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Trabalho de evento-anais periodico
Optical properties and carrier effective masses of Rutile 'SnO IND.2' as obtained from full relativistic ab initio calculations (2007)
Lino, A T; Borges, P D; Scolfaro, Luisa Maria Ribeiro; Rodrigues, S C P; Silva Junior, E F da
Source: AIP Conference Proceedings. Conference titles: 28th International Conference on the Physics of Semiconductors - ICPS 2006. Unidades: IF, EP
Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA
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ABNT
LINO, A T et al. Optical properties and carrier effective masses of Rutile 'SnO IND.2' as obtained from full relativistic ab initio calculations. AIP Conference Proceedings. New York: The Institute. Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000259000001&idtype=cvips&prog=normal. Acesso em: 02 jul. 2024. , 2007
APA
Lino, A. T., Borges, P. D., Scolfaro, L. M. R., Rodrigues, S. C. P., & Silva Junior, E. F. da. (2007). Optical properties and carrier effective masses of Rutile 'SnO IND.2' as obtained from full relativistic ab initio calculations. AIP Conference Proceedings. New York: The Institute. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000259000001&idtype=cvips&prog=normal
NLM
Lino AT, Borges PD, Scolfaro LMR, Rodrigues SCP, Silva Junior EF da. Optical properties and carrier effective masses of Rutile 'SnO IND.2' as obtained from full relativistic ab initio calculations [Internet]. AIP Conference Proceedings. 2007 ; 893 529-530.[citado 2024 jul. 02 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000259000001&idtype=cvips&prog=normal
Vancouver
Lino AT, Borges PD, Scolfaro LMR, Rodrigues SCP, Silva Junior EF da. Optical properties and carrier effective masses of Rutile 'SnO IND.2' as obtained from full relativistic ab initio calculations [Internet]. AIP Conference Proceedings. 2007 ; 893 529-530.[citado 2024 jul. 02 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000259000001&idtype=cvips&prog=normal
Artigo de periodico
Structural, electronic, and optical properties of "ZrO IND.2" from ab initio calculations (2006)
Garcia, Joelson Cott; Scolfaro, Luisa Maria Ribeiro; Lino, Antonio Tadeu; Freire, V N; Farias, G A; Silva, C C; Alves, H W Leite; Rodrigues, S C P; Silva, E F da
Source: Journal of Applied Physics. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, DIELÉTRICOS, PROPRIEDADES DOS MATERIAIS
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GARCIA, Joelson Cott et al. Structural, electronic, and optical properties of "ZrO IND.2" from ab initio calculations. Journal of Applied Physics, v. 100, n. 1, p. 104103-1/104103-9, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2386967. Acesso em: 02 jul. 2024.
APA
Garcia, J. C., Scolfaro, L. M. R., Lino, A. T., Freire, V. N., Farias, G. A., Silva, C. C., et al. (2006). Structural, electronic, and optical properties of "ZrO IND.2" from ab initio calculations. Journal of Applied Physics, 100( 1), 104103-1/104103-9. doi:10.1063/1.2386967
NLM
Garcia JC, Scolfaro LMR, Lino AT, Freire VN, Farias GA, Silva CC, Alves HWL, Rodrigues SCP, Silva EF da. Structural, electronic, and optical properties of "ZrO IND.2" from ab initio calculations [Internet]. Journal of Applied Physics. 2006 ; 100( 1): 104103-1/104103-9.[citado 2024 jul. 02 ] Available from: https://doi.org/10.1063/1.2386967
Vancouver
Garcia JC, Scolfaro LMR, Lino AT, Freire VN, Farias GA, Silva CC, Alves HWL, Rodrigues SCP, Silva EF da. Structural, electronic, and optical properties of "ZrO IND.2" from ab initio calculations [Internet]. Journal of Applied Physics. 2006 ; 100( 1): 104103-1/104103-9.[citado 2024 jul. 02 ] Available from: https://doi.org/10.1063/1.2386967
Artigo de periodico
Electronic and magnetic properties of Mn-doped InP nanowires from first principles (2006)
Schmidt, T M; Venezuela, P; Arantes Junior, Jeverson Teodoro; Fazzio, Adalberto
Source: Physical Review B. Unidade: IF
Subjects: MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA, PROPRIEDADES DOS MATERIAIS, SEMICONDUTORES, FERROMAGNETISMO
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SCHMIDT, T M et al. Electronic and magnetic properties of Mn-doped InP nanowires from first principles. Physical Review B, v. 73, n. 23, p. 235330, 2006Tradução . . Disponível em: https://doi.org/10.1103/physrevb.73.235330. Acesso em: 02 jul. 2024.
