., Guimarães, F. E. G., & Bechtold, I. H. (2014). Production and characterization of natural rubber-Ca/P blends for biomedical purposes. Materials Science and Engineering C, 39, 29-34. doi:10.1016/j.msec.2014.02.019
NLM
Nascimento RM, Faita FL, Agostini DLS, Job AE, Guimarães FEG, Bechtold IH. Production and characterization of natural rubber-Ca/P blends for biomedical purposes [Internet]. Materials Science and Engineering C. 2014 ; 39 29-34.[citado 2024 jul. 13 ] Available from: https://doi.org/10.1016/j.msec.2014.02.019
Vancouver
Nascimento RM, Faita FL, Agostini DLS, Job AE, Guimarães FEG, Bechtold IH. Production and characterization of natural rubber-Ca/P blends for biomedical purposes [Internet]. Materials Science and Engineering C. 2014 ; 39 29-34.[citado 2024 jul. 13 ] Available from: https://doi.org/10.1016/j.msec.2014.02.019
Artigo de periodico
Grazing angle photoluminescence of porous alumina as an analytical transducer for gaseous ethanol detection (2014)
Guerreiro, Haroldo A.; Strixino, Francisco Trivinho; Chiquito, Adenilson J.; Guimarães, Francisco Eduardo Gontijo; Pereira, Ernesto C.
Source: Journal of Nanoscience and Nanotechnology. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, SEMICONDUTORES, FILMES FINOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GUERREIRO, Haroldo A. et al. Grazing angle photoluminescence of porous alumina as an analytical transducer for gaseous ethanol detection. Journal of Nanoscience and Nanotechnology, v. 14, n. 9, p. 6653-6657, 2014Tradução . . Disponível em: https://doi.org/10.1166/jnn.2014.9375. Acesso em: 13 jul. 2024.
APA
Guerreiro, H. A., Strixino, F. T., Chiquito, A. J., Guimarães, F. E. G., & Pereira, E. C. (2014). Grazing angle photoluminescence of porous alumina as an analytical transducer for gaseous ethanol detection. Journal of Nanoscience and Nanotechnology, 14( 9), 6653-6657. doi:10.1166/jnn.2014.9375
NLM
Guerreiro HA, Strixino FT, Chiquito AJ, Guimarães FEG, Pereira EC. Grazing angle photoluminescence of porous alumina as an analytical transducer for gaseous ethanol detection [Internet]. Journal of Nanoscience and Nanotechnology. 2014 ; 14( 9): 6653-6657.[citado 2024 jul. 13 ] Available from: https://doi.org/10.1166/jnn.2014.9375
Vancouver
Guerreiro HA, Strixino FT, Chiquito AJ, Guimarães FEG, Pereira EC. Grazing angle photoluminescence of porous alumina as an analytical transducer for gaseous ethanol detection [Internet]. Journal of Nanoscience and Nanotechnology. 2014 ; 14( 9): 6653-6657.[citado 2024 jul. 13 ] Available from: https://doi.org/10.1166/jnn.2014.9375
Artigo de periodico
Indium tin oxide synthesized by a low cost route as SEGFET pH sensor (2013)
Vieira, Nirton Cristi Silva; Fernandes, Edson Giuliani Ramos; Queiroz, Alvaro Antonio Alencar de; Guimarães, Francisco Eduardo Gontijo; Zucolotto, Valtencir
Source: Materials Research. Unidade: IFSC
Subjects: SENSOR, ÍNDIO (ELEMENTO QUÍMICO), FILMES FINOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
VIEIRA, Nirton Cristi Silva et al. Indium tin oxide synthesized by a low cost route as SEGFET pH sensor. Materials Research, v. 16, n. 5, p. 1156-1160, 2013Tradução . . Disponível em: https://doi.org/10.1590/S1516-14392013005000101. Acesso em: 13 jul. 2024.
APA
Vieira, N. C. S., Fernandes, E. G. R., Queiroz, A. A. A. de, Guimarães, F. E. G., & Zucolotto, V. (2013). Indium tin oxide synthesized by a low cost route as SEGFET pH sensor. Materials Research, 16( 5), 1156-1160. doi:10.1590/S1516-14392013005000101
NLM
Vieira NCS, Fernandes EGR, Queiroz AAA de, Guimarães FEG, Zucolotto V. Indium tin oxide synthesized by a low cost route as SEGFET pH sensor [Internet]. Materials Research. 2013 ; 16( 5): 1156-1160.[citado 2024 jul. 13 ] Available from: https://doi.org/10.1590/S1516-14392013005000101
Vancouver
Vieira NCS, Fernandes EGR, Queiroz AAA de, Guimarães FEG, Zucolotto V. Indium tin oxide synthesized by a low cost route as SEGFET pH sensor [Internet]. Materials Research. 2013 ; 16( 5): 1156-1160.[citado 2024 jul. 13 ] Available from: https://doi.org/10.1590/S1516-14392013005000101

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