Filtros : "Suécia" "Thin Solid Films" Removidos: "Clarivate Analytics" "MICROBIOLOGIA" "PENNA, THEREZA CHRISTINA VESSONI" Limpar

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  • Source: Thin Solid Films. Unidade: EP

    Subjects: FILMES FINOS, TENSÃO RESIDUAL, RESISTÊNCIA DOS MATERIAIS, PLASMA (PROCESSOS), TITÂNIO, NITRATOS

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      BENEGRA, Marjorie et al. Residual stresses in titanium nitride thin films deposited by direct current and pulsed direct current unbalanced magnetron sputtering. Thin Solid Films, v. 494, n. Ja 2006, p. 146-150, 2006Tradução . . Disponível em: https://doi.org/10.1016/j.tsf.2005.08.214. Acesso em: 08 nov. 2024.
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      Benegra, M., Lamas, D. G., Fernández de Rapp, M. E., Mingolo, N., Kunrath, A. O., & Souza, R. M. de. (2006). Residual stresses in titanium nitride thin films deposited by direct current and pulsed direct current unbalanced magnetron sputtering. Thin Solid Films, 494( Ja 2006), 146-150. doi:10.1016/j.tsf.2005.08.214
    • NLM

      Benegra M, Lamas DG, Fernández de Rapp ME, Mingolo N, Kunrath AO, Souza RM de. Residual stresses in titanium nitride thin films deposited by direct current and pulsed direct current unbalanced magnetron sputtering [Internet]. Thin Solid Films. 2006 ; 494( Ja 2006): 146-150.[citado 2024 nov. 08 ] Available from: https://doi.org/10.1016/j.tsf.2005.08.214
    • Vancouver

      Benegra M, Lamas DG, Fernández de Rapp ME, Mingolo N, Kunrath AO, Souza RM de. Residual stresses in titanium nitride thin films deposited by direct current and pulsed direct current unbalanced magnetron sputtering [Internet]. Thin Solid Films. 2006 ; 494( Ja 2006): 146-150.[citado 2024 nov. 08 ] Available from: https://doi.org/10.1016/j.tsf.2005.08.214
  • Source: Thin Solid Films. Unidade: EP

    Subjects: FILMES FINOS, MECÂNICA DA FRATURA, PROPRIEDADES DOS MATERIAIS, COMPUTAÇÃO APLICADA, AÇO, RESISTÊNCIA DOS MATERIAIS, TITÂNIO, NITRATOS

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      PIANA, L A et al. Numerical and experimental analyses on the indentation of coated systems with substrates with different mechanical properties. Thin Solid Films, v. No 2005, n. 1-2, p. 197-203, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.tsf.2005.06.025. Acesso em: 08 nov. 2024.
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      Piana, L. A., Pérez Ruiz, E. A., Souza, R. M. de, Kunrath, A. O., & Strohaecker, T. R. (2005). Numerical and experimental analyses on the indentation of coated systems with substrates with different mechanical properties. Thin Solid Films, No 2005( 1-2), 197-203. doi:10.1016/j.tsf.2005.06.025
    • NLM

      Piana LA, Pérez Ruiz EA, Souza RM de, Kunrath AO, Strohaecker TR. Numerical and experimental analyses on the indentation of coated systems with substrates with different mechanical properties [Internet]. Thin Solid Films. 2005 ; No 2005( 1-2): 197-203.[citado 2024 nov. 08 ] Available from: https://doi.org/10.1016/j.tsf.2005.06.025
    • Vancouver

      Piana LA, Pérez Ruiz EA, Souza RM de, Kunrath AO, Strohaecker TR. Numerical and experimental analyses on the indentation of coated systems with substrates with different mechanical properties [Internet]. Thin Solid Films. 2005 ; No 2005( 1-2): 197-203.[citado 2024 nov. 08 ] Available from: https://doi.org/10.1016/j.tsf.2005.06.025
  • Source: Thin Solid Films. Unidade: IF

    Subjects: MATÉRIA CONDENSADA, MATERIAIS, EFEITO HALL, FOTOLUMINESCÊNCIA, PROPRIEDADES DOS MATERIAIS

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      LAMAS, T. E. et al. Smooth p-type GaAs(001) films grown by molecular-beam epitaxy using silicon as the dopant. Thin Solid Films, v. 474, n. 1-2, p. 25-30, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.tsf.2004.08.004. Acesso em: 08 nov. 2024.
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      Lamas, T. E., Quivy, A. A., Martini, S., Silva, M. J. da, & Leite, J. R. (2005). Smooth p-type GaAs(001) films grown by molecular-beam epitaxy using silicon as the dopant. Thin Solid Films, 474( 1-2), 25-30. doi:10.1016/j.tsf.2004.08.004
    • NLM