APA
Schmidt, T. M., Venezuela, P., Arantes Junior, J. T., & Fazzio, A. (2006). Electronic and magnetic properties of Mn-doped InP nanowires from first principles. Physical Review B, 73( 23), 235330. doi:10.1103/physrevb.73.235330
NLM
Schmidt TM, Venezuela P, Arantes Junior JT, Fazzio A. Electronic and magnetic properties of Mn-doped InP nanowires from first principles [Internet]. Physical Review B. 2006 ; 73( 23): 235330.[citado 2024 jul. 02 ] Available from: https://doi.org/10.1103/physrevb.73.235330
Vancouver
Schmidt TM, Venezuela P, Arantes Junior JT, Fazzio A. Electronic and magnetic properties of Mn-doped InP nanowires from first principles [Internet]. Physical Review B. 2006 ; 73( 23): 235330.[citado 2024 jul. 02 ] Available from: https://doi.org/10.1103/physrevb.73.235330
Artigo de periodico
Hydrogen adsorption on carbon-doped boron nitride nanotube (2006)
Baierle, Rogerio Jose; Piquini, P; Schmidt, Tome Mauro; Fazzio, Adalberto
Source: Journal of Physical Chemistry. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, PROPRIEDADES DOS MATERIAIS
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ABNT
BAIERLE, Rogerio Jose et al. Hydrogen adsorption on carbon-doped boron nitride nanotube. Journal of Physical Chemistry, v. 110, n. 42, p. 21184-21188, 2006Tradução . . Disponível em: http://pubs.acs.org/cgi-bin/article.cgi/jpcbfk/2006/110/i42/pdf/jp061587s.pdf. Acesso em: 02 jul. 2024.
APA
Baierle, R. J., Piquini, P., Schmidt, T. M., & Fazzio, A. (2006). Hydrogen adsorption on carbon-doped boron nitride nanotube. Journal of Physical Chemistry, 110( 42), 21184-21188. Recuperado de http://pubs.acs.org/cgi-bin/article.cgi/jpcbfk/2006/110/i42/pdf/jp061587s.pdf
NLM
Baierle RJ, Piquini P, Schmidt TM, Fazzio A. Hydrogen adsorption on carbon-doped boron nitride nanotube [Internet]. Journal of Physical Chemistry. 2006 ; 110( 42): 21184-21188.[citado 2024 jul. 02 ] Available from: http://pubs.acs.org/cgi-bin/article.cgi/jpcbfk/2006/110/i42/pdf/jp061587s.pdf
Vancouver
Baierle RJ, Piquini P, Schmidt TM, Fazzio A. Hydrogen adsorption on carbon-doped boron nitride nanotube [Internet]. Journal of Physical Chemistry. 2006 ; 110( 42): 21184-21188.[citado 2024 jul. 02 ] Available from: http://pubs.acs.org/cgi-bin/article.cgi/jpcbfk/2006/110/i42/pdf/jp061587s.pdf
Artigo de periodico
Formation energy of native defects in BN nanotubes: an ab initio study (2005)
Piquini, P; Baierle, Rogerio Jose; Schmidt, T M; Fazzio, Adalberto
Source: Nanotechnology. Unidade: IF
Subjects: MATERIAIS, ESTRUTURA ELETRÔNICA, NANOTECNOLOGIA
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ABNT
PIQUINI, P et al. Formation energy of native defects in BN nanotubes: an ab initio study. Nanotechnology, v. 16, n. 6, p. 827-831, 2005Tradução . . Disponível em: https://doi.org/10.1088/0957-4484/16/6/035. Acesso em: 02 jul. 2024.
