A tight-binding model for the band dispersion in rhombohedral topological insulators over the whole brilluoin zone (2020)
- Authors:
- USP affiliated authors: FAZZIO, ADALBERTO - IF ; SILVA, ANTONIO JOSE ROQUE DA - IF
- Unidade: IF
- Subjects: ESTRUTURA ELETRÔNICA; TOPOLOGIA EM COMPUTAÇÃO
- Language: Inglês
- Imprenta:
-
ABNT
ACOSTA, Carlos Mera et al. A tight-binding model for the band dispersion in rhombohedral topological insulators over the whole brilluoin zone. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/pdf/1802.07864.pdf. Acesso em: 10 nov. 2024. , 2020 -
APA
Acosta, C. M., Lima, M. P., Lewenkopf, C. H., Fazzio, A., & Silva, A. J. R. da. (2020). A tight-binding model for the band dispersion in rhombohedral topological insulators over the whole brilluoin zone. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/pdf/1802.07864.pdf -
NLM
Acosta CM, Lima MP, Lewenkopf CH, Fazzio A, Silva AJR da. A tight-binding model for the band dispersion in rhombohedral topological insulators over the whole brilluoin zone [Internet]. 2020 ;[citado 2024 nov. 10 ] Available from: https://arxiv.org/pdf/1802.07864.pdf -
Vancouver
Acosta CM, Lima MP, Lewenkopf CH, Fazzio A, Silva AJR da. A tight-binding model for the band dispersion in rhombohedral topological insulators over the whole brilluoin zone [Internet]. 2020 ;[citado 2024 nov. 10 ] Available from: https://arxiv.org/pdf/1802.07864.pdf - Electronic and structural properties of "C IND.59" Si on the monohydride Si(100) surface
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