Theoretical and experimental determination of the excitonic binding energy in AlGaAs/GaAs single and coupled double quantum wells (2008)
- Authors:
- Autor USP: QUIVY, ALAIN ANDRE - IF
- Unidade: IF
- Subjects: FÍSICA DA MATÉRIA CONDENSADA; SEMICONDUTORES; POÇOS QUÂNTICOS
- Language: Inglês
- Imprenta:
- Source:
- Título: Resumo
- Conference titles: Encontro Nacional de Física da Matéria Condensada
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ABNT
CESAR, Daniel Ferreira et al. Theoretical and experimental determination of the excitonic binding energy in AlGaAs/GaAs single and coupled double quantum wells. 2008, Anais.. São Paulo: SBF, 2008. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxi/sys/resumos/R0707-1.pdf. Acesso em: 05 mar. 2026. -
APA
Cesar, D. F., Lopes, È. M., Duarte, J. L., Dias, I. F. L., Franchello, F., Laureto, E., et al. (2008). Theoretical and experimental determination of the excitonic binding energy in AlGaAs/GaAs single and coupled double quantum wells. In Resumo. São Paulo: SBF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxi/sys/resumos/R0707-1.pdf -
NLM
Cesar DF, Lopes ÈM, Duarte JL, Dias IFL, Franchello F, Laureto E, Guimarães PSS, Quivy AA. Theoretical and experimental determination of the excitonic binding energy in AlGaAs/GaAs single and coupled double quantum wells [Internet]. Resumo. 2008 ;[citado 2026 mar. 05 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxi/sys/resumos/R0707-1.pdf -
Vancouver
Cesar DF, Lopes ÈM, Duarte JL, Dias IFL, Franchello F, Laureto E, Guimarães PSS, Quivy AA. Theoretical and experimental determination of the excitonic binding energy in AlGaAs/GaAs single and coupled double quantum wells [Internet]. Resumo. 2008 ;[citado 2026 mar. 05 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxi/sys/resumos/R0707-1.pdf - Calculation of two-dimensional scattering patterns for oriented systems
- Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3
- Investigation of the electron-phonon interaction in GaAs/`Al IND.x´`Ga IND.1-x´As coupled double quantum wells
- Photoluminescence in self assembled quantum dos of InAs grown with different deposition rates
- Behavior of excitonic binding energy in single and double 'GA''AS'/'AL''GA''AS' quantum wells
- Growth and characterization of 'IN' 'GA''AS' quantum dots by molecular beam epitaxy
- Effect of barrier composition fluctuation on luminescence properties of AlGaAs/GaAs single quantum wells
- Influência da composição da barreira sobre a fotoluminescência dependente da temperatura em poços quânticos de $Al_xGa_{1-x}As/GaAs$
- Interdot carrier transfer in self-assembled 'IN''AS'/'GA''AS' double-quantum-dots structures
- Preparation of atomically flat GaAs surfaces for molecular beam epitaxy
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