A tight-binding model for the band dispersion in rhombohedral topological insulators over the whole Brilluoin zone (2018)
- Authors:
- USP affiliated authors: SILVA, ANTONIO JOSE ROQUE DA - IF ; FAZZIO, ADALBERTO - IF
- Unidade: IF
- Subjects: FÍSICA DA MATÉRIA CONDENSADA; MATERIAIS NANOESTRUTURADOS; NANOTECNOLOGIA
- Language: Inglês
- Imprenta:
-
ABNT
ACOSTA, Carlos Mera et al. A tight-binding model for the band dispersion in rhombohedral topological insulators over the whole Brilluoin zone. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/abs/1802.07864. Acesso em: 20 abr. 2024. , 2018 -
APA
Acosta, C. M., Lima, M. P., Lewenkopf, C. H., Silva, A. J. R. da, & Fazzio, A. (2018). A tight-binding model for the band dispersion in rhombohedral topological insulators over the whole Brilluoin zone. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/abs/1802.07864 -
NLM
Acosta CM, Lima MP, Lewenkopf CH, Silva AJR da, Fazzio A. A tight-binding model for the band dispersion in rhombohedral topological insulators over the whole Brilluoin zone [Internet]. 2018 ;[citado 2024 abr. 20 ] Available from: https://arxiv.org/abs/1802.07864 -
Vancouver
Acosta CM, Lima MP, Lewenkopf CH, Silva AJR da, Fazzio A. A tight-binding model for the band dispersion in rhombohedral topological insulators over the whole Brilluoin zone [Internet]. 2018 ;[citado 2024 abr. 20 ] Available from: https://arxiv.org/abs/1802.07864 - Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'
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