Influence of the interface layers on the transport properties of InP/InGaAs quantum barrier structures grow low pressure metalorganic vapor phase epitaxy (2003)
- Autores:
- Autor USP: HENRIQUES, ANDRE BOHOMOLETZ - IF
- Unidade: IF
- DOI: 10.1063/1.1566477
- Assuntos: ESTRUTURA ELETRÔNICA; DIFRAÇÃO POR RAIOS X
- Idioma: Inglês
- Imprenta:
- Fonte:
- Título do periódico: Journal of Applied Physics
- ISSN: 0021-8979
- Volume/Número/Paginação/Ano: v. 93, n. 9, p. 5460-5464, 2003
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
HANAMOTO, L K et al. Influence of the interface layers on the transport properties of InP/InGaAs quantum barrier structures grow low pressure metalorganic vapor phase epitaxy. Journal of Applied Physics, v. 93, n. 9, p. 5460-5464, 2003Tradução . . Disponível em: https://doi.org/10.1063/1.1566477. Acesso em: 26 set. 2024. -
APA
Hanamoto, L. K., Farias, C. M. A., Henriques, A. B., Tribuzy, C. V. B., Saouza, P. L., & Yavich, B. (2003). Influence of the interface layers on the transport properties of InP/InGaAs quantum barrier structures grow low pressure metalorganic vapor phase epitaxy. Journal of Applied Physics, 93( 9), 5460-5464. doi:10.1063/1.1566477 -
NLM
Hanamoto LK, Farias CMA, Henriques AB, Tribuzy CVB, Saouza PL, Yavich B. Influence of the interface layers on the transport properties of InP/InGaAs quantum barrier structures grow low pressure metalorganic vapor phase epitaxy [Internet]. Journal of Applied Physics. 2003 ; 93( 9): 5460-5464.[citado 2024 set. 26 ] Available from: https://doi.org/10.1063/1.1566477 -
Vancouver
Hanamoto LK, Farias CMA, Henriques AB, Tribuzy CVB, Saouza PL, Yavich B. Influence of the interface layers on the transport properties of InP/InGaAs quantum barrier structures grow low pressure metalorganic vapor phase epitaxy [Internet]. Journal of Applied Physics. 2003 ; 93( 9): 5460-5464.[citado 2024 set. 26 ] Available from: https://doi.org/10.1063/1.1566477 - Theoretical investigation of the photoluminescence and fermi surface of periodically delta-dopped 'GA''AS'
- Magneto-optical studies of screened excitons in 'GA''AS' / 'AL IND.X' 'GA IND.1-X''AS' modulation doped quantum wells
- Analise espectral de processos magneto-oscilatorios
- Quantum and transport mobilities in 'DELTA'-doped semiconductors
- Magnetic quantum effects in degenerate superlattices
- High magnetic field transport and photoluminescence in doped InGaAs/InP superlattices
- Optical investigation of magnetic phases in epitaxial 'EU''SE'
- Pseudomorphic InxGal -xAs/InO.52Al0.48As modulation doped heterostructures grown by LP-MOVPE
- Carbon delta-doped AlGaAs grown by metalorganic vapor phase epitaxy
- InP/InGaAs doped quantum barrier systems
Informações sobre o DOI: 10.1063/1.1566477 (Fonte: oaDOI API)
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