Hybrid reciprocal lattice: application to layer stress appointment in 'GA''AL''N'/'GA''N'(0001) systems with patterned substrates (2016)
- Authors:
- Autor USP: MORELHAO, SERGIO LUIZ - IF
- Unidade: IF
- Subjects: SEMICONDUTORES; RAIOS X
- Language: Inglês
- Imprenta:
-
ABNT
DOMAGALA, Jaroslaw Z. et al. Hybrid reciprocal lattice: application to layer stress appointment in 'GA''AL''N'/'GA''N'(0001) systems with patterned substrates. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/ftp/arxiv/papers/1603/1603.00793.pdf. Acesso em: 23 jan. 2026. , 2016 -
APA
Domagala, J. Z., Sarzyński, M., Maździarz, M., Dlużewski, P., Leszczyński, M., & Morelhão, S. L. (2016). Hybrid reciprocal lattice: application to layer stress appointment in 'GA''AL''N'/'GA''N'(0001) systems with patterned substrates. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/ftp/arxiv/papers/1603/1603.00793.pdf -
NLM
Domagala JZ, Sarzyński M, Maździarz M, Dlużewski P, Leszczyński M, Morelhão SL. Hybrid reciprocal lattice: application to layer stress appointment in 'GA''AL''N'/'GA''N'(0001) systems with patterned substrates [Internet]. 2016 ;[citado 2026 jan. 23 ] Available from: https://arxiv.org/ftp/arxiv/papers/1603/1603.00793.pdf -
Vancouver
Domagala JZ, Sarzyński M, Maździarz M, Dlużewski P, Leszczyński M, Morelhão SL. Hybrid reciprocal lattice: application to layer stress appointment in 'GA''AL''N'/'GA''N'(0001) systems with patterned substrates [Internet]. 2016 ;[citado 2026 jan. 23 ] Available from: https://arxiv.org/ftp/arxiv/papers/1603/1603.00793.pdf - Incorporation of Europium in Bi2Te3 Topological Insulator Epitaxial Films
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