ReP USP - Resultado da busca

Artigo de periodico
An alternative experimental approach to produce rare-earth-doped SiOx films (2016)
Zanatta, Antonio Ricardo
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: MATERIAIS NANOESTRUTURADOS, MATÉRIA CONDENSADA
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ABNT
ZANATTA, Antonio Ricardo. An alternative experimental approach to produce rare-earth-doped SiOx films. Journal of Applied Physics, v. 119, n. 14, p. 145302-1-145302-5, 2016Tradução . . Disponível em: https://doi.org/10.1063/1.4945677. Acesso em: 04 jun. 2024.
APA
Zanatta, A. R. (2016). An alternative experimental approach to produce rare-earth-doped SiOx films. Journal of Applied Physics, 119( 14), 145302-1-145302-5. doi:10.1063/1.4945677
NLM
Zanatta AR. An alternative experimental approach to produce rare-earth-doped SiOx films [Internet]. Journal of Applied Physics. 2016 ; 119( 14): 145302-1-145302-5.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1063/1.4945677
Vancouver
Zanatta AR. An alternative experimental approach to produce rare-earth-doped SiOx films [Internet]. Journal of Applied Physics. 2016 ; 119( 14): 145302-1-145302-5.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1063/1.4945677
Artigo de periodico
Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor (2015)
Scoca, D.; Morales, M.; Merlo, R.; Alvarez, F.; Zanatta, Antonio Ricardo
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, FILMES FINOS
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ABNT
SCOCA, D. et al. Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor. Journal of Applied Physics, v. 117, n. 20, p. 205304-1-205304-6, 2015Tradução . . Disponível em: https://doi.org/10.1063/1.4921809. Acesso em: 04 jun. 2024.
APA
Scoca, D., Morales, M., Merlo, R., Alvarez, F., & Zanatta, A. R. (2015). Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor. Journal of Applied Physics, 117( 20), 205304-1-205304-6. doi:10.1063/1.4921809
NLM
Scoca D, Morales M, Merlo R, Alvarez F, Zanatta AR. Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor [Internet]. Journal of Applied Physics. 2015 ; 117( 20): 205304-1-205304-6.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1063/1.4921809
Vancouver
Scoca D, Morales M, Merlo R, Alvarez F, Zanatta AR. Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor [Internet]. Journal of Applied Physics. 2015 ; 117( 20): 205304-1-205304-6.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1063/1.4921809
Artigo de periodico
On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon (2014)
Zanatta, Antonio Ricardo; Kordesch, M. E.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: SILÍCIO, ALUMÍNIO, FILMES FINOS (COMPOSIÇÃO;ESTRUTURA;PROPRIEDADES)
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ABNT
ZANATTA, Antonio Ricardo e KORDESCH, M. E. On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon. Journal of Applied Physics, v. 116, n. 7, p. 073511-1-073511-7, 2014Tradução . . Disponível em: https://doi.org/10.1063/1.4893654. Acesso em: 04 jun. 2024.
APA
Zanatta, A. R., & Kordesch, M. E. (2014). On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon. Journal of Applied Physics, 116( 7), 073511-1-073511-7. doi:10.1063/1.4893654
NLM
Zanatta AR, Kordesch ME. On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon [Internet]. Journal of Applied Physics. 2014 ; 116( 7): 073511-1-073511-7.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1063/1.4893654
Vancouver
Zanatta AR, Kordesch ME. On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon [Internet]. Journal of Applied Physics. 2014 ; 116( 7): 073511-1-073511-7.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1063/1.4893654
Artigo de periodico
Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases (2014)
Zanatta, Antonio Ricardo; Ingram, D. C.; Kordesch, M. E.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: NÍQUEL, SEMICONDUTORES, DIFRAÇÃO POR RAIOS X, CRISTALIZAÇÃO, FILMES FINOS (COMPOSIÇÃO;ESTRUTURA;PROPRIEDADES)
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ABNT
ZANATTA, Antonio Ricardo e INGRAM, D. C. e KORDESCH, M. E. Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases. Journal of Applied Physics, v. 116, n. 12, p. 123508-1-123508-6, 2014Tradução . . Disponível em: https://doi.org/10.1063/1.4896589. Acesso em: 04 jun. 2024.
