Modeling noise in superlattice quantum-well infrared photodetectors (2014)
- Authors:
- USP affiliated authors: SILVA, EUZI CONCEICAO FERNANDES DA - IF ; QUIVY, ALAIN ANDRE - IF
- Unidade: IF
- DOI: 10.1088/0022-3727/47/38/385105
- Subjects: FOTODETECTORES; CAMPO ELETROMAGNÉTICO
- Language: Inglês
- Imprenta:
- Source:
- Título: JOURNAL OF PHYSICS D: APPLIED PHYSICS
- Volume/Número/Paginação/Ano: v. 47, n. 38, p. 385105, set. 2014
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
FERNANDES, Fernando Massa et al. Modeling noise in superlattice quantum-well infrared photodetectors. JOURNAL OF PHYSICS D: APPLIED PHYSICS, v. 47, n. 38, p. 385105, 2014Tradução . . Disponível em: https://doi.org/10.1088/0022-3727/47/38/385105. Acesso em: 10 jan. 2026. -
APA
Fernandes, F. M., Claro, M. S., Silva, E. C. F. da, & Quivy, A. A. (2014). Modeling noise in superlattice quantum-well infrared photodetectors. JOURNAL OF PHYSICS D: APPLIED PHYSICS, 47( 38), 385105. doi:10.1088/0022-3727/47/38/385105 -
NLM
Fernandes FM, Claro MS, Silva ECF da, Quivy AA. Modeling noise in superlattice quantum-well infrared photodetectors [Internet]. JOURNAL OF PHYSICS D: APPLIED PHYSICS. 2014 ; 47( 38): 385105.[citado 2026 jan. 10 ] Available from: https://doi.org/10.1088/0022-3727/47/38/385105 -
Vancouver
Fernandes FM, Claro MS, Silva ECF da, Quivy AA. Modeling noise in superlattice quantum-well infrared photodetectors [Internet]. JOURNAL OF PHYSICS D: APPLIED PHYSICS. 2014 ; 47( 38): 385105.[citado 2026 jan. 10 ] Available from: https://doi.org/10.1088/0022-3727/47/38/385105 - Effects of confinement on the electron-phonon interaction in 'AL'IND. 0,18' 'GA'IND. 0,82''AS'/'GA''AS' quantum wells
- High density InAlAs and InAs/InAlAs quantum dots for infrared photodetectors
- High-efficiency infrared photodetectors based on quantum wells grown by molecular-beam epitaxy
- Energy levels for lens-shaped self-assembled quantum dots heterostructures
- Estudo dos modelos de ajuste da variaão do "gap" com a temperatura em GaAs "bulk"
- The quantum mobility of a two-dimensional electron gas in selectively doped GaAs/InGaAs quantum wells with embedded quantum dots
- Estudos magnetico-oticos das transicoes excitonicas de pocos quanticos de 'GA''AS' / 'GAALAS' com modulacao de dopagem tipo n
- Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces
- In-segregation measurements by RHEED during growth: comparison between vicinal and nominal substrat
- Calculation of the electron energy levels of InAs/GaAs quantum dots for application in infrared photodetectors
Informações sobre o DOI: 10.1088/0022-3727/47/38/385105 (Fonte: oaDOI API)
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