Theory of near-gap second harmonic generation in centrosymmetric magnetic semiconductors: Europium chalcogenides (2009)
- Authors:
- Autor USP: HENRIQUES, ANDRE BOHOMOLETZ - IF
- Unidade: IF
- DOI: 10.1103/physrevb.80.245206
- Assunto: SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Publisher place: Colledge Park
- Date published: 2009
- Source:
- Título: Physical Review B
- ISSN: 1098-0121
- Volume/Número/Paginação/Ano: v. 80, n. 24, p. 245206/1-245206/8, 2009
- Este periódico é de assinatura
- Este artigo é de acesso aberto
- URL de acesso aberto
- Cor do Acesso Aberto: green
-
ABNT
HENRIQUES, André Bohomoletz e ABRAMOF, E. Theory of near-gap second harmonic generation in centrosymmetric magnetic semiconductors: Europium chalcogenides. Physical Review B, v. 80, n. 24, p. 245206/1-245206/8, 2009Tradução . . Disponível em: https://doi.org/10.1103/physrevb.80.245206. Acesso em: 06 nov. 2024. -
APA
Henriques, A. B., & Abramof, E. (2009). Theory of near-gap second harmonic generation in centrosymmetric magnetic semiconductors: Europium chalcogenides. Physical Review B, 80( 24), 245206/1-245206/8. doi:10.1103/physrevb.80.245206 -
NLM
Henriques AB, Abramof E. Theory of near-gap second harmonic generation in centrosymmetric magnetic semiconductors: Europium chalcogenides [Internet]. Physical Review B. 2009 ; 80( 24): 245206/1-245206/8.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1103/physrevb.80.245206 -
Vancouver
Henriques AB, Abramof E. Theory of near-gap second harmonic generation in centrosymmetric magnetic semiconductors: Europium chalcogenides [Internet]. Physical Review B. 2009 ; 80( 24): 245206/1-245206/8.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1103/physrevb.80.245206 - Theoretical investigation of the photoluminescence and fermi surface of periodically delta-dopped 'GA''AS'
- Magneto-optical studies of screened excitons in 'GA''AS' / 'AL IND.X' 'GA IND.1-X''AS' modulation doped quantum wells
- Analise espectral de processos magneto-oscilatorios
- Quantum and transport mobilities in 'DELTA'-doped semiconductors
- Magnetic quantum effects in degenerate superlattices
- High magnetic field transport and photoluminescence in doped InGaAs/InP superlattices
- Optical investigation of magnetic phases in epitaxial 'EU''SE'
- Pseudomorphic InxGal -xAs/InO.52Al0.48As modulation doped heterostructures grown by LP-MOVPE
- Carbon delta-doped AlGaAs grown by metalorganic vapor phase epitaxy
- InP/InGaAs doped quantum barrier systems
Informações sobre o DOI: 10.1103/physrevb.80.245206 (Fonte: oaDOI API)
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