      Lamas TE, Quivy AA, Martini S, Silva MJ da, Leite JR. Smooth p-type GaAs(001) films grown by molecular-beam epitaxy using silicon as the dopant [Internet]. Thin Solid Films. 2005 ; 474( 1-2): 25-30.[citado 2024 nov. 08 ] Available from: https://doi.org/10.1016/j.tsf.2004.08.004
    • Vancouver

      Lamas TE, Quivy AA, Martini S, Silva MJ da, Leite JR. Smooth p-type GaAs(001) films grown by molecular-beam epitaxy using silicon as the dopant [Internet]. Thin Solid Films. 2005 ; 474( 1-2): 25-30.[citado 2024 nov. 08 ] Available from: https://doi.org/10.1016/j.tsf.2004.08.004
  • Source: Thin Solid Films. Unidade: IF

    Assunto: FILMES FINOS

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      ESCOTE, M T et al. Microestrutural and transport properties of LaNi'O IND. 3-'delta'' filmes grown on Si(111) by chemical solution deposition. Thin Solid Films, 2003Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TW0-49XNX6F-7-9&_cdi=5548&_orig=browse&_coverDate=11%2F24%2F2003&_sk=995549998&view=c&wchp=dGLbVlb-zSkWb&_acct=C000049650&_version=1&_userid=972067&md5=74ae4e335bf92c1a1757dd75aaf359a4&ie=f.pdf. Acesso em: 08 nov. 2024.
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      Escote, M. T., Pontes, F. M., Leite, E. R., Varela, J. A., Jardim, R. F., & Longo, E. (2003). Microestrutural and transport properties of LaNi'O IND. 3-'delta'' filmes grown on Si(111) by chemical solution deposition. Thin Solid Films. Recuperado de http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TW0-49XNX6F-7-9&_cdi=5548&_orig=browse&_coverDate=11%2F24%2F2003&_sk=995549998&view=c&wchp=dGLbVlb-zSkWb&_acct=C000049650&_version=1&_userid=972067&md5=74ae4e335bf92c1a1757dd75aaf359a4&ie=f.pdf
    • NLM

      Escote MT, Pontes FM, Leite ER, Varela JA, Jardim RF, Longo E. Microestrutural and transport properties of LaNi'O IND. 3-'delta'' filmes grown on Si(111) by chemical solution deposition [Internet]. Thin Solid Films. 2003 ;[citado 2024 nov. 08 ] Available from: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TW0-49XNX6F-7-9&_cdi=5548&_orig=browse&_coverDate=11%2F24%2F2003&_sk=995549998&view=c&wchp=dGLbVlb-zSkWb&_acct=C000049650&_version=1&_userid=972067&md5=74ae4e335bf92c1a1757dd75aaf359a4&ie=f.pdf
    • Vancouver

      Escote MT, Pontes FM, Leite ER, Varela JA, Jardim RF, Longo E. Microestrutural and transport properties of LaNi'O IND. 3-'delta'' filmes grown on Si(111) by chemical solution deposition [Internet]. Thin Solid Films. 2003 ;[citado 2024 nov. 08 ] Available from: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TW0-49XNX6F-7-9&_cdi=5548&_orig=browse&_coverDate=11%2F24%2F2003&_sk=995549998&view=c&wchp=dGLbVlb-zSkWb&_acct=C000049650&_version=1&_userid=972067&md5=74ae4e335bf92c1a1757dd75aaf359a4&ie=f.pdf
  • Source: Thin Solid Films. Unidade: IF

    Subjects: FILMES FINOS, MATERIAIS (PROPRIEDADES ELÉTRICAS)

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      TOKUMOTO, M S et al. Structural electrical and optical properties of undoped and indium doped ZnO thin films prepared by the pyrosol process at different temperatures. Thin Solid Films, v. 416, n. 1-2, p. 284-293, 2002Tradução . . Disponível em: https://doi.org/10.1016/s0040-6090(02)00531-x. Acesso em: 08 nov. 2024.
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      Tokumoto, M. S., Smith, A., Santilli, C. V., Pulcinelli, S. H., Craievich, A. F., & Elkaim, E. (2002). Structural electrical and optical properties of undoped and indium doped ZnO thin films prepared by the pyrosol process at different temperatures. Thin Solid Films, 416( 1-2), 284-293. doi:10.1016/s0040-6090(02)00531-x
    • NLM

