A tight-binding model for the band dispersion in rhombohedral topological insulators over the whole brilluoin zone (2020)
- Authors:
- USP affiliated authors: FAZZIO, ADALBERTO - IF ; SILVA, ANTONIO JOSE ROQUE DA - IF
- Unidade: IF
- Subjects: ESTRUTURA ELETRÔNICA; TOPOLOGIA EM COMPUTAÇÃO
- Language: Inglês
- Imprenta:
-
ABNT
ACOSTA, Carlos Mera et al. A tight-binding model for the band dispersion in rhombohedral topological insulators over the whole brilluoin zone. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/pdf/1802.07864.pdf. Acesso em: 27 dez. 2025. , 2020 -
APA
Acosta, C. M., Lima, M. P., Lewenkopf, C. H., Fazzio, A., & Silva, A. J. R. da. (2020). A tight-binding model for the band dispersion in rhombohedral topological insulators over the whole brilluoin zone. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/pdf/1802.07864.pdf -
NLM
Acosta CM, Lima MP, Lewenkopf CH, Fazzio A, Silva AJR da. A tight-binding model for the band dispersion in rhombohedral topological insulators over the whole brilluoin zone [Internet]. 2020 ;[citado 2025 dez. 27 ] Available from: https://arxiv.org/pdf/1802.07864.pdf -
Vancouver
Acosta CM, Lima MP, Lewenkopf CH, Fazzio A, Silva AJR da. A tight-binding model for the band dispersion in rhombohedral topological insulators over the whole brilluoin zone [Internet]. 2020 ;[citado 2025 dez. 27 ] Available from: https://arxiv.org/pdf/1802.07864.pdf - 'HF' defects in 'HF''O' IND. 2'/'SI'
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- Stability investigation and thermal behavior of a hypothetical silicon nanotube
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- Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'
- Computer simulations of gold nanowires
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