Characterization of a ISFET device as a ph sensor for applications in the industrial, environmental and biomedical fields (2007)
- Authors:
- Autor USP: SANTOS FILHO, SEBASTIAO GOMES DOS - EP
- Unidade: EP
- Assunto: MICROELETRÔNICA
- Language: Inglês
- Imprenta:
- Publisher: The Electrochemical Society
- Publisher place: Pennington
- Date published: 2007
- Source:
- Título do periódico: SBMicro 2007
- ISSN: 1938-5862
- Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO
-
ABNT
SCAFF, Robson e FONTES, Marcelo Bariatto Andrade e SANTOS FILHO, Sebastião Gomes dos. Characterization of a ISFET device as a ph sensor for applications in the industrial, environmental and biomedical fields. 2007, Anais.. Pennington: The Electrochemical Society, 2007. . Acesso em: 19 set. 2024. -
APA
Scaff, R., Fontes, M. B. A., & Santos Filho, S. G. dos. (2007). Characterization of a ISFET device as a ph sensor for applications in the industrial, environmental and biomedical fields. In SBMicro 2007. Pennington: The Electrochemical Society. -
NLM
Scaff R, Fontes MBA, Santos Filho SG dos. Characterization of a ISFET device as a ph sensor for applications in the industrial, environmental and biomedical fields. SBMicro 2007. 2007 ;[citado 2024 set. 19 ] -
Vancouver
Scaff R, Fontes MBA, Santos Filho SG dos. Characterization of a ISFET device as a ph sensor for applications in the industrial, environmental and biomedical fields. SBMicro 2007. 2007 ;[citado 2024 set. 19 ] - Formation of nickel silicides onto (100) silicon wafer surfaces using a thin platinum interlayer
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- Simulations of an interference birefringent thin film filter used as a narrow-band polarizer
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- Partial dielectric breakdown in MOS gate oxide grown by RTO
- Electrical simulations of gate-controlled diodes in order to show their feasibility as luminous radiation sensors
- Local anodic oxidation induced by electric fields of MV/cm at AFM silicon nitride tips on silicon surfaces
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