APA
Piquini, P., Baierle, R. J., Schmidt, T. M., & Fazzio, A. (2005). Formation energy of native defects in BN nanotubes: an ab initio study. Nanotechnology, 16( 6), 827-831. doi:10.1088/0957-4484/16/6/035
NLM
Piquini P, Baierle RJ, Schmidt TM, Fazzio A. Formation energy of native defects in BN nanotubes: an ab initio study [Internet]. Nanotechnology. 2005 ; 16( 6): 827-831.[citado 2024 jul. 02 ] Available from: https://doi.org/10.1088/0957-4484/16/6/035
Vancouver
Piquini P, Baierle RJ, Schmidt TM, Fazzio A. Formation energy of native defects in BN nanotubes: an ab initio study [Internet]. Nanotechnology. 2005 ; 16( 6): 827-831.[citado 2024 jul. 02 ] Available from: https://doi.org/10.1088/0957-4484/16/6/035
Artigo de periodico
Stability and electronic confinement of free-standing InP nanowires: Ab initio calculations (2005)
Schmidt, T M; Miwa, R H; Venezuela, P; Fazzio, Adalberto
Source: Physical Review B. Unidade: IF
Subjects: MATÉRIA CONDENSADA, FOTOLUMINESCÊNCIA, ESTRUTURA ELETRÔNICA
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ABNT
SCHMIDT, T M et al. Stability and electronic confinement of free-standing InP nanowires: Ab initio calculations. Physical Review B, v. 72, n. 19, p. 193404/1-193404/4, 2005Tradução . . Acesso em: 02 jul. 2024.
APA
Schmidt, T. M., Miwa, R. H., Venezuela, P., & Fazzio, A. (2005). Stability and electronic confinement of free-standing InP nanowires: Ab initio calculations. Physical Review B, 72( 19), 193404/1-193404/4.
NLM
Schmidt TM, Miwa RH, Venezuela P, Fazzio A. Stability and electronic confinement of free-standing InP nanowires: Ab initio calculations. Physical Review B. 2005 ; 72( 19): 193404/1-193404/4.[citado 2024 jul. 02 ]
Vancouver
Schmidt TM, Miwa RH, Venezuela P, Fazzio A. Stability and electronic confinement of free-standing InP nanowires: Ab initio calculations. Physical Review B. 2005 ; 72( 19): 193404/1-193404/4.[citado 2024 jul. 02 ]
Artigo de periodico
Substrate-dependent electronic properties of an armchair carbon nanotube adsorbed on H/Si(001) (2005)
Miwa, R H; Orellana, W; Fazzio, Adalberto
Source: Applied Physics Letters. Unidade: IF
Subjects: MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA, SUPERFÍCIE FÍSICA
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ABNT
MIWA, R H e ORELLANA, W e FAZZIO, Adalberto. Substrate-dependent electronic properties of an armchair carbon nanotube adsorbed on H/Si(001). Applied Physics Letters, v. 86, p. 213111, 2005Tradução . . Disponível em: https://doi.org/10.1063/1.1931027. Acesso em: 02 jul. 2024.
APA
Miwa, R. H., Orellana, W., & Fazzio, A. (2005). Substrate-dependent electronic properties of an armchair carbon nanotube adsorbed on H/Si(001). Applied Physics Letters, 86, 213111. doi:10.1063/1.1931027
NLM
Miwa RH, Orellana W, Fazzio A. Substrate-dependent electronic properties of an armchair carbon nanotube adsorbed on H/Si(001) [Internet]. Applied Physics Letters. 2005 ; 86 213111.[citado 2024 jul. 02 ] Available from: https://doi.org/10.1063/1.1931027
Vancouver
Miwa RH, Orellana W, Fazzio A. Substrate-dependent electronic properties of an armchair carbon nanotube adsorbed on H/Si(001) [Internet]. Applied Physics Letters. 2005 ; 86 213111.[citado 2024 jul. 02 ] Available from: https://doi.org/10.1063/1.1931027
Artigo de periodico
Stability and electronic properties of carbon nanotubes adsorbed on Si(001) (2004)
Orellana, W; Miwa, R H; Fazzio, Adalberto
Source: Surface Science. Unidade: IF
Subjects: MATÉRIA CONDENSADA, SUPERFÍCIE FÍSICA, ESTRUTURA ELETRÔNICA
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ABNT
ORELLANA, W e MIWA, R H e FAZZIO, Adalberto. Stability and electronic properties of carbon nanotubes adsorbed on Si(001). Surface Science, v. 566-568, p. 728-732, 2004Tradução . . Disponível em: https://doi.org/10.1016/j.susc.2004.06.006. Acesso em: 02 jul. 2024.
