Behavior of excitonic transitions in AlGaAs/GaAs coupled double quantum wells as a function of temperature and excitation power (2007)
- Authors:
- Autor USP: QUIVY, ALAIN ANDRE - IF
- Unidade: IF
- Subjects: SEMICONDUTORES; POÇOS QUÂNTICOS
- Language: Inglês
- Imprenta:
- Conference titles: Encontro Nacional de Física da Matéria Condensada
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ABNT
LOPES, E M et al. Behavior of excitonic transitions in AlGaAs/GaAs coupled double quantum wells as a function of temperature and excitation power. 2007, Anais.. São Paulo: SBF, 2007. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxx/sys/resumos/R0183-1.pdf. Acesso em: 24 fev. 2026. -
APA
Lopes, E. M., Duarte, J. L., Dias, I. F. L., Poças, L. C., Laureto, E., Cesar, D. F., et al. (2007). Behavior of excitonic transitions in AlGaAs/GaAs coupled double quantum wells as a function of temperature and excitation power. In . São Paulo: SBF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxx/sys/resumos/R0183-1.pdf -
NLM
Lopes EM, Duarte JL, Dias IFL, Poças LC, Laureto E, Cesar DF, Lamas TE, Quivy AA. Behavior of excitonic transitions in AlGaAs/GaAs coupled double quantum wells as a function of temperature and excitation power [Internet]. 2007 ;[citado 2026 fev. 24 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxx/sys/resumos/R0183-1.pdf -
Vancouver
Lopes EM, Duarte JL, Dias IFL, Poças LC, Laureto E, Cesar DF, Lamas TE, Quivy AA. Behavior of excitonic transitions in AlGaAs/GaAs coupled double quantum wells as a function of temperature and excitation power [Internet]. 2007 ;[citado 2026 fev. 24 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxx/sys/resumos/R0183-1.pdf - Calculation of two-dimensional scattering patterns for oriented systems
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- Investigation of the electron-phonon interaction in GaAs/`Al IND.x´`Ga IND.1-x´As coupled double quantum wells
- Photoluminescence in self assembled quantum dos of InAs grown with different deposition rates
- Behavior of excitonic binding energy in single and double 'GA''AS'/'AL''GA''AS' quantum wells
- Growth and characterization of 'IN' 'GA''AS' quantum dots by molecular beam epitaxy
- Effect of barrier composition fluctuation on luminescence properties of AlGaAs/GaAs single quantum wells
- Influência da composição da barreira sobre a fotoluminescência dependente da temperatura em poços quânticos de $Al_xGa_{1-x}As/GaAs$
- Interdot carrier transfer in self-assembled 'IN''AS'/'GA''AS' double-quantum-dots structures
- Preparation of atomically flat GaAs surfaces for molecular beam epitaxy
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