Ab initio studies of the 'Si IND.1-X' 'Ge IND.X' alloy and its intrinsic defects (2001)
- Authors:
- USP affiliated authors: SILVA, ANTONIO JOSE ROQUE DA - IF ; FAZZIO, ADALBERTO - IF
- Unidade: IF
- Subjects: SEMICONDUTORES; SISTEMAS DINÂMICOS; ESTABILIDADE DE SISTEMAS
- Language: Inglês
- Imprenta:
- Source:
- Título: Computational Materials Science
- ISSN: 0927-0256
- Volume/Número/Paginação/Ano: v. 22, n. 1-2, p. 62-66, 2001
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ABNT
VENEZUELA, P et al. Ab initio studies of the 'Si IND.1-X' 'Ge IND.X' alloy and its intrinsic defects. Computational Materials Science, v. 22, n. 1-2, p. 62-66, 2001Tradução . . Acesso em: 16 mar. 2026. -
APA
Venezuela, P., Silva, A. J. R. da, Silva, C. da, Dalpian, G. M., & Fazzio, A. (2001). Ab initio studies of the 'Si IND.1-X' 'Ge IND.X' alloy and its intrinsic defects. Computational Materials Science, 22( 1-2), 62-66. -
NLM
Venezuela P, Silva AJR da, Silva C da, Dalpian GM, Fazzio A. Ab initio studies of the 'Si IND.1-X' 'Ge IND.X' alloy and its intrinsic defects. Computational Materials Science. 2001 ; 22( 1-2): 62-66.[citado 2026 mar. 16 ] -
Vancouver
Venezuela P, Silva AJR da, Silva C da, Dalpian GM, Fazzio A. Ab initio studies of the 'Si IND.1-X' 'Ge IND.X' alloy and its intrinsic defects. Computational Materials Science. 2001 ; 22( 1-2): 62-66.[citado 2026 mar. 16 ] - Comparative study of defect energetics in 'HF' IND. 2' and 'SI' IND. 2'
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