Charge transfer between percolation levels in a system with an artificial , strongly disordered potential (1994)
- Authors:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Subjects: MATÉRIA CONDENSADA; MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS)
- Language: Inglês
- Imprenta:
- Source:
- Título: Program and Abstracts
- Conference titles: International Conference on Superlattices Microstructures and Microdevices - ICSMM
-
ABNT
GUSEV, G M et al. Charge transfer between percolation levels in a system with an artificial , strongly disordered potential. 1994, Anais.. Alberta: Instituto de Física de São Carlos, Universidade de São Paulo, 1994. . Acesso em: 17 nov. 2025. -
APA
Gusev, G. M., Gennser, U., Maude, D. K., Portal, J. C., Lubyshev, D. I., Nastaushev, Y. V., et al. (1994). Charge transfer between percolation levels in a system with an artificial , strongly disordered potential. In Program and Abstracts. Alberta: Instituto de Física de São Carlos, Universidade de São Paulo. -
NLM
Gusev GM, Gennser U, Maude DK, Portal JC, Lubyshev DI, Nastaushev YV, Rossi JC, Basmaji P. Charge transfer between percolation levels in a system with an artificial , strongly disordered potential. Program and Abstracts. 1994 ;[citado 2025 nov. 17 ] -
Vancouver
Gusev GM, Gennser U, Maude DK, Portal JC, Lubyshev DI, Nastaushev YV, Rossi JC, Basmaji P. Charge transfer between percolation levels in a system with an artificial , strongly disordered potential. Program and Abstracts. 1994 ;[citado 2025 nov. 17 ] - Propriedades óticas, estruturais e elétricas de camadas múltiplas de pontos quânticos naturais de InAs crescidos sobre substrato de GaAs
- Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy
- Transition of aharonov-bohm oscillations from hc / e to hc/2e periodicity induced by magnetic field in the array of rings with small diameter
- Nano-scale wires of 'GA''AS ON POROUS 'si' grown by molecular beam epitaxy
- Electrical properties of dx centers in heavily 'SE'-doped 'AL IND.X''GA IND.1-X''AS'
- Negative magnetoresistance in coupled quantum wells
- Growth mode transition observation on temperature dependence of rheed oscillation
- Capacitance measurement of resonant dx centers in heavily 'SE'-doped 'AL IND.X''GA IND.1-X''AS'
- Raman scattering study of 'GA''AS' grown on porous 'SI' by molecular beam epitaxy
- Charge transfer between percolation levels in a system with an artificial, strongly disordered potential
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
