Adiabatic molecular dynamic: an approach to simulate light atoms (2016)
- Authors:
- USP affiliated authors: FAZZIO, ADALBERTO - IF ; SILVA, ANTONIO JOSE ROQUE DA - IF
- Unidade: IF
- Subjects: FÍSICA DA MATÉRIA CONDENSADA; MATERIAIS NANOESTRUTURADOS
- Language: Inglês
- Imprenta:
- Source:
- Título: Posters - Resumo
- Conference titles: Encontro de Física |d ( 2016 |c Natal, RN, Brasil )
-
ABNT
HOBI JUNIOR, Edwin e FAZZIO, Adalberto e SILVA, Antonio Jose Roque da. Adiabatic molecular dynamic: an approach to simulate light atoms. 2016, Anais.. São Paulo: SBF, 2016. Disponível em: http://www1.sbfisica.org.br/eventos/enf/2016/sys/resumos/R1309-1.pdf. Acesso em: 27 dez. 2025. -
APA
Hobi Junior, E., Fazzio, A., & Silva, A. J. R. da. (2016). Adiabatic molecular dynamic: an approach to simulate light atoms. In Posters - Resumo. São Paulo: SBF. Recuperado de http://www1.sbfisica.org.br/eventos/enf/2016/sys/resumos/R1309-1.pdf -
NLM
Hobi Junior E, Fazzio A, Silva AJR da. Adiabatic molecular dynamic: an approach to simulate light atoms [Internet]. Posters - Resumo. 2016 ;[citado 2025 dez. 27 ] Available from: http://www1.sbfisica.org.br/eventos/enf/2016/sys/resumos/R1309-1.pdf -
Vancouver
Hobi Junior E, Fazzio A, Silva AJR da. Adiabatic molecular dynamic: an approach to simulate light atoms [Internet]. Posters - Resumo. 2016 ;[citado 2025 dez. 27 ] Available from: http://www1.sbfisica.org.br/eventos/enf/2016/sys/resumos/R1309-1.pdf - 'HF' defects in 'HF''O' IND. 2'/'SI'
- A tight-binding model for the band dispersion in rhombohedral topological insulators over the whole brilluoin zone
- Bundling up carbon nanotubes through Wigner defects
- Heme B-like defects in N-doped carbon nanotubes
- Electric field induces doping in graphene bilayers on hexagonal boron nitride substrates
- Self-interstitial defect in germanium
- Ab initio calculations for a hypothetical material: silicon nanotubes
- Stability investigation and thermal behavior of a hypothetical silicon nanotube
- Influence of surface degrees of freedom on the adsorption of Ge ad-atoms on Si(100)
- Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
