Monte Carlo simulations of magnetic polaron’s energy linewidth in EuTe Crystals (2015)
- Authors:
- Autor USP: HENRIQUES, ANDRE BOHOMOLETZ - IF
- Unidade: IF
- Subjects: FÍSICA DA MATÉRIA CONDENSADA; SIMULAÇÃO (ESTATÍSTICA); MÉTODO DE MONTE CARLO
- Language: Inglês
- Imprenta:
- Source:
- Título: Resumo
- Conference titles: Encontro Nacional de Física da Matéria Condensada
-
ABNT
MORAES, Flávio Campopiano Dias de e HENRIQUES, André Bohomoletz. Monte Carlo simulations of magnetic polaron’s energy linewidth in EuTe Crystals. 2015, Anais.. São Paulo: SBF, 2015. Disponível em: http://www1.sbfisica.org.br/eventos/enfmc/xxxviii/sys/resumos/R1144-1.pdf. Acesso em: 27 dez. 2025. -
APA
Moraes, F. C. D. de, & Henriques, A. B. (2015). Monte Carlo simulations of magnetic polaron’s energy linewidth in EuTe Crystals. In Resumo. São Paulo: SBF. Recuperado de http://www1.sbfisica.org.br/eventos/enfmc/xxxviii/sys/resumos/R1144-1.pdf -
NLM
Moraes FCD de, Henriques AB. Monte Carlo simulations of magnetic polaron’s energy linewidth in EuTe Crystals [Internet]. Resumo. 2015 ;[citado 2025 dez. 27 ] Available from: http://www1.sbfisica.org.br/eventos/enfmc/xxxviii/sys/resumos/R1144-1.pdf -
Vancouver
Moraes FCD de, Henriques AB. Monte Carlo simulations of magnetic polaron’s energy linewidth in EuTe Crystals [Internet]. Resumo. 2015 ;[citado 2025 dez. 27 ] Available from: http://www1.sbfisica.org.br/eventos/enfmc/xxxviii/sys/resumos/R1144-1.pdf - Density and graviton pertubations in the cosmic microwave background
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- Characterization of delta-doped superlattices by shubnikov-de haas measurements
- Band-edge polarized optical absorption in europium chalcogenides
- Obervation of densely populated Tamm states in modulation-doped superlattices
- Magneto-photoluminescence of Tamm states in 'InP/In.IND.0.53' 'Ga IND.0.47' As superlattices
- Strong luminescence from Tamm states in modulation-doped superlattices
- Magneto-optical studies of 'Pb IND.1-X' 'Eu IND.X' Te
- Níveis de Landau e fotoluminescência de super-redes 'In IND.0,53' 'Ga IND.0,47'As/InP tipo-n
- Influence of the interface layers on the transport properties of InP/InGaAs quantum barrier structures grow low pressure metalorganic vapor phase epitaxy
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