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Artigo de periodico
Atomic-scale characterization of single and double layers of InAs and InAlAs Stranski-Krastanov quantum dots (2022)
Gajjela, Raja Sekhar Reddy ; Alzeidan, Ahmad ; Curbelo, Victor Manuel Orlando ; Quivy, Alain André ; koenraad, Paul M
Source: Physical Review Materials. Unidade: IF
Assunto: MICROSCOPIA DE FORÇA ATÔMICA
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ABNT
GAJJELA, Raja Sekhar Reddy et al. Atomic-scale characterization of single and double layers of InAs and InAlAs Stranski-Krastanov quantum dots. Physical Review Materials, v. 6, 2022Tradução . . Disponível em: https://doi.org/10.1103/PhysRevMaterials.6.114604. Acesso em: 18 nov. 2024.
APA
Gajjela, R. S. R., Alzeidan, A., Curbelo, V. M. O., Quivy, A. A., & koenraad, P. M. (2022). Atomic-scale characterization of single and double layers of InAs and InAlAs Stranski-Krastanov quantum dots. Physical Review Materials, 6. doi:10.1103/PhysRevMaterials.6.114604
NLM
Gajjela RSR, Alzeidan A, Curbelo VMO, Quivy AA, koenraad PM. Atomic-scale characterization of single and double layers of InAs and InAlAs Stranski-Krastanov quantum dots [Internet]. Physical Review Materials. 2022 ; 6[citado 2024 nov. 18 ] Available from: https://doi.org/10.1103/PhysRevMaterials.6.114604
Vancouver
Gajjela RSR, Alzeidan A, Curbelo VMO, Quivy AA, koenraad PM. Atomic-scale characterization of single and double layers of InAs and InAlAs Stranski-Krastanov quantum dots [Internet]. Physical Review Materials. 2022 ; 6[citado 2024 nov. 18 ] Available from: https://doi.org/10.1103/PhysRevMaterials.6.114604
Trabalho de evento-resumo
ON THE RELATION BETWEEN GROWTH, QUANTUM-DOT MORPHOLOGY, OPTOELECTRONIC PROPERTIES, AND PERFORMANCE IN InAs/GaAs QUANTUM DOT INTERMEDIATE BAND SOLAR CELL (2022)
Santos, Thales Borrely dos ; Alzeidan, Ahmad ; Quivy, Alain André ; Jacobsen, Gabriel Marques ; Teodoro, M D ; Gajjela, Raja Sekhar Reddy ; Hendriks, A L; Koenraad, P M
Source: Resumos. Conference titles: Encontro de Outono da Sociedade Brasileira de Física. Unidade: IF
Assunto: ÓPTICA ELETRÔNICA
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SANTOS, Thales Borrely dos et al. ON THE RELATION BETWEEN GROWTH, QUANTUM-DOT MORPHOLOGY, OPTOELECTRONIC PROPERTIES, AND PERFORMANCE IN InAs/GaAs QUANTUM DOT INTERMEDIATE BAND SOLAR CELL. 2022, Anais.. São Paulo: Sociedade Brasileira de Física, 2022. . Acesso em: 18 nov. 2024.
APA
Santos, T. B. dos, Alzeidan, A., Quivy, A. A., Jacobsen, G. M., Teodoro, M. D., Gajjela, R. S. R., et al. (2022). ON THE RELATION BETWEEN GROWTH, QUANTUM-DOT MORPHOLOGY, OPTOELECTRONIC PROPERTIES, AND PERFORMANCE IN InAs/GaAs QUANTUM DOT INTERMEDIATE BAND SOLAR CELL. In Resumos. São Paulo: Sociedade Brasileira de Física.
