Heme B-like defects in N-doped carbon nanotubes (2009)
- Authors:
- USP affiliated authors: FAZZIO, ADALBERTO - IF ; SILVA, ANTONIO JOSE ROQUE DA - IF
- Unidade: IF
- Subjects: MATERIAIS; NANOTECNOLOGIA
- Language: Inglês
- Imprenta:
- Publisher: ICAM
- Publisher place: Rio de Janeiro
- Date published: 2009
- Source:
- Título: Resumos
- Conference titles: International Conference on Advanced Materials
-
ABNT
ALMEIDA, J M et al. Heme B-like defects in N-doped carbon nanotubes. 2009, Anais.. Rio de Janeiro: ICAM, 2009. Disponível em: http://www.icam2009.com/submission/autor/arquivos/C556.pdf. Acesso em: 27 dez. 2025. -
APA
Almeida, J. M., Rocha, A. R., Fazzio, A., & Silva, A. J. R. da. (2009). Heme B-like defects in N-doped carbon nanotubes. In Resumos. Rio de Janeiro: ICAM. Recuperado de http://www.icam2009.com/submission/autor/arquivos/C556.pdf -
NLM
Almeida JM, Rocha AR, Fazzio A, Silva AJR da. Heme B-like defects in N-doped carbon nanotubes [Internet]. Resumos. 2009 ;[citado 2025 dez. 27 ] Available from: http://www.icam2009.com/submission/autor/arquivos/C556.pdf -
Vancouver
Almeida JM, Rocha AR, Fazzio A, Silva AJR da. Heme B-like defects in N-doped carbon nanotubes [Internet]. Resumos. 2009 ;[citado 2025 dez. 27 ] Available from: http://www.icam2009.com/submission/autor/arquivos/C556.pdf - 'HF' defects in 'HF''O' IND. 2'/'SI'
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- Ab initio calculations for a hypothetical material: silicon nanotubes
- Stability investigation and thermal behavior of a hypothetical silicon nanotube
- Influence of surface degrees of freedom on the adsorption of Ge ad-atoms on Si(100)
- Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'
- Computer simulations of gold nanowires
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