Optical properties in `In IND.0.2´`Ga IND.0.8´ As=GaAs superlattices grown on (001) GaAs substrates (2009)
- Authors:
- Autor USP: QUIVY, ALAIN ANDRE - IF
- Unidade: IF
- Subjects: FÍSICA DA MATÉRIA CONDENSADA; POÇOS QUÂNTICOS
- Language: Inglês
- Imprenta:
- Source:
- Título: Poster Session
- Conference titles: Encontro Nacional de Física da Matéria Condensada
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ABNT
AMARAL, Anderson Monteiro e SILVA, Sebastião William da e QUIVY, Alain André. Optical properties in `In IND.0.2´`Ga IND.0.8´ As=GaAs superlattices grown on (001) GaAs substrates. 2009, Anais.. São Paulo: SBF, 2009. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxii/sys/resumos/R1109-1.pdf. Acesso em: 21 jan. 2026. -
APA
Amaral, A. M., Silva, S. W. da, & Quivy, A. A. (2009). Optical properties in `In IND.0.2´`Ga IND.0.8´ As=GaAs superlattices grown on (001) GaAs substrates. In Poster Session. São Paulo: SBF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxii/sys/resumos/R1109-1.pdf -
NLM
Amaral AM, Silva SW da, Quivy AA. Optical properties in `In IND.0.2´`Ga IND.0.8´ As=GaAs superlattices grown on (001) GaAs substrates [Internet]. Poster Session. 2009 ;[citado 2026 jan. 21 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxii/sys/resumos/R1109-1.pdf -
Vancouver
Amaral AM, Silva SW da, Quivy AA. Optical properties in `In IND.0.2´`Ga IND.0.8´ As=GaAs superlattices grown on (001) GaAs substrates [Internet]. Poster Session. 2009 ;[citado 2026 jan. 21 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxii/sys/resumos/R1109-1.pdf - Theoretical and experimental study of the excitonic binding energy in 'GA''AS'/'AL''GA''AS' single and coupled double quantum wells
- Interplay between direct gap renormalization and intervalley scattering in 'Al IND.X' 'Ga IND.1-X'As near the 'gama'-X crossover
- On the morphology of films grown by droplet-assisted molecular beam epitaxy
- Effect of electric field non-uniformity on the differences between I-V characteristics of QWIP devices fabricated on the same wafer
- Gain and recombination dynamics of quantum-dot infrared photodetectors
- Effect of dopant segregation and negative differential mobility on multi-quantum well activation energy
- New method for studying semiconducting surfaces in air by scanning tunneling microscopy
- p-type doping of GaAs(001) layers grown by droplet-assisted MBE using silicon as a dopant
- Microscopio de tonelamento operando no ar
- Medidas de efeito hall para determinacao da concentracao de portadores em amostras dopadas por mbe
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