NLM
Santos TB dos, Alzeidan A, Quivy AA, Jacobsen GM, Teodoro MD, Gajjela RSR, Hendriks AL, Koenraad PM. ON THE RELATION BETWEEN GROWTH, QUANTUM-DOT MORPHOLOGY, OPTOELECTRONIC PROPERTIES, AND PERFORMANCE IN InAs/GaAs QUANTUM DOT INTERMEDIATE BAND SOLAR CELL. Resumos. 2022 ;[citado 2024 nov. 18 ]
Vancouver
Santos TB dos, Alzeidan A, Quivy AA, Jacobsen GM, Teodoro MD, Gajjela RSR, Hendriks AL, Koenraad PM. ON THE RELATION BETWEEN GROWTH, QUANTUM-DOT MORPHOLOGY, OPTOELECTRONIC PROPERTIES, AND PERFORMANCE IN InAs/GaAs QUANTUM DOT INTERMEDIATE BAND SOLAR CELL. Resumos. 2022 ;[citado 2024 nov. 18 ]
Artigo de periodico
Effect of As flux on InAs submonolayer quantum dot formation for infrared photodetectors (2022)
Alzeidan, A.; Cantalice, T. F.; Vallejo, K. D.; Gajjela, R. S. R.; Hendriks, A. L.; Simmonds, P. J.; Koenraad, P. M.; Quivy, Alain André
Source: Sensors and Actuators A: Physical. Unidade: IF
Subjects: FÍSICA MODERNA, NANOTECNOLOGIA, MICROSCOPIA DE FORÇA ATÔMICA, RADIAÇÃO INFRAVERMELHA, FOTODETECTORES
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ABNT
ALZEIDAN, A. et al. Effect of As flux on InAs submonolayer quantum dot formation for infrared photodetectors. Sensors and Actuators A: Physical, v. 334, 2022Tradução . . Disponível em: https://doi.org/10.1016/j.sna.2021.113357. Acesso em: 18 nov. 2024.
APA
Alzeidan, A., Cantalice, T. F., Vallejo, K. D., Gajjela, R. S. R., Hendriks, A. L., Simmonds, P. J., et al. (2022). Effect of As flux on InAs submonolayer quantum dot formation for infrared photodetectors. Sensors and Actuators A: Physical, 334. doi:10.1016/j.sna.2021.113357
NLM
Alzeidan A, Cantalice TF, Vallejo KD, Gajjela RSR, Hendriks AL, Simmonds PJ, Koenraad PM, Quivy AA. Effect of As flux on InAs submonolayer quantum dot formation for infrared photodetectors [Internet]. Sensors and Actuators A: Physical. 2022 ; 334[citado 2024 nov. 18 ] Available from: https://doi.org/10.1016/j.sna.2021.113357
Vancouver
Alzeidan A, Cantalice TF, Vallejo KD, Gajjela RSR, Hendriks AL, Simmonds PJ, Koenraad PM, Quivy AA. Effect of As flux on InAs submonolayer quantum dot formation for infrared photodetectors [Internet]. Sensors and Actuators A: Physical. 2022 ; 334[citado 2024 nov. 18 ] Available from: https://doi.org/10.1016/j.sna.2021.113357
Relatorio tecnico
Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots (2020)
Gajjela, R.S.R. ; Hendriks, A. L.; Koenraad, P M; Alzeidan, Ahmad; Cantalice, Tiago Fernandes de; Quivy, Alain André
Unidade: IF
Subjects: FÍSICA DA MATÉRIA CONDENSADA, FÍSICA MODERNA, MICROSCOPIA DE FORÇA ATÔMICA, SUPERFÍCIES, ÍNDIO (ELEMENTO QUÍMICO), ARSÊNIO
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ABNT
GAJJELA, R.S.R. et al. Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/pdf/2008.11711.pdf. Acesso em: 18 nov. 2024. , 2020
APA
Gajjela, R. S. R., Hendriks, A. L., Koenraad, P. M., Alzeidan, A., Cantalice, T. F. de, & Quivy, A. A. (2020). Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/pdf/2008.11711.pdf
NLM
Gajjela RSR, Hendriks AL, Koenraad PM, Alzeidan A, Cantalice TF de, Quivy AA. Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots [Internet]. 2020 ;[citado 2024 nov. 18 ] Available from: https://arxiv.org/pdf/2008.11711.pdf
