Growth of gasb by movpe (1988)
- Authors:
- Autor USP: HENRIQUES, ANDRE BOHOMOLETZ - IF
- Unidade: IF
- Assunto: FÍSICA EXPERIMENTAL
- Language: Português
- Source:
- Título: Semicond Sci Technol
- Volume/Número/Paginação/Ano: v.3 , n.4 , p.315-20, 1988
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ABNT
HAYWOOD, S K et al. Growth of gasb by movpe. Semicond Sci Technol, v. 3 , n. 4 , p. 315-20, 1988Tradução . . Acesso em: 14 out. 2024. -
APA
Haywood, S. K., Henriques, A. B., Mason, N. J., Nicholas, R. J., & Walker, P. J. (1988). Growth of gasb by movpe. Semicond Sci Technol, 3 ( 4 ), 315-20. -
NLM
Haywood SK, Henriques AB, Mason NJ, Nicholas RJ, Walker PJ. Growth of gasb by movpe. Semicond Sci Technol. 1988 ;3 ( 4 ): 315-20.[citado 2024 out. 14 ] -
Vancouver
Haywood SK, Henriques AB, Mason NJ, Nicholas RJ, Walker PJ. Growth of gasb by movpe. Semicond Sci Technol. 1988 ;3 ( 4 ): 315-20.[citado 2024 out. 14 ] - Theoretical investigation of the photoluminescence and fermi surface of periodically delta-dopped 'GA''AS'
- Magneto-optical studies of screened excitons in 'GA''AS' / 'AL IND.X' 'GA IND.1-X''AS' modulation doped quantum wells
- Analise espectral de processos magneto-oscilatorios
- Quantum and transport mobilities in 'DELTA'-doped semiconductors
- Magnetic quantum effects in degenerate superlattices
- High magnetic field transport and photoluminescence in doped InGaAs/InP superlattices
- Optical investigation of magnetic phases in epitaxial 'EU''SE'
- Pseudomorphic InxGal -xAs/InO.52Al0.48As modulation doped heterostructures grown by LP-MOVPE
- Carbon delta-doped AlGaAs grown by metalorganic vapor phase epitaxy
- InP/InGaAs doped quantum barrier systems
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