InP/InGaAs doped quantum barrier systems (2000)
- Authors:
- Autor USP: HENRIQUES, ANDRE BOHOMOLETZ - IF
- Unidade: IF
- Subjects: MATÉRIA CONDENSADA; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Source:
- Título: Resumos
- Conference titles: Encontro Nacional de Física da Matéria Condensada
-
ABNT
FARIAS, C. M. A. et al. InP/InGaAs doped quantum barrier systems. 2000, Anais.. São Paulo: SBF, 2000. . Acesso em: 26 dez. 2025. -
APA
Farias, C. M. A., Henriques, A. B., Souza, P. L., & Yavich, B. (2000). InP/InGaAs doped quantum barrier systems. In Resumos. São Paulo: SBF. -
NLM
Farias CMA, Henriques AB, Souza PL, Yavich B. InP/InGaAs doped quantum barrier systems. Resumos. 2000 ;[citado 2025 dez. 26 ] -
Vancouver
Farias CMA, Henriques AB, Souza PL, Yavich B. InP/InGaAs doped quantum barrier systems. Resumos. 2000 ;[citado 2025 dez. 26 ] - High magnetic field transport and photoluminescence in doped InGaAs/InP superlattices
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- Magnetic quantum effects in degenerate superlattices
- Monte Carlo simulations of magnetic polaron’s energy linewidth in EuTe Crystals
- Magneto-optical studies of screened excitons in 'GA''AS' / 'AL IND.X' 'GA IND.1-X''AS' modulation doped quantum wells
- Analise espectral de processos magneto-oscilatorios
- Carbon delta-doped AlGaAs grown by metalorganic vapor phase epitaxy
- Theoretical investigation of the photoluminescence and fermi surface of periodically delta-dopped 'GA''AS'
- Optical investigation of magnetic phases in epitaxial 'EU''SE'
- Quantum and transport mobilities in 'DELTA'-doped semiconductors
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