IxV curves of boron and nitrogen doping zigzag graphene nanoribbons: AB INITIO ELECTRONIC TRANSPORT CALCULATIONS (2010)
- Authors:
- USP affiliated authors: SILVA, ANTONIO JOSE ROQUE DA - IF ; FAZZIO, ADALBERTO - IF
- Unidade: IF
- Assunto: ESTRUTURA ELETRÔNICA
- Language: Inglês
- Imprenta:
- Source:
- Título: Resumo
- Conference titles: Escola Brasileira de Estrutura Eletrônica
-
ABNT
PONTES, Renato Borges et al. IxV curves of boron and nitrogen doping zigzag graphene nanoribbons: AB INITIO ELECTRONIC TRANSPORT CALCULATIONS. 2010, Anais.. São Paulo: SBF, 2010. Disponível em: http://www.ebee-2010.ufabc.edu.br/programacao.html. Acesso em: 26 dez. 2025. -
APA
Pontes, R. B., Padilha, J. E., Silva, A. J. R. da, & Fazzio, A. (2010). IxV curves of boron and nitrogen doping zigzag graphene nanoribbons: AB INITIO ELECTRONIC TRANSPORT CALCULATIONS. In Resumo. São Paulo: SBF. Recuperado de http://www.ebee-2010.ufabc.edu.br/programacao.html -
NLM
Pontes RB, Padilha JE, Silva AJR da, Fazzio A. IxV curves of boron and nitrogen doping zigzag graphene nanoribbons: AB INITIO ELECTRONIC TRANSPORT CALCULATIONS [Internet]. Resumo. 2010 ;[citado 2025 dez. 26 ] Available from: http://www.ebee-2010.ufabc.edu.br/programacao.html -
Vancouver
Pontes RB, Padilha JE, Silva AJR da, Fazzio A. IxV curves of boron and nitrogen doping zigzag graphene nanoribbons: AB INITIO ELECTRONIC TRANSPORT CALCULATIONS [Internet]. Resumo. 2010 ;[citado 2025 dez. 26 ] Available from: http://www.ebee-2010.ufabc.edu.br/programacao.html - 'HF' defects in 'HF''O' IND. 2'/'SI'
- A tight-binding model for the band dispersion in rhombohedral topological insulators over the whole brilluoin zone
- Bundling up carbon nanotubes through Wigner defects
- Heme B-like defects in N-doped carbon nanotubes
- Electric field induces doping in graphene bilayers on hexagonal boron nitride substrates
- Self-interstitial defect in germanium
- Ab initio calculations for a hypothetical material: silicon nanotubes
- Stability investigation and thermal behavior of a hypothetical silicon nanotube
- Influence of surface degrees of freedom on the adsorption of Ge ad-atoms on Si(100)
- Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
