Characterization of gasb and of a gasb / inas heterojunction (1988)
- Authors:
- Autor USP: HENRIQUES, ANDRE BOHOMOLETZ - IF
- Unidade: IF
- Assunto: FÍSICA DA MATÉRIA CONDENSADA
- Language: Português
- Source:
- Título do periódico: Institute of Physics, Conference Series
- Volume/Número/Paginação/Ano: v.91, p.271-6, 1988
-
ABNT
HAYWOOD, S K et al. Characterization of gasb and of a gasb / inas heterojunction. Institute of Physics, Conference Series, v. 91, p. 271-6, 1988Tradução . . Acesso em: 19 set. 2024. -
APA
Haywood, S. K., Henriques, A. B., Howell, D. F., Mason, N. J., & Nicholas, R. J. (1988). Characterization of gasb and of a gasb / inas heterojunction. Institute of Physics, Conference Series, 91, 271-6. -
NLM
Haywood SK, Henriques AB, Howell DF, Mason NJ, Nicholas RJ. Characterization of gasb and of a gasb / inas heterojunction. Institute of Physics, Conference Series. 1988 ;91 271-6.[citado 2024 set. 19 ] -
Vancouver
Haywood SK, Henriques AB, Howell DF, Mason NJ, Nicholas RJ. Characterization of gasb and of a gasb / inas heterojunction. Institute of Physics, Conference Series. 1988 ;91 271-6.[citado 2024 set. 19 ] - Theoretical investigation of the photoluminescence and fermi surface of periodically delta-dopped 'GA''AS'
- Magneto-optical studies of screened excitons in 'GA''AS' / 'AL IND.X' 'GA IND.1-X''AS' modulation doped quantum wells
- Analise espectral de processos magneto-oscilatorios
- Quantum and transport mobilities in 'DELTA'-doped semiconductors
- Magnetic quantum effects in degenerate superlattices
- High magnetic field transport and photoluminescence in doped InGaAs/InP superlattices
- Optical investigation of magnetic phases in epitaxial 'EU''SE'
- Pseudomorphic InxGal -xAs/InO.52Al0.48As modulation doped heterostructures grown by LP-MOVPE
- Carbon delta-doped AlGaAs grown by metalorganic vapor phase epitaxy
- InP/InGaAs doped quantum barrier systems
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