Sample parameters of degenerate semiconductor superlattices (1996)
- Autores:
- Autor USP: HENRIQUES, ANDRE BOHOMOLETZ - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Idioma: Inglês
- Imprenta:
- Fonte:
- Título do periódico: Brazilian Journal of Physics
- Volume/Número/Paginação/Ano: v.26, n.1 , p.327-32, 1996
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ABNT
HENRIQUES, André Bohomoletz et al. Sample parameters of degenerate semiconductor superlattices. Brazilian Journal of Physics, v. 26, n. 1 , p. 327-32, 1996Tradução . . Acesso em: 19 set. 2024. -
APA
Henriques, A. B., Gonçalves, L. C. D., De Souza, P. L., & Yavich, B. (1996). Sample parameters of degenerate semiconductor superlattices. Brazilian Journal of Physics, 26( 1 ), 327-32. -
NLM
Henriques AB, Gonçalves LCD, De Souza PL, Yavich B. Sample parameters of degenerate semiconductor superlattices. Brazilian Journal of Physics. 1996 ;26( 1 ): 327-32.[citado 2024 set. 19 ] -
Vancouver
Henriques AB, Gonçalves LCD, De Souza PL, Yavich B. Sample parameters of degenerate semiconductor superlattices. Brazilian Journal of Physics. 1996 ;26( 1 ): 327-32.[citado 2024 set. 19 ] - Theoretical investigation of the photoluminescence and fermi surface of periodically delta-dopped 'GA''AS'
- Magneto-optical studies of screened excitons in 'GA''AS' / 'AL IND.X' 'GA IND.1-X''AS' modulation doped quantum wells
- Analise espectral de processos magneto-oscilatorios
- Quantum and transport mobilities in 'DELTA'-doped semiconductors
- Magnetic quantum effects in degenerate superlattices
- High magnetic field transport and photoluminescence in doped InGaAs/InP superlattices
- Optical investigation of magnetic phases in epitaxial 'EU''SE'
- Pseudomorphic InxGal -xAs/InO.52Al0.48As modulation doped heterostructures grown by LP-MOVPE
- Carbon delta-doped AlGaAs grown by metalorganic vapor phase epitaxy
- InP/InGaAs doped quantum barrier systems
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