      Tokumoto MS, Smith A, Santilli CV, Pulcinelli SH, Craievich AF, Elkaim E. Structural electrical and optical properties of undoped and indium doped ZnO thin films prepared by the pyrosol process at different temperatures [Internet]. Thin Solid Films. 2002 ; 416( 1-2): 284-293.[citado 2024 nov. 08 ] Available from: https://doi.org/10.1016/s0040-6090(02)00531-x
    • Vancouver

      Tokumoto MS, Smith A, Santilli CV, Pulcinelli SH, Craievich AF, Elkaim E. Structural electrical and optical properties of undoped and indium doped ZnO thin films prepared by the pyrosol process at different temperatures [Internet]. Thin Solid Films. 2002 ; 416( 1-2): 284-293.[citado 2024 nov. 08 ] Available from: https://doi.org/10.1016/s0040-6090(02)00531-x
  • Source: Thin Solid Films. Unidades: IF, EP

    Subjects: ESPECTROSCOPIA DE RAIO X, ESPECTROMETRIA, FILMES FINOS

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      SCOPEL, Wanderla Luis et al. Local structure and bonds of amorphous silicon oxynitride thin films. Thin Solid Films, v. 413, n. 1-2, p. 59-64, 2002Tradução . . Disponível em: https://doi.org/10.1016/s0040-6090(02)00346-2. Acesso em: 08 nov. 2024.
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      Scopel, W. L., Fantini, M. C. de A., Alayo Chávez, M. I., & Pereyra, I. (2002). Local structure and bonds of amorphous silicon oxynitride thin films. Thin Solid Films, 413( 1-2), 59-64. doi:10.1016/s0040-6090(02)00346-2
    • NLM

      Scopel WL, Fantini MC de A, Alayo Chávez MI, Pereyra I. Local structure and bonds of amorphous silicon oxynitride thin films [Internet]. Thin Solid Films. 2002 ; 413( 1-2): 59-64.[citado 2024 nov. 08 ] Available from: https://doi.org/10.1016/s0040-6090(02)00346-2
    • Vancouver

      Scopel WL, Fantini MC de A, Alayo Chávez MI, Pereyra I. Local structure and bonds of amorphous silicon oxynitride thin films [Internet]. Thin Solid Films. 2002 ; 413( 1-2): 59-64.[citado 2024 nov. 08 ] Available from: https://doi.org/10.1016/s0040-6090(02)00346-2
  • Source: Thin Solid Films. Unidades: IF, EP

    Subjects: FÍSICA DE PLASMAS, DIELÉTRICOS

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      ALAYO CHÁVEZ, Marco Isaías et al. On the nitrogen and oxygen incorporation in plasma-enhanced chemical vapor deposition (PECVD) SiOxNy films. Thin Solid Films, v. 402, n. 1-2, p. 154-161, 2002Tradução . . Disponível em: https://doi.org/10.1016/S0040-6090(01)01685-6. Acesso em: 08 nov. 2024.
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      Alayo Chávez, M. I., Pereyra, I., Scopel, W. L., & Fantini, M. C. de A. (2002). On the nitrogen and oxygen incorporation in plasma-enhanced chemical vapor deposition (PECVD) SiOxNy films. Thin Solid Films, 402( 1-2), 154-161. doi:10.1016/S0040-6090(01)01685-6
    • NLM

      Alayo Chávez MI, Pereyra I, Scopel WL, Fantini MC de A. On the nitrogen and oxygen incorporation in plasma-enhanced chemical vapor deposition (PECVD) SiOxNy films [Internet]. Thin Solid Films. 2002 ; 402( 1-2): 154-161.[citado 2024 nov. 08 ] Available from: https://doi.org/10.1016/S0040-6090(01)01685-6
    • Vancouver

      Alayo Chávez MI, Pereyra I, Scopel WL, Fantini MC de A. On the nitrogen and oxygen incorporation in plasma-enhanced chemical vapor deposition (PECVD) SiOxNy films [Internet]. Thin Solid Films. 2002 ; 402( 1-2): 154-161.[citado 2024 nov. 08 ] Available from: https://doi.org/10.1016/S0040-6090(01)01685-6
  • Source: Thin Solid Films. Unidade: IF

