Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X' (2002)
- Authors:
- USP affiliated authors: SILVA, ANTONIO JOSE ROQUE DA - IF ; FAZZIO, ADALBERTO - IF
- Unidade: IF
- Subjects: MATÉRIA CONDENSADA; FENÔMENO DE TRANSPORTE
- Language: Inglês
- Imprenta:
- Source:
- Título: Physical Review B
- ISSN: 0163-1829
- Volume/Número/Paginação/Ano: v. 65, n. 19, p. 193306/1-193306/ , 2002
-
ABNT
VENEZUELA, P et al. Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'. Physical Review B, v. 65, n. 19, p. 193306/1-193306/ , 2002Tradução . . Acesso em: 26 dez. 2025. -
APA
Venezuela, P., Dalpian, G. M., Silva, A. J. R. da, & Fazzio, A. (2002). Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'. Physical Review B, 65( 19), 193306/1-193306/ . -
NLM
Venezuela P, Dalpian GM, Silva AJR da, Fazzio A. Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'. Physical Review B. 2002 ; 65( 19): 193306/1-193306/ .[citado 2025 dez. 26 ] -
Vancouver
Venezuela P, Dalpian GM, Silva AJR da, Fazzio A. Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'. Physical Review B. 2002 ; 65( 19): 193306/1-193306/ .[citado 2025 dez. 26 ] - 'HF' defects in 'HF''O' IND. 2'/'SI'
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