Transmission electron microscopy study of InAs and InGaAs quantum dots grown by MBE (1998)
- Authors:
- USP affiliated authors: MAREGA JUNIOR, EUCLYDES - IFSC ; BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Subjects: MATÉRIA CONDENSADA; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Publisher: Sociedade Brasileira de Física
- Publisher place: São Paulo
- Date published: 1998
- Source:
- Título: Resumos
- Conference titles: Encontro Nacional de Física da Matéria Condensada
-
ABNT
PETITPREZ, Emmanuel et al. Transmission electron microscopy study of InAs and InGaAs quantum dots grown by MBE. 1998, Anais.. São Paulo: Sociedade Brasileira de Física, 1998. . Acesso em: 27 jan. 2026. -
APA
Petitprez, E., González-Borrero, P. P., Marega Junior, E., Basmaji, P., Mazel, A., Dorignac, D., & Fourmeaux, R. (1998). Transmission electron microscopy study of InAs and InGaAs quantum dots grown by MBE. In Resumos. São Paulo: Sociedade Brasileira de Física. -
NLM
Petitprez E, González-Borrero PP, Marega Junior E, Basmaji P, Mazel A, Dorignac D, Fourmeaux R. Transmission electron microscopy study of InAs and InGaAs quantum dots grown by MBE. Resumos. 1998 ;[citado 2026 jan. 27 ] -
Vancouver
Petitprez E, González-Borrero PP, Marega Junior E, Basmaji P, Mazel A, Dorignac D, Fourmeaux R. Transmission electron microscopy study of InAs and InGaAs quantum dots grown by MBE. Resumos. 1998 ;[citado 2026 jan. 27 ] - Propriedades oticas de super-redes de ('GA''AS') / ('AL''AS') crescidas nas direcoes (100) e (n11) a e b com n =1,2,3,5,7
- Photocurrent properties of 'DELTA-'si'' doped 'IN''GA''AS' multi-quantum well heterostructure
- Exciton localization and temperature stability in self-organized 'IN''AS' quantum dots
- Self-organized 'IN''GA''AS' quantum dots grown by molecular beam epitaxy on (100), (711)a / b, (511)a / b, (311)a / b, (211)a / b, and (111)a / b oriented 'GA''AS'
- Optical properties of self-assembled 'IN''AS' quantum dots on high-index 'GA''AS' substrates
- Determinacao da polaridade e preparacao quimica das superficies de 'GA''AS' (311) a e b antes do crescimento por mbe
- Vertically aligned self-assembled 'IN''GA''AS' quantum dots layers on (311) a / b and (100) 'GA''AS' substrates
- Optical properties of vertically stacked InAs island layers grown on (311)A/B and (001) GaAs substrates
- Caracterização de nanoestruturas semicondutoras através de Técnica de Microscopia por Força Atômica (AFM)
- Optical properties of vertically aligned self-assembled 'IN''GA''AS' quantum dots layers on (311)a / b and (100) 'GA''AS' substrates
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