Influence of the interface layers on the transport properties of InP/InGaAs quantum barrier structures grow low pressure metalorganic vapor phase epitaxy (2003)
- Authors:
- Autor USP: HENRIQUES, ANDRE BOHOMOLETZ - IF
- Unidade: IF
- DOI: 10.1063/1.1566477
- Subjects: ESTRUTURA ELETRÔNICA; DIFRAÇÃO POR RAIOS X
- Language: Inglês
- Imprenta:
- Source:
- Título: Journal of Applied Physics
- ISSN: 0021-8979
- Volume/Número/Paginação/Ano: v. 93, n. 9, p. 5460-5464, 2003
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
HANAMOTO, L K et al. Influence of the interface layers on the transport properties of InP/InGaAs quantum barrier structures grow low pressure metalorganic vapor phase epitaxy. Journal of Applied Physics, v. 93, n. 9, p. 5460-5464, 2003Tradução . . Disponível em: https://doi.org/10.1063/1.1566477. Acesso em: 27 dez. 2025. -
APA
Hanamoto, L. K., Farias, C. M. A., Henriques, A. B., Tribuzy, C. V. B., Saouza, P. L., & Yavich, B. (2003). Influence of the interface layers on the transport properties of InP/InGaAs quantum barrier structures grow low pressure metalorganic vapor phase epitaxy. Journal of Applied Physics, 93( 9), 5460-5464. doi:10.1063/1.1566477 -
NLM
Hanamoto LK, Farias CMA, Henriques AB, Tribuzy CVB, Saouza PL, Yavich B. Influence of the interface layers on the transport properties of InP/InGaAs quantum barrier structures grow low pressure metalorganic vapor phase epitaxy [Internet]. Journal of Applied Physics. 2003 ; 93( 9): 5460-5464.[citado 2025 dez. 27 ] Available from: https://doi.org/10.1063/1.1566477 -
Vancouver
Hanamoto LK, Farias CMA, Henriques AB, Tribuzy CVB, Saouza PL, Yavich B. Influence of the interface layers on the transport properties of InP/InGaAs quantum barrier structures grow low pressure metalorganic vapor phase epitaxy [Internet]. Journal of Applied Physics. 2003 ; 93( 9): 5460-5464.[citado 2025 dez. 27 ] Available from: https://doi.org/10.1063/1.1566477 - Density and graviton pertubations in the cosmic microwave background
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- Magneto-optical studies of 'Pb IND.1-X' 'Eu IND.X' Te
- Níveis de Landau e fotoluminescência de super-redes 'In IND.0,53' 'Ga IND.0,47'As/InP tipo-n
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Informações sobre o DOI: 10.1063/1.1566477 (Fonte: oaDOI API)
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