    Assunto: FÍSICA DO ESTADO SÓLIDO

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      CATTANI, Mauro Sérgio Dorsa e SALVADORI, Maria Cecília Barbosa da Silveira. Critical exponents of diamond films: possible influence of spatially correlated noise. Thin Solid Films, v. 376, n. 1-2, p. 264-266, 2000Tradução . . Disponível em: https://doi.org/10.1016/s0040-6090(00)01400-0. Acesso em: 08 nov. 2024.
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      Cattani, M. S. D., & Salvadori, M. C. B. da S. (2000). Critical exponents of diamond films: possible influence of spatially correlated noise. Thin Solid Films, 376( 1-2), 264-266. doi:10.1016/s0040-6090(00)01400-0
    • NLM

      Cattani MSD, Salvadori MCB da S. Critical exponents of diamond films: possible influence of spatially correlated noise [Internet]. Thin Solid Films. 2000 ; 376( 1-2): 264-266.[citado 2024 nov. 08 ] Available from: https://doi.org/10.1016/s0040-6090(00)01400-0
    • Vancouver

      Cattani MSD, Salvadori MCB da S. Critical exponents of diamond films: possible influence of spatially correlated noise [Internet]. Thin Solid Films. 2000 ; 376( 1-2): 264-266.[citado 2024 nov. 08 ] Available from: https://doi.org/10.1016/s0040-6090(00)01400-0
  • Source: Thin Solid Films. Unidade: EP

    Assunto: FILMES

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      MANSANO, Ronaldo Domingues et al. Effects of the methane content on the characteristics of diamond-like carbon films produced by sputtering. Thin Solid Films, n. 373, p. 243-246, 2000Tradução . . Disponível em: https://doi.org/10.1016/s0040-6090(00)01088-9. Acesso em: 08 nov. 2024.
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      Mansano, R. D., Massi, M., Zambom, L. da S., Verdonck, P. B., Nogueira, P. M., Maciel, H. S., & Otani, C. (2000). Effects of the methane content on the characteristics of diamond-like carbon films produced by sputtering. Thin Solid Films, ( 373), 243-246. doi:10.1016/s0040-6090(00)01088-9
    • NLM

      Mansano RD, Massi M, Zambom L da S, Verdonck PB, Nogueira PM, Maciel HS, Otani C. Effects of the methane content on the characteristics of diamond-like carbon films produced by sputtering [Internet]. Thin Solid Films. 2000 ;( 373): 243-246.[citado 2024 nov. 08 ] Available from: https://doi.org/10.1016/s0040-6090(00)01088-9
    • Vancouver

      Mansano RD, Massi M, Zambom L da S, Verdonck PB, Nogueira PM, Maciel HS, Otani C. Effects of the methane content on the characteristics of diamond-like carbon films produced by sputtering [Internet]. Thin Solid Films. 2000 ;( 373): 243-246.[citado 2024 nov. 08 ] Available from: https://doi.org/10.1016/s0040-6090(00)01088-9
  • Source: Thin Solid Films. Unidade: FFCLRP

    Assunto: QUÍMICA

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      SANTOS, Juliane Pereira et al. Palmitic acid and aquo-ruthenium complex monolayers at the liquid-air interface and electroactive Langmuir-Blodgett films. Thin Solid Films, v. 349, p. 238-243, 1999Tradução . . Disponível em: https://doi.org/10.1016/s0040-6090(99)00179-0. Acesso em: 08 nov. 2024.
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      Santos, J. P., Zaniquelli, M. E. D., Batalini, C., & De Giovani, W. F. (1999). Palmitic acid and aquo-ruthenium complex monolayers at the liquid-air interface and electroactive Langmuir-Blodgett films. Thin Solid Films, 349, 238-243. doi:10.1016/s0040-6090(99)00179-0
    • NLM

      Santos JP, Zaniquelli MED, Batalini C, De Giovani WF. Palmitic acid and aquo-ruthenium complex monolayers at the liquid-air interface and electroactive Langmuir-Blodgett films [Internet]. Thin Solid Films. 1999 ; 349 238-243.[citado 2024 nov. 08 ] Available from: https://doi.org/10.1016/s0040-6090(99)00179-0
    • Vancouver

      Santos JP, Zaniquelli MED, Batalini C, De Giovani WF. Palmitic acid and aquo-ruthenium complex monolayers at the liquid-air interface and electroactive Langmuir-Blodgett films [Internet]. Thin Solid Films. 1999 ; 349 238-243.[citado 2024 nov. 08 ] Available from: https://doi.org/10.1016/s0040-6090(99)00179-0

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