Magnetic field tuned transition of aharonov-bohm oscillations from hc / e to hc/2e periodicity in the array of 'AL''GA''AS' / 'GA''AS' rings (1994)
- Authors:
- Autor USP: BASMAJI, PIERRE - IFQSC
- Unidade: IFQSC
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Brazilian Journal of Physics
- Volume/Número/Paginação/Ano: v.24, n.1 , p.297-301, mar. 1994
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ABNT
GUSEV, Guennadii Michailovich et al. Magnetic field tuned transition of aharonov-bohm oscillations from hc / e to hc/2e periodicity in the array of 'AL''GA''AS' / 'GA''AS' rings. Brazilian Journal of Physics, v. 24, n. 1 , p. 297-301, 1994Tradução . . Acesso em: 16 dez. 2025. -
APA
Gusev, G. M., Basmaji, P., Lubyshev, D. I., Portal, J. C., Litvin, L. V., Nastaushev, Y. V., & Toropov, A. I. (1994). Magnetic field tuned transition of aharonov-bohm oscillations from hc / e to hc/2e periodicity in the array of 'AL''GA''AS' / 'GA''AS' rings. Brazilian Journal of Physics, 24( 1 ), 297-301. -
NLM
Gusev GM, Basmaji P, Lubyshev DI, Portal JC, Litvin LV, Nastaushev YV, Toropov AI. Magnetic field tuned transition of aharonov-bohm oscillations from hc / e to hc/2e periodicity in the array of 'AL''GA''AS' / 'GA''AS' rings. Brazilian Journal of Physics. 1994 ;24( 1 ): 297-301.[citado 2025 dez. 16 ] -
Vancouver
Gusev GM, Basmaji P, Lubyshev DI, Portal JC, Litvin LV, Nastaushev YV, Toropov AI. Magnetic field tuned transition of aharonov-bohm oscillations from hc / e to hc/2e periodicity in the array of 'AL''GA''AS' / 'GA''AS' rings. Brazilian Journal of Physics. 1994 ;24( 1 ): 297-301.[citado 2025 dez. 16 ] - Propriedades óticas, estruturais e elétricas de camadas múltiplas de pontos quânticos naturais de InAs crescidos sobre substrato de GaAs
- Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy
- Electrical properties of dx centers in heavily 'SE'-doped 'AL IND.X''GA IND.1-X''AS'
- Growth mode transition observation on temperature dependence of rheed oscillation
- Capacitance measurement of resonant dx centers in heavily 'SE'-doped 'AL IND.X''GA IND.1-X''AS'
- Raman scattering study of 'GA''AS' grown on porous 'SI' by molecular beam epitaxy
- Atomic-scale characterization of interfaces in the 'GA''AS' / 'AL''GA''AS' superlattices
- Kinetic limit of segregation during the molecular beam epitaxy of GaAs/AlAs heterostructures
- Raman study of interface arrangement in 'GA''AS' / 'AL''AS' superlattices grown in different crystal directions
- Spectroscopy of optical phonons in InAs/GaAs self-assembled quantum dots
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