'HF' defects in 'HF''O' IND. 2'/'SI' (2020)
- Authors:
- USP affiliated authors: FAZZIO, ADALBERTO - IF ; SILVA, ANTONIO JOSE ROQUE DA - IF
- Unidade: IF
- Subjects: ESTRUTURA ELETRÔNICA; TERMODINÂMICA
- Language: Inglês
- Imprenta:
-
ABNT
SCOPEL, W. L. e FAZZIO, Adalberto e SILVA, Antonio Jose Roque da. 'HF' defects in 'HF''O' IND. 2'/'SI'. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/pdf/cond-mat/0608677.pdf. Acesso em: 29 dez. 2025. , 2020 -
APA
Scopel, W. L., Fazzio, A., & Silva, A. J. R. da. (2020). 'HF' defects in 'HF''O' IND. 2'/'SI'. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/pdf/cond-mat/0608677.pdf -
NLM
Scopel WL, Fazzio A, Silva AJR da. 'HF' defects in 'HF''O' IND. 2'/'SI' [Internet]. 2020 ;[citado 2025 dez. 29 ] Available from: https://arxiv.org/pdf/cond-mat/0608677.pdf -
Vancouver
Scopel WL, Fazzio A, Silva AJR da. 'HF' defects in 'HF''O' IND. 2'/'SI' [Internet]. 2020 ;[citado 2025 dez. 29 ] Available from: https://arxiv.org/pdf/cond-mat/0608677.pdf - A tight-binding model for the band dispersion in rhombohedral topological insulators over the whole brilluoin zone
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- Stability investigation and thermal behavior of a hypothetical silicon nanotube
- Influence of surface degrees of freedom on the adsorption of Ge ad-atoms on Si(100)
- Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'
- Computer simulations of gold nanowires
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