APA
Zanatta, A. R., Ingram, D. C., & Kordesch, M. E. (2014). Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases. Journal of Applied Physics, 116( 12), 123508-1-123508-6. doi:10.1063/1.4896589
NLM
Zanatta AR, Ingram DC, Kordesch ME. Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases [Internet]. Journal of Applied Physics. 2014 ; 116( 12): 123508-1-123508-6.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1063/1.4896589
Vancouver
Zanatta AR, Ingram DC, Kordesch ME. Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases [Internet]. Journal of Applied Physics. 2014 ; 116( 12): 123508-1-123508-6.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1063/1.4896589
Artigo de periodico
A simple-versatile approach to achieve all-Si-based optical micro-cavities (2013)
Gallo, I. B.; Zanatta, Antonio Ricardo
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FILMES FINOS, ÓPTICA, SILÍCIO
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ABNT
GALLO, I. B. e ZANATTA, Antonio Ricardo. A simple-versatile approach to achieve all-Si-based optical micro-cavities. Journal of Applied Physics, v. 113, n. 8, p. 083106-1-083106-7, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4793592. Acesso em: 04 jun. 2024.
APA
Gallo, I. B., & Zanatta, A. R. (2013). A simple-versatile approach to achieve all-Si-based optical micro-cavities. Journal of Applied Physics, 113( 8), 083106-1-083106-7. doi:10.1063/1.4793592
NLM
Gallo IB, Zanatta AR. A simple-versatile approach to achieve all-Si-based optical micro-cavities [Internet]. Journal of Applied Physics. 2013 ; 113( 8): 083106-1-083106-7.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1063/1.4793592
Vancouver
Gallo IB, Zanatta AR. A simple-versatile approach to achieve all-Si-based optical micro-cavities [Internet]. Journal of Applied Physics. 2013 ; 113( 8): 083106-1-083106-7.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1063/1.4793592
Trabalho de evento-anais periodico
Enhancement of optical absorption by modulation of the oxygen flow of 'TI''O IND. 2' films deposited by reactive sputtering (2012)
Pereira, André L. J.; Lisboa Filho, Paulo N.; Acuña, Javier; Brandt, Iuri S.; Pasa, André A.; Zanatta, Antonio Ricardo; Vilcarromero, Johnny; Beltrán, Armando; Silva, José H. Dias da
Source: Journal of Applied Physics. Conference titles: International Conference on the Study of Matter at Extreme Conditions - SMEC. Unidade: IFSC
Subjects: OXIGÊNIO (FLUXO), ÓPTICA, FILMES FINOS
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ABNT
PEREIRA, André L. J. et al. Enhancement of optical absorption by modulation of the oxygen flow of 'TI''O IND. 2' films deposited by reactive sputtering. Journal of Applied Physics. College Park: American Institute of Physics - AIP. Disponível em: https://doi.org/10.1063/1.4724334. Acesso em: 04 jun. 2024. , 2012
APA
Pereira, A. L. J., Lisboa Filho, P. N., Acuña, J., Brandt, I. S., Pasa, A. A., Zanatta, A. R., et al. (2012). Enhancement of optical absorption by modulation of the oxygen flow of 'TI''O IND. 2' films deposited by reactive sputtering. Journal of Applied Physics. College Park: American Institute of Physics - AIP. doi:10.1063/1.4724334
NLM
Pereira ALJ, Lisboa Filho PN, Acuña J, Brandt IS, Pasa AA, Zanatta AR, Vilcarromero J, Beltrán A, Silva JHD da. Enhancement of optical absorption by modulation of the oxygen flow of 'TI''O IND. 2' films deposited by reactive sputtering [Internet]. Journal of Applied Physics. 2012 ; 111( 11): 113513-1-113513-11.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1063/1.4724334
Vancouver
Pereira ALJ, Lisboa Filho PN, Acuña J, Brandt IS, Pasa AA, Zanatta AR, Vilcarromero J, Beltrán A, Silva JHD da. Enhancement of optical absorption by modulation of the oxygen flow of 'TI''O IND. 2' films deposited by reactive sputtering [Internet]. Journal of Applied Physics. 2012 ; 111( 11): 113513-1-113513-11.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1063/1.4724334
Artigo de periodico
Visible light emission and energy transfer processes in 'SM'-doped nitride films (2012)
Zanatta, Antonio Ricardo
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: ENERGIA (TRANSFERÊNCIA), ÍONS, ÉRBIO, EMISSÃO DA LUZ
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ABNT
ZANATTA, Antonio Ricardo. Visible light emission and energy transfer processes in 'SM'-doped nitride films. Journal of Applied Physics, v. 111, n. Ju 2012, p. 123105-1-123105-8, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.4729911. Acesso em: 04 jun. 2024.
