Ab initio studies of the 'Si IND.1-X' 'Ge IND.X' alloy and its intrinsic defects (2001)
- Autores:
- Autores USP: SILVA, ANTONIO JOSE ROQUE DA - IF ; FAZZIO, ADALBERTO - IF
- Unidade: IF
- Assuntos: SEMICONDUTORES; SISTEMAS DINÂMICOS; ESTABILIDADE DE SISTEMAS
- Idioma: Inglês
- Imprenta:
- Fonte:
- Título do periódico: Computational Materials Science
- ISSN: 0927-0256
- Volume/Número/Paginação/Ano: v. 22, n. 1-2, p. 62-66, 2001
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ABNT
VENEZUELA, P et al. Ab initio studies of the 'Si IND.1-X' 'Ge IND.X' alloy and its intrinsic defects. Computational Materials Science, v. 22, n. 1-2, p. 62-66, 2001Tradução . . Acesso em: 25 abr. 2024. -
APA
Venezuela, P., Silva, A. J. R. da, Silva, C. da, Dalpian, G. M., & Fazzio, A. (2001). Ab initio studies of the 'Si IND.1-X' 'Ge IND.X' alloy and its intrinsic defects. Computational Materials Science, 22( 1-2), 62-66. -
NLM
Venezuela P, Silva AJR da, Silva C da, Dalpian GM, Fazzio A. Ab initio studies of the 'Si IND.1-X' 'Ge IND.X' alloy and its intrinsic defects. Computational Materials Science. 2001 ; 22( 1-2): 62-66.[citado 2024 abr. 25 ] -
Vancouver
Venezuela P, Silva AJR da, Silva C da, Dalpian GM, Fazzio A. Ab initio studies of the 'Si IND.1-X' 'Ge IND.X' alloy and its intrinsic defects. Computational Materials Science. 2001 ; 22( 1-2): 62-66.[citado 2024 abr. 25 ] - Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'
- Influence of surface degrees of freedom on the adsorption of Ge ad-atoms on Si(100)
- Eletronic and structural properties of 'C IND. 59'Si on a hydrogenated Si(100) surface
- A possible route to grow a (Mn:'Si IND. (1-x)'Ge IND. x')-based diluted magnetic semiconductor
- Adsoption of gold on carbon nanotubes
- Computer simulations of gold nanowires
- Ab initio study of an iron atom interacting with single-wall carbon nanotubes
- Electronic and magnetic properties of iron chains on carbon nanotubes
- Adsorption and incorporation of Mn on Si(100)
- Effect of impurities in the breaking of gold nanowires
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