APA
Orellana, W., Miwa, R. H., & Fazzio, A. (2004). Stability and electronic properties of carbon nanotubes adsorbed on Si(001). Surface Science, 566-568, 728-732. doi:10.1016/j.susc.2004.06.006
NLM
Orellana W, Miwa RH, Fazzio A. Stability and electronic properties of carbon nanotubes adsorbed on Si(001) [Internet]. Surface Science. 2004 ; 566-568 728-732.[citado 2024 jul. 02 ] Available from: https://doi.org/10.1016/j.susc.2004.06.006
Vancouver
Orellana W, Miwa RH, Fazzio A. Stability and electronic properties of carbon nanotubes adsorbed on Si(001) [Internet]. Surface Science. 2004 ; 566-568 728-732.[citado 2024 jul. 02 ] Available from: https://doi.org/10.1016/j.susc.2004.06.006
Artigo de periodico
Adsorption of 'Nh IND. 3' on Ge(001) (2003)
Miotto, R; Miwa, R H; Ferraz, A. C.
Source: Phisical Review B. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, SUPERFÍCIE FÍSICA
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ABNT
MIOTTO, R e MIWA, R H e FERRAZ, A. C. Adsorption of 'Nh IND. 3' on Ge(001). Phisical Review B, v. 68, n. 11, p. 115436/1-1155436/6, 2003Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000068000011115436000001&idtype=cvips. Acesso em: 02 jul. 2024.
APA
Miotto, R., Miwa, R. H., & Ferraz, A. C. (2003). Adsorption of 'Nh IND. 3' on Ge(001). Phisical Review B, 68( 11), 115436/1-1155436/6. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000068000011115436000001&idtype=cvips
NLM
Miotto R, Miwa RH, Ferraz AC. Adsorption of 'Nh IND. 3' on Ge(001) [Internet]. Phisical Review B. 2003 ; 68( 11): 115436/1-1155436/6.[citado 2024 jul. 02 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000068000011115436000001&idtype=cvips
Vancouver
Miotto R, Miwa RH, Ferraz AC. Adsorption of 'Nh IND. 3' on Ge(001) [Internet]. Phisical Review B. 2003 ; 68( 11): 115436/1-1155436/6.[citado 2024 jul. 02 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000068000011115436000001&idtype=cvips
Artigo de periodico
Theoretical study of native defects in BN nanotubes (2003)
Schmidt, T M; Baierle, Rogerio Jose; Piquini, P; Fazzio, Adalberto
Source: Physical Review. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, POLÍMEROS (MATERIAIS), ESTRUTURA DOS SÓLIDOS, CRISTALOGRAFIA
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ABNT
SCHMIDT, T M et al. Theoretical study of native defects in BN nanotubes. Physical Review, v. 67, n. 11, p. 113407/1-113407/4, 2003Tradução . . Disponível em: https://doi.org/10.1103/physrevb.67.113407. Acesso em: 02 jul. 2024.