APA
Zanatta, A. R. (2012). Visible light emission and energy transfer processes in 'SM'-doped nitride films. Journal of Applied Physics, 111( Ju 2012), 123105-1-123105-8. doi:10.1063/1.4729911
NLM
Zanatta AR. Visible light emission and energy transfer processes in 'SM'-doped nitride films [Internet]. Journal of Applied Physics. 2012 ; 111( Ju 2012): 123105-1-123105-8.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1063/1.4729911
Vancouver
Zanatta AR. Visible light emission and energy transfer processes in 'SM'-doped nitride films [Internet]. Journal of Applied Physics. 2012 ; 111( Ju 2012): 123105-1-123105-8.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1063/1.4729911
Artigo de periodico
Effect of ''O IND. 2' POT. +', ''H IND. 2' POT. +' + ''O IND. 2' POT. +', and ''N IND. 2' POT.+' + ''O IND. 2'POT. +' ion-beam irradiation on the field emission properties of carbon nanotubes (2011)
Acuña, J. J. S.; Escobar, M.; Goyanes, S. N.; Candal, R. J.; Zanatta, Antonio Ricardo; Alvarez, F.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FILMES FINOS, NANOTECNOLOGIA, NANOPARTÍCULAS, ESPECTROSCOPIA
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ABNT
ACUÑA, J. J. S. et al. Effect of ''O IND. 2' POT. +', ''H IND. 2' POT. +' + ''O IND. 2' POT. +', and ''N IND. 2' POT.+' + ''O IND. 2'POT. +' ion-beam irradiation on the field emission properties of carbon nanotubes. Journal of Applied Physics, v. 109, n. 11, p. 114317-1-114317-7, 2011Tradução . . Disponível em: https://doi.org/10.1063/1.3593269. Acesso em: 04 jun. 2024.
APA
Acuña, J. J. S., Escobar, M., Goyanes, S. N., Candal, R. J., Zanatta, A. R., & Alvarez, F. (2011). Effect of ''O IND. 2' POT. +', ''H IND. 2' POT. +' + ''O IND. 2' POT. +', and ''N IND. 2' POT.+' + ''O IND. 2'POT. +' ion-beam irradiation on the field emission properties of carbon nanotubes. Journal of Applied Physics, 109( 11), 114317-1-114317-7. doi:10.1063/1.3593269
NLM
Acuña JJS, Escobar M, Goyanes SN, Candal RJ, Zanatta AR, Alvarez F. Effect of ''O IND. 2' POT. +', ''H IND. 2' POT. +' + ''O IND. 2' POT. +', and ''N IND. 2' POT.+' + ''O IND. 2'POT. +' ion-beam irradiation on the field emission properties of carbon nanotubes [Internet]. Journal of Applied Physics. 2011 ; 109( 11): 114317-1-114317-7.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1063/1.3593269
Vancouver
Acuña JJS, Escobar M, Goyanes SN, Candal RJ, Zanatta AR, Alvarez F. Effect of ''O IND. 2' POT. +', ''H IND. 2' POT. +' + ''O IND. 2' POT. +', and ''N IND. 2' POT.+' + ''O IND. 2'POT. +' ion-beam irradiation on the field emission properties of carbon nanotubes [Internet]. Journal of Applied Physics. 2011 ; 109( 11): 114317-1-114317-7.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1063/1.3593269
Artigo de periodico
Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples (2008)
Ferri, Fabio Aparecido; Zanatta, Antonio Ricardo
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: NÍQUEL, CRISTALIZAÇÃO, ESPECTROSCOPIA RAMAN, FILMES FINOS
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ABNT
FERRI, Fabio Aparecido e ZANATTA, Antonio Ricardo. Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples. Journal of Applied Physics, v. 104, n. 1, p. 013534-1-013534-5, 2008Tradução . . Disponível em: https://doi.org/10.1063/1.2955457. Acesso em: 04 jun. 2024.