Vancouver
Gajjela RSR, Hendriks AL, Koenraad PM, Alzeidan A, Cantalice TF de, Quivy AA. Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots [Internet]. 2020 ;[citado 2024 nov. 18 ] Available from: https://arxiv.org/pdf/2008.11711.pdf
Artigo de periodico
Strong photovoltaic effect in high-density InAlAs and InAs/InAlAs quantum-dot infrared photodetectors (2020)
Claro, M. S.; Stroppa, D. G.; Silva, Euzi Conceição Fernandes da ; Quivy, Alain André
Source: Sensors and Actuators A: Physical. Unidade: IF
Subjects: FÍSICA MODERNA, EPITAXIA POR FEIXE MOLECULAR, FOTODETECTORES, RADIAÇÃO INFRAVERMELHA, SEMICONDUTIVIDADE
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ABNT
CLARO, M. S. et al. Strong photovoltaic effect in high-density InAlAs and InAs/InAlAs quantum-dot infrared photodetectors. Sensors and Actuators A: Physical, v. 315, 2020Tradução . . Disponível em: https://doi.org/10.1016/j.sna.2020.112262. Acesso em: 18 nov. 2024.
APA
Claro, M. S., Stroppa, D. G., Silva, E. C. F. da, & Quivy, A. A. (2020). Strong photovoltaic effect in high-density InAlAs and InAs/InAlAs quantum-dot infrared photodetectors. Sensors and Actuators A: Physical, 315. doi:10.1016/j.sna.2020.112262
NLM
Claro MS, Stroppa DG, Silva ECF da, Quivy AA. Strong photovoltaic effect in high-density InAlAs and InAs/InAlAs quantum-dot infrared photodetectors [Internet]. Sensors and Actuators A: Physical. 2020 ; 315[citado 2024 nov. 18 ] Available from: https://doi.org/10.1016/j.sna.2020.112262
Vancouver
Claro MS, Stroppa DG, Silva ECF da, Quivy AA. Strong photovoltaic effect in high-density InAlAs and InAs/InAlAs quantum-dot infrared photodetectors [Internet]. Sensors and Actuators A: Physical. 2020 ; 315[citado 2024 nov. 18 ] Available from: https://doi.org/10.1016/j.sna.2020.112262
Artigo de periodico
Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots (2020)
Gajjela, R.S.R. ; Hendriks, A. L.; Cantalice, T. F.; Quivy, Alain André ; koenraad, Paul
Source: Physical Review Materials. Unidade: IF
Subjects: FÍSICA DA MATÉRIA CONDENSADA, FÍSICA MODERNA, MICROSCOPIA DE FORÇA ATÔMICA, SUPERFÍCIES, ÍNDIO (ELEMENTO QUÍMICO), ARSÊNIO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GAJJELA, R.S.R. et al. Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots. Physical Review Materials, v. 4, n. 11, 2020Tradução . . Disponível em: https://doi.org/10.1103/PhysRevMaterials.4.114601. Acesso em: 18 nov. 2024.
APA
Gajjela, R. S. R., Hendriks, A. L., Cantalice, T. F., Quivy, A. A., & koenraad, P. (2020). Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots. Physical Review Materials, 4( 11). doi:10.1103/PhysRevMaterials.4.114601
NLM
Gajjela RSR, Hendriks AL, Cantalice TF, Quivy AA, koenraad P. Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots [Internet]. Physical Review Materials. 2020 ; 4( 11):[citado 2024 nov. 18 ] Available from: https://doi.org/10.1103/PhysRevMaterials.4.114601
Vancouver
Gajjela RSR, Hendriks AL, Cantalice TF, Quivy AA, koenraad P. Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots [Internet]. Physical Review Materials. 2020 ; 4( 11):[citado 2024 nov. 18 ] Available from: https://doi.org/10.1103/PhysRevMaterials.4.114601

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