APA
Schmidt, T. M., Baierle, R. J., Piquini, P., & Fazzio, A. (2003). Theoretical study of native defects in BN nanotubes. Physical Review, 67( 11), 113407/1-113407/4. doi:10.1103/physrevb.67.113407
NLM
Schmidt TM, Baierle RJ, Piquini P, Fazzio A. Theoretical study of native defects in BN nanotubes [Internet]. Physical Review. 2003 ; 67( 11): 113407/1-113407/4.[citado 2024 jul. 02 ] Available from: https://doi.org/10.1103/physrevb.67.113407
Vancouver
Schmidt TM, Baierle RJ, Piquini P, Fazzio A. Theoretical study of native defects in BN nanotubes [Internet]. Physical Review. 2003 ; 67( 11): 113407/1-113407/4.[citado 2024 jul. 02 ] Available from: https://doi.org/10.1103/physrevb.67.113407
Artigo de periodico
Theoretical investigation of extended defects and their interactions with vacancies in 'Si IND.X' 'Ge IND.1-X' (2003)
Miwa, R H; Venezuela, P; Fazzio, Adalberto
Source: Physical Review B. Unidade: IF
Assunto: ESTRUTURA ELETRÔNICA
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ABNT
MIWA, R H e VENEZUELA, P e FAZZIO, Adalberto. Theoretical investigation of extended defects and their interactions with vacancies in 'Si IND.X' 'Ge IND.1-X'. Physical Review B, v. 67, n. 20, p. 205317/1-205317, 2003Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000020205317000001&idtype=cvips. Acesso em: 02 jul. 2024.
APA
Miwa, R. H., Venezuela, P., & Fazzio, A. (2003). Theoretical investigation of extended defects and their interactions with vacancies in 'Si IND.X' 'Ge IND.1-X'. Physical Review B, 67( 20), 205317/1-205317. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000020205317000001&idtype=cvips
NLM
Miwa RH, Venezuela P, Fazzio A. Theoretical investigation of extended defects and their interactions with vacancies in 'Si IND.X' 'Ge IND.1-X' [Internet]. Physical Review B. 2003 ; 67( 20): 205317/1-205317.[citado 2024 jul. 02 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000020205317000001&idtype=cvips
Vancouver
Miwa RH, Venezuela P, Fazzio A. Theoretical investigation of extended defects and their interactions with vacancies in 'Si IND.X' 'Ge IND.1-X' [Internet]. Physical Review B. 2003 ; 67( 20): 205317/1-205317.[citado 2024 jul. 02 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000020205317000001&idtype=cvips
Artigo de periodico
Ab initio study of the GaAs(001)-In(4 X 2) surface (2003)
Miwa, Roberto Hiroki; Miotto, R.; Ferraz, A. C.; Srivastava, G P
Source: Physical Review B. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, SUPERFÍCIE FÍSICA
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ABNT
MIWA, Roberto Hiroki et al. Ab initio study of the GaAs(001)-In(4 X 2) surface. Physical Review B, v. 67, n. 4, p. 045325/1-045325/5, 2003Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000004045325000001&idtype=cvips. Acesso em: 02 jul. 2024.
APA
Miwa, R. H., Miotto, R., Ferraz, A. C., & Srivastava, G. P. (2003). Ab initio study of the GaAs(001)-In(4 X 2) surface. Physical Review B, 67( 4), 045325/1-045325/5. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000004045325000001&idtype=cvips
NLM
Miwa RH, Miotto R, Ferraz AC, Srivastava GP. Ab initio study of the GaAs(001)-In(4 X 2) surface [Internet]. Physical Review B. 2003 ; 67( 4): 045325/1-045325/5.[citado 2024 jul. 02 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000004045325000001&idtype=cvips
Vancouver
Miwa RH, Miotto R, Ferraz AC, Srivastava GP. Ab initio study of the GaAs(001)-In(4 X 2) surface [Internet]. Physical Review B. 2003 ; 67( 4): 045325/1-045325/5.[citado 2024 jul. 02 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000004045325000001&idtype=cvips
Artigo de periodico
First-principles calculations of carbon nanotubes adsorbed on Si(001) (2003)
Orellana, W; Miwa, R H; Fazzio, Adalberto
Source: Physical Review Letters. Unidade: IF
Subjects: PROPRIEDADES DOS MATERIAIS, ESTRUTURA ELETRÔNICA, NANOTECNOLOGIA
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ABNT
ORELLANA, W e MIWA, R H e FAZZIO, Adalberto. First-principles calculations of carbon nanotubes adsorbed on Si(001). Physical Review Letters, v. 91, n. 16, p. 166802/1-166802/4, 2003Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000091000016166802000001&idtype=cvips. Acesso em: 02 jul. 2024.