APA
Ferri, F. A., & Zanatta, A. R. (2008). Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples. Journal of Applied Physics, 104( 1), 013534-1-013534-5. doi:10.1063/1.2955457
NLM
Ferri FA, Zanatta AR. Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples [Internet]. Journal of Applied Physics. 2008 ; 104( 1): 013534-1-013534-5.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1063/1.2955457
Vancouver
Ferri FA, Zanatta AR. Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples [Internet]. Journal of Applied Physics. 2008 ; 104( 1): 013534-1-013534-5.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1063/1.2955457
Artigo de periodico
Crystallization, stress, and stress-relieve due to nickel in amorphous silicon thin films (2007)
Zanatta, Antonio Ricardo; Ferri, Fabio Aparecido
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: CRISTALIZAÇÃO, FILMES FINOS, SILICIO, EXPANSÃO DO CALOR
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ABNT
ZANATTA, Antonio Ricardo e FERRI, Fabio Aparecido. Crystallization, stress, and stress-relieve due to nickel in amorphous silicon thin films. Journal of Applied Physics, v. 102, n. 4, p. 043509-1-043509-5, 2007Tradução . . Disponível em: https://doi.org/10.1063/1.2770823. Acesso em: 04 jun. 2024.
APA
Zanatta, A. R., & Ferri, F. A. (2007). Crystallization, stress, and stress-relieve due to nickel in amorphous silicon thin films. Journal of Applied Physics, 102( 4), 043509-1-043509-5. doi:10.1063/1.2770823
NLM
Zanatta AR, Ferri FA. Crystallization, stress, and stress-relieve due to nickel in amorphous silicon thin films [Internet]. Journal of Applied Physics. 2007 ; 102( 4): 043509-1-043509-5.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1063/1.2770823
Vancouver
Zanatta AR, Ferri FA. Crystallization, stress, and stress-relieve due to nickel in amorphous silicon thin films [Internet]. Journal of Applied Physics. 2007 ; 102( 4): 043509-1-043509-5.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1063/1.2770823
Artigo de periodico
Thermally synthesized ruby microstructures and luminescence centers (2006)
Zanatta, Antonio Ricardo; Ribeiro, Cristina Tereza Monteiro; Jahn, U.; Aldabergenova, S. B.; Strunk, H. P.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FILMES FINOS, LUMINESCÊNCIA
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ABNT
ZANATTA, Antonio Ricardo et al. Thermally synthesized ruby microstructures and luminescence centers. Journal of Applied Physics, v. 100, n. 9, p. 113112-1-113112-7, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2393009. Acesso em: 04 jun. 2024.
APA
Zanatta, A. R., Ribeiro, C. T. M., Jahn, U., Aldabergenova, S. B., & Strunk, H. P. (2006). Thermally synthesized ruby microstructures and luminescence centers. Journal of Applied Physics, 100( 9), 113112-1-113112-7. doi:10.1063/1.2393009
NLM
Zanatta AR, Ribeiro CTM, Jahn U, Aldabergenova SB, Strunk HP. Thermally synthesized ruby microstructures and luminescence centers [Internet]. Journal of Applied Physics. 2006 ; 100( 9): 113112-1-113112-7.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1063/1.2393009
Vancouver
Zanatta AR, Ribeiro CTM, Jahn U, Aldabergenova SB, Strunk HP. Thermally synthesized ruby microstructures and luminescence centers [Internet]. Journal of Applied Physics. 2006 ; 100( 9): 113112-1-113112-7.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1063/1.2393009
Artigo de periodico
Nonresonant third-order nonlinearity of antimony glasses at telecom wavelengths (2006)
Gómez, Luis A.; Araújo, Cid B.; Messias, D. N.; Misoguti, Lino; Zílio, Sérgio Carlos; Nalin, M.; Messaddeq, Y.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: VIDRO, LASER, ÓPTICA
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ABNT
GÓMEZ, Luis A. et al. Nonresonant third-order nonlinearity of antimony glasses at telecom wavelengths. Journal of Applied Physics, v. 100, n. 11, p. 116105-1-116105-3, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2388045. Acesso em: 04 jun. 2024.
APA
Gómez, L. A., Araújo, C. B., Messias, D. N., Misoguti, L., Zílio, S. C., Nalin, M., & Messaddeq, Y. (2006). Nonresonant third-order nonlinearity of antimony glasses at telecom wavelengths. Journal of Applied Physics, 100( 11), 116105-1-116105-3. doi:10.1063/1.2388045
NLM
Gómez LA, Araújo CB, Messias DN, Misoguti L, Zílio SC, Nalin M, Messaddeq Y. Nonresonant third-order nonlinearity of antimony glasses at telecom wavelengths [Internet]. Journal of Applied Physics. 2006 ; 100( 11): 116105-1-116105-3.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1063/1.2388045
Vancouver
Gómez LA, Araújo CB, Messias DN, Misoguti L, Zílio SC, Nalin M, Messaddeq Y. Nonresonant third-order nonlinearity of antimony glasses at telecom wavelengths [Internet]. Journal of Applied Physics. 2006 ; 100( 11): 116105-1-116105-3.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1063/1.2388045
Artigo de periodico
Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films (2006)
Ferri, Fabio Aparecido; Zanatta, Antonio Ricardo; Chambouleyron, I.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: ESPECTROSCOPIA RAMAN, FILMES FINOS, SILÍCIO, NÍQUEL, TEMPERATURA
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ABNT
FERRI, Fabio Aparecido e ZANATTA, Antonio Ricardo e CHAMBOULEYRON, I. Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films. Journal of Applied Physics, v. No 2006, n. 9, p. 094311-1-094311-7, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2362877. Acesso em: 04 jun. 2024.
