Raman scattering study of 'GA''AS' grown on porous 'SI' by molecular beam epitaxy (1994)
- Authors:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Subjects: MATÉRIA CONDENSADA; MATÉRIA CONDENSADA; MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Brazilian Journal of Physics
- Volume/Número/Paginação/Ano: v.24, n.1 , p.337-9, mar. 1994
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ABNT
GALZERANI, J C et al. Raman scattering study of 'GA''AS' grown on porous 'SI' by molecular beam epitaxy. Brazilian Journal of Physics, v. 24, n. 1 , p. 337-9, 1994Tradução . . Acesso em: 12 mar. 2026. -
APA
Galzerani, J. C., Pizani, P. S., Rossi, J. C., Silva, S. W., Lubyshev, D. I., & Basmaji, P. (1994). Raman scattering study of 'GA''AS' grown on porous 'SI' by molecular beam epitaxy. Brazilian Journal of Physics, 24( 1 ), 337-9. -
NLM
Galzerani JC, Pizani PS, Rossi JC, Silva SW, Lubyshev DI, Basmaji P. Raman scattering study of 'GA''AS' grown on porous 'SI' by molecular beam epitaxy. Brazilian Journal of Physics. 1994 ;24( 1 ): 337-9.[citado 2026 mar. 12 ] -
Vancouver
Galzerani JC, Pizani PS, Rossi JC, Silva SW, Lubyshev DI, Basmaji P. Raman scattering study of 'GA''AS' grown on porous 'SI' by molecular beam epitaxy. Brazilian Journal of Physics. 1994 ;24( 1 ): 337-9.[citado 2026 mar. 12 ] - Origem da luminescencia visivel do silicio poroso
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- Kinetic modelling of segregation during the molecular beam epitaxy of GaAs/AlAs heterostructures
- Raman study of interface modes subjected to strain in InAs/GaAs self-assembled quantum dots
- Influence of crystal-potential fluctuations on Raman spectra of coupled plasmon-Lo-phonon modes in disordered systems
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