APA
Orellana, W., Miwa, R. H., & Fazzio, A. (2003). First-principles calculations of carbon nanotubes adsorbed on Si(001). Physical Review Letters, 91( 16), 166802/1-166802/4. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000091000016166802000001&idtype=cvips
NLM
Orellana W, Miwa RH, Fazzio A. First-principles calculations of carbon nanotubes adsorbed on Si(001) [Internet]. Physical Review Letters. 2003 ; 91( 16): 166802/1-166802/4.[citado 2024 jul. 02 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000091000016166802000001&idtype=cvips
Vancouver
Orellana W, Miwa RH, Fazzio A. First-principles calculations of carbon nanotubes adsorbed on Si(001) [Internet]. Physical Review Letters. 2003 ; 91( 16): 166802/1-166802/4.[citado 2024 jul. 02 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000091000016166802000001&idtype=cvips
Artigo de periodico
Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds (2001)
Ramos, L. E.; Teles, L. K.; Scolfaro, Luisa Maria Ribeiro; Castineira, J L P; Rosa, A L; Leite, J. R.
Source: Physical Review B. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, SEMICONDUTORES, SUPERFÍCIE FÍSICA
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ABNT
RAMOS, L. E. et al. Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds. Physical Review B, v. 63, n. 16, p. 5210/1-5210/10, 2001Tradução . . Disponível em: https://doi.org/10.1103/physrevb.63.165210. Acesso em: 02 jul. 2024.
APA
Ramos, L. E., Teles, L. K., Scolfaro, L. M. R., Castineira, J. L. P., Rosa, A. L., & Leite, J. R. (2001). Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds. Physical Review B, 63( 16), 5210/1-5210/10. doi:10.1103/physrevb.63.165210
NLM
Ramos LE, Teles LK, Scolfaro LMR, Castineira JLP, Rosa AL, Leite JR. Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds [Internet]. Physical Review B. 2001 ; 63( 16): 5210/1-5210/10.[citado 2024 jul. 02 ] Available from: https://doi.org/10.1103/physrevb.63.165210
Vancouver
Ramos LE, Teles LK, Scolfaro LMR, Castineira JLP, Rosa AL, Leite JR. Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds [Internet]. Physical Review B. 2001 ; 63( 16): 5210/1-5210/10.[citado 2024 jul. 02 ] Available from: https://doi.org/10.1103/physrevb.63.165210
Artigo de periodico
Stacking fault effects in pure and n-type doped GaAs (2001)
Schmidt, T M; Justo Filho, João Francisco ; Fazzio, Adalberto
Source: Applied Physics Letters. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, SEMICONDUTORES
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ABNT
SCHMIDT, T M e JUSTO FILHO, João Francisco e FAZZIO, Adalberto. Stacking fault effects in pure and n-type doped GaAs. Applied Physics Letters, v. 78, n. 7, p. 907-909, 2001Tradução . . Disponível em: https://doi.org/10.1063/1.1347005. Acesso em: 02 jul. 2024.
APA
Schmidt, T. M., Justo Filho, J. F., & Fazzio, A. (2001). Stacking fault effects in pure and n-type doped GaAs. Applied Physics Letters, 78( 7), 907-909. doi:10.1063/1.1347005
NLM
Schmidt TM, Justo Filho JF, Fazzio A. Stacking fault effects in pure and n-type doped GaAs [Internet]. Applied Physics Letters. 2001 ; 78( 7): 907-909.[citado 2024 jul. 02 ] Available from: https://doi.org/10.1063/1.1347005
Vancouver
Schmidt TM, Justo Filho JF, Fazzio A. Stacking fault effects in pure and n-type doped GaAs [Internet]. Applied Physics Letters. 2001 ; 78( 7): 907-909.[citado 2024 jul. 02 ] Available from: https://doi.org/10.1063/1.1347005

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