APA
Ferri, F. A., Zanatta, A. R., & Chambouleyron, I. (2006). Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films. Journal of Applied Physics, No 2006( 9), 094311-1-094311-7. doi:10.1063/1.2362877
NLM
Ferri FA, Zanatta AR, Chambouleyron I. Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films [Internet]. Journal of Applied Physics. 2006 ; No 2006( 9): 094311-1-094311-7.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1063/1.2362877
Vancouver
Ferri FA, Zanatta AR, Chambouleyron I. Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films [Internet]. Journal of Applied Physics. 2006 ; No 2006( 9): 094311-1-094311-7.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1063/1.2362877
Artigo de periodico
Optoelectronic and structural characteristics of Er-doped amorphous AIN films (2005)
Zanatta, Antonio Ricardo; Ribeiro, Cristina Teresa M.; Jahn, U.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: ESPECTROSCOPIA RAMAN, SEMICONDUTORES, FOTOLUMINESCÊNCIA, LUMINESCÊNCIA, SILICONE, FILMES FINOS
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ABNT
ZANATTA, Antonio Ricardo e RIBEIRO, Cristina Teresa M. e JAHN, U. Optoelectronic and structural characteristics of Er-doped amorphous AIN films. Journal of Applied Physics, v. No 2005, n. 9, p. 093514-1-093514-8, 2005Tradução . . Disponível em: https://doi.org/10.1063/1.2127120. Acesso em: 04 jun. 2024.
APA
Zanatta, A. R., Ribeiro, C. T. M., & Jahn, U. (2005). Optoelectronic and structural characteristics of Er-doped amorphous AIN films. Journal of Applied Physics, No 2005( 9), 093514-1-093514-8. doi:10.1063/1.2127120
NLM
Zanatta AR, Ribeiro CTM, Jahn U. Optoelectronic and structural characteristics of Er-doped amorphous AIN films [Internet]. Journal of Applied Physics. 2005 ; No 2005( 9): 093514-1-093514-8.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1063/1.2127120
Vancouver
Zanatta AR, Ribeiro CTM, Jahn U. Optoelectronic and structural characteristics of Er-doped amorphous AIN films [Internet]. Journal of Applied Physics. 2005 ; No 2005( 9): 093514-1-093514-8.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1063/1.2127120
Artigo de periodico
Low-temperature Al-induced crystallization of amorphous Ge (2005)
Zanatta, Antonio Ricardo; Chambouleyron, I.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: ESPECTROSCOPIA, SEMICONDUTORES, FILMES FINOS
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ABNT
ZANATTA, Antonio Ricardo e CHAMBOULEYRON, I. Low-temperature Al-induced crystallization of amorphous Ge. Journal of Applied Physics, v. 97, n. 11, p. 094914-1-094914-11, 2005Tradução . . Disponível em: https://doi.org/10.1063/1.1889227. Acesso em: 04 jun. 2024.
APA
Zanatta, A. R., & Chambouleyron, I. (2005). Low-temperature Al-induced crystallization of amorphous Ge. Journal of Applied Physics, 97( 11), 094914-1-094914-11. doi:10.1063/1.1889227
NLM
Zanatta AR, Chambouleyron I. Low-temperature Al-induced crystallization of amorphous Ge [Internet]. Journal of Applied Physics. 2005 ; 97( 11): 094914-1-094914-11.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1063/1.1889227
Vancouver
Zanatta AR, Chambouleyron I. Low-temperature Al-induced crystallization of amorphous Ge [Internet]. Journal of Applied Physics. 2005 ; 97( 11): 094914-1-094914-11.[citado 2024 jun. 04 ] Available from: https://doi.org/10.1063/1.1889227

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