Biaxial stress simulation and electrical characterization of triple-gate SOI nMOSFETs. (2012)
- Authors:
- USP affiliated authors: MARTINO, JOÃO ANTONIO - EP ; BÜHLER, RUDOLF THEODERICH - EP ; AGOPIAN, PAULA GHEDINI DER - EP
- Unidade: EP
- DOI: 10.1149/04901.0145ecst
- Assunto: MICROELETRÔNICA
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Publisher place: Pennington
- Date published: 2012
- Source:
- Conference titles: International Symposium on Microelectronics Technology and Devices
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
BÜHLER, Rudolf Theoderich et al. Biaxial stress simulation and electrical characterization of triple-gate SOI nMOSFETs. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://doi.org/10.1149/04901.0145ecst. Acesso em: 26 jan. 2026. -
APA
Bühler, R. T., Agopian, P. G. D., Simoen, E., Claeys, C., & Martino, J. A. (2012). Biaxial stress simulation and electrical characterization of triple-gate SOI nMOSFETs. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. doi:10.1149/04901.0145ecst -
NLM
Bühler RT, Agopian PGD, Simoen E, Claeys C, Martino JA. Biaxial stress simulation and electrical characterization of triple-gate SOI nMOSFETs. [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2026 jan. 26 ] Available from: https://doi.org/10.1149/04901.0145ecst -
Vancouver
Bühler RT, Agopian PGD, Simoen E, Claeys C, Martino JA. Biaxial stress simulation and electrical characterization of triple-gate SOI nMOSFETs. [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2026 jan. 26 ] Available from: https://doi.org/10.1149/04901.0145ecst - Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source
- Influence of interface trap density on vertical NW-TFETs with different source composition
- The impact of the temperature on In0.53Ga0.47As nTFETs
- Study of line-TFET analog performance comparing with other TFET and MOSFET architectures
- Experimental comparison between tensile and compressive uniaxially stressed MuGFETs under X-ray radiation
- Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices
- Experimental Comparison Between Trigate p-TFET and p-FinFET Analog Performance as a Function of Temperature
- Different stress techniques and their efficiency on triple-gate SOI n-MOSFETs
- Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs
- Threshold voltage extraction in Tunnel FETs
Informações sobre o DOI: 10.1149/04901.0145ecst (Fonte